Growth kinetics of copper thin films in different MOCVD systems

T. Gerfin, M. Becht, K. H. Dahmen

Research output: Chapter in Book/Report/Conference proceedingChapter

8 Citations (Scopus)

Abstract

Thin copper films grown in two different MOCVD systems using bis-(2,2,6,6-tetramethyl-3,5-heptadionato)-copper, [Cu(thd) 2], as precursor. The experiments were carried out in a horizontal hot-wall quartz reactor and a vertical cold-wall apparatus of stainless steel. The thicknesses of the films were measured by profilometry, the absorption coefficients k at a wavelength of 1300nm by ellipsometry and the electrical sheet resistances by four-probe measurements. The growth kinetics, which depends on the partial pressure of the precursor, on the reaction gas type and on the substrate temperature, will be discussed. A mechanism will be given for the MOCVD process in the horizontal system.

Original languageEnglish
Title of host publicationJournal De Physique. IV : JP
EditorsTapio Mantyla
Pages345-352
Number of pages8
Volume3
Edition3
Publication statusPublished - Aug 1993
Externally publishedYes
EventProceedings of the 9th European Conference on Chemical Vapour Deposition - Tampere, Finl
Duration: 22 Aug 199327 Aug 1993

Other

OtherProceedings of the 9th European Conference on Chemical Vapour Deposition
CityTampere, Finl
Period22/8/9327/8/93

Fingerprint

metalorganic chemical vapor deposition
cold walls
copper
kinetics
thin films
ellipsometry
partial pressure
stainless steels
absorptivity
quartz
reactors
probes
gases
wavelengths
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Gerfin, T., Becht, M., & Dahmen, K. H. (1993). Growth kinetics of copper thin films in different MOCVD systems. In T. Mantyla (Ed.), Journal De Physique. IV : JP (3 ed., Vol. 3, pp. 345-352)

Growth kinetics of copper thin films in different MOCVD systems. / Gerfin, T.; Becht, M.; Dahmen, K. H.

Journal De Physique. IV : JP. ed. / Tapio Mantyla. Vol. 3 3. ed. 1993. p. 345-352.

Research output: Chapter in Book/Report/Conference proceedingChapter

Gerfin, T, Becht, M & Dahmen, KH 1993, Growth kinetics of copper thin films in different MOCVD systems. in T Mantyla (ed.), Journal De Physique. IV : JP. 3 edn, vol. 3, pp. 345-352, Proceedings of the 9th European Conference on Chemical Vapour Deposition, Tampere, Finl, 22/8/93.
Gerfin T, Becht M, Dahmen KH. Growth kinetics of copper thin films in different MOCVD systems. In Mantyla T, editor, Journal De Physique. IV : JP. 3 ed. Vol. 3. 1993. p. 345-352
Gerfin, T. ; Becht, M. ; Dahmen, K. H. / Growth kinetics of copper thin films in different MOCVD systems. Journal De Physique. IV : JP. editor / Tapio Mantyla. Vol. 3 3. ed. 1993. pp. 345-352
@inbook{421b71a5579f49bb8807de05757cbdc4,
title = "Growth kinetics of copper thin films in different MOCVD systems",
abstract = "Thin copper films grown in two different MOCVD systems using bis-(2,2,6,6-tetramethyl-3,5-heptadionato)-copper, [Cu(thd) 2], as precursor. The experiments were carried out in a horizontal hot-wall quartz reactor and a vertical cold-wall apparatus of stainless steel. The thicknesses of the films were measured by profilometry, the absorption coefficients k at a wavelength of 1300nm by ellipsometry and the electrical sheet resistances by four-probe measurements. The growth kinetics, which depends on the partial pressure of the precursor, on the reaction gas type and on the substrate temperature, will be discussed. A mechanism will be given for the MOCVD process in the horizontal system.",
author = "T. Gerfin and M. Becht and Dahmen, {K. H.}",
year = "1993",
month = "8",
language = "English",
volume = "3",
pages = "345--352",
editor = "Tapio Mantyla",
booktitle = "Journal De Physique. IV : JP",
edition = "3",

}

TY - CHAP

T1 - Growth kinetics of copper thin films in different MOCVD systems

AU - Gerfin, T.

AU - Becht, M.

AU - Dahmen, K. H.

PY - 1993/8

Y1 - 1993/8

N2 - Thin copper films grown in two different MOCVD systems using bis-(2,2,6,6-tetramethyl-3,5-heptadionato)-copper, [Cu(thd) 2], as precursor. The experiments were carried out in a horizontal hot-wall quartz reactor and a vertical cold-wall apparatus of stainless steel. The thicknesses of the films were measured by profilometry, the absorption coefficients k at a wavelength of 1300nm by ellipsometry and the electrical sheet resistances by four-probe measurements. The growth kinetics, which depends on the partial pressure of the precursor, on the reaction gas type and on the substrate temperature, will be discussed. A mechanism will be given for the MOCVD process in the horizontal system.

AB - Thin copper films grown in two different MOCVD systems using bis-(2,2,6,6-tetramethyl-3,5-heptadionato)-copper, [Cu(thd) 2], as precursor. The experiments were carried out in a horizontal hot-wall quartz reactor and a vertical cold-wall apparatus of stainless steel. The thicknesses of the films were measured by profilometry, the absorption coefficients k at a wavelength of 1300nm by ellipsometry and the electrical sheet resistances by four-probe measurements. The growth kinetics, which depends on the partial pressure of the precursor, on the reaction gas type and on the substrate temperature, will be discussed. A mechanism will be given for the MOCVD process in the horizontal system.

UR - http://www.scopus.com/inward/record.url?scp=0005852098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0005852098&partnerID=8YFLogxK

M3 - Chapter

VL - 3

SP - 345

EP - 352

BT - Journal De Physique. IV : JP

A2 - Mantyla, Tapio

ER -