Growth of iridium films by metal organic chemical vapour deposition

Tobias Gerfin, Werner J. Hälg, Fachri Atamny, Klaus Hermann Dahmen

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Thin films of metallic iridium were grown by thermal metal organic chemical vapour deposition in a horizontal hot-wall reactor. The new solid compound Ir(2,2,6,6-tetramethyl-3,5-heptadione)(1,5-cyclooctadiene) was used as the iridium source. Evaporation rate experiments showed a rather poor volatility of this compound compared with Ir(acetylacetone)(1,5-cyclooctadiene). However, high growth rates of 0.25 μ h-1 could be realized at substrate temperatures of 350 °C using a graphite susceptor coated with iridium andisopropanol as a component of the reaction gas. The films were pure metallic, as shown by emission spectroscopy for chemical analysis, and had typical sheet resistances of 50 μω □-1.

Original languageEnglish
Pages (from-to)352-355
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1 Apr 1994


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Gerfin, T., Hälg, W. J., Atamny, F., & Dahmen, K. H. (1994). Growth of iridium films by metal organic chemical vapour deposition. Thin Solid Films, 241(1-2), 352-355.