Growth kinetics of copper thin films in different MOCVD systems

T. Gerfin, M. Becht, K. H. Dahmen

Research output: Chapter in Book/Report/Conference proceedingChapter

8 Citations (Scopus)

Abstract

Thin copper films grown in two different MOCVD systems using bis-(2,2,6,6-tetramethyl-3,5-heptadionato)-copper, [Cu(thd) 2], as precursor. The experiments were carried out in a horizontal hot-wall quartz reactor and a vertical cold-wall apparatus of stainless steel. The thicknesses of the films were measured by profilometry, the absorption coefficients k at a wavelength of 1300nm by ellipsometry and the electrical sheet resistances by four-probe measurements. The growth kinetics, which depends on the partial pressure of the precursor, on the reaction gas type and on the substrate temperature, will be discussed. A mechanism will be given for the MOCVD process in the horizontal system.

Original languageEnglish
Title of host publicationJournal De Physique. IV : JP
EditorsTapio Mantyla
Pages345-352
Number of pages8
Volume3
Edition3
Publication statusPublished - Aug 1993
Externally publishedYes
EventProceedings of the 9th European Conference on Chemical Vapour Deposition - Tampere, Finl
Duration: 22 Aug 199327 Aug 1993

Other

OtherProceedings of the 9th European Conference on Chemical Vapour Deposition
CityTampere, Finl
Period22/8/9327/8/93

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Gerfin, T., Becht, M., & Dahmen, K. H. (1993). Growth kinetics of copper thin films in different MOCVD systems. In T. Mantyla (Ed.), Journal De Physique. IV : JP (3 ed., Vol. 3, pp. 345-352)