Growth of Copper Films by Metal Organic Vapor Deposition Using (Pyrazolylborate)copper(I) Compounds

Elisabeth Charlotte Plappert, Thomas Stumm, Herbert Van Den Bergh, Roland Hauert, Klaus Hermann Dahmen

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16 Citations (Scopus)

Abstract

CuCl reacts with Na[HB(R3R5pz)3] and phosphine (PR3) or isonitrile (CNR) to yield volatile (pyrazolylborate)copper(I) complexes. These compounds were evaluated as MOCVD precursors. Using [{HB(pz)3}Cu(PEt3)] and [{HB(pz)3}Cu(PMe3)], thin copper films were grown by thermal metal organic chemical vapor deposition in a low pressure reactor in the temperature range 150-350°C. Polycrystalline Cu-phases were obtained at temperatures as low as 150°C. The metallic films were characterized by four-point-probe resistivity measurements, AES, and XPS, as well as AFM and SEM. Selective deposition on metal-seeded surface sites was observed on Pt, Au, Al, and W versus SiO2. Anti-selective deposition was found to occur on Pd-seeded samples.

Original languageEnglish
Pages (from-to)37-43
Number of pages7
JournalChemical Vapor Deposition
Volume3
Issue number1
Publication statusPublished - 1 Dec 1997
Externally publishedYes

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Keywords

  • Copper
  • MOCVD
  • Precursor
  • Pyrazolyborate

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Plappert, E. C., Stumm, T., Van Den Bergh, H., Hauert, R., & Dahmen, K. H. (1997). Growth of Copper Films by Metal Organic Vapor Deposition Using (Pyrazolylborate)copper(I) Compounds. Chemical Vapor Deposition, 3(1), 37-43.