Growth control, structure, chemical state, and photoresponse of CuO-CdS core-shell heterostructure nanowires

A. A. El Mel, Marie Buffiere, N. Bouts, E. Gautron, P. Y. Tessier, K. Henzler, P. Guttmann, S. Konstantinidis, C. Bittencourt, R. Snyders

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The growth of single-crystal CuO nanowires by thermal annealing of copper thin films in air is studied. We show that the density, length, and diameter of the nanowires can be controlled by tuning the morphology and structure of the copper thin films deposited by DC magnetron sputtering. After identifying the optimal conditions for the growth of CuO nanowires, chemical bath deposition is employed to coat the CuO nanowires with CdS in order to form p-n nanojunction arrays. As revealed by high-resolution TEM analysis, the thickness of the polycrystalline CdS shell increases when decreasing the diameter of the CuO core for a given time of CdS deposition. Near-edge x-ray absorption fine-structure spectroscopy combined with transmission x-ray microscopy allows the chemical analysis of isolated nanowires. The absence of modification in the spectra at the Cu L and O K edges after the deposition of CdS on the CuO nanowires indicates that neither Cd nor S diffuse into the CuO phase. We further demonstrate that the core-shell nanowires exhibit the I-V characteristic of a resistor instead of a diode. The electrical behavior of the device was found to be photosensitive, since increasing the incident light intensity induces an increase in the collected electrical current.

Original languageEnglish
Article number265603
JournalNanotechnology
Volume24
Issue number26
DOIs
Publication statusPublished - 5 Jul 2013
Externally publishedYes

Fingerprint

Nanowires
Heterojunctions
Growth
Copper
X-Rays
X rays
Thin films
Wave transmission
Crystallization
Baths
Resistors
Magnetron sputtering
Microscopy
Spectrum Analysis
Microscopic examination
Diodes
Tuning
Hot Temperature
Air
Single crystals

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Growth control, structure, chemical state, and photoresponse of CuO-CdS core-shell heterostructure nanowires. / El Mel, A. A.; Buffiere, Marie; Bouts, N.; Gautron, E.; Tessier, P. Y.; Henzler, K.; Guttmann, P.; Konstantinidis, S.; Bittencourt, C.; Snyders, R.

In: Nanotechnology, Vol. 24, No. 26, 265603, 05.07.2013.

Research output: Contribution to journalArticle

El Mel, AA, Buffiere, M, Bouts, N, Gautron, E, Tessier, PY, Henzler, K, Guttmann, P, Konstantinidis, S, Bittencourt, C & Snyders, R 2013, 'Growth control, structure, chemical state, and photoresponse of CuO-CdS core-shell heterostructure nanowires', Nanotechnology, vol. 24, no. 26, 265603. https://doi.org/10.1088/0957-4484/24/26/265603
El Mel, A. A. ; Buffiere, Marie ; Bouts, N. ; Gautron, E. ; Tessier, P. Y. ; Henzler, K. ; Guttmann, P. ; Konstantinidis, S. ; Bittencourt, C. ; Snyders, R. / Growth control, structure, chemical state, and photoresponse of CuO-CdS core-shell heterostructure nanowires. In: Nanotechnology. 2013 ; Vol. 24, No. 26.
@article{35c06f509f324249ad87fe553562ab96,
title = "Growth control, structure, chemical state, and photoresponse of CuO-CdS core-shell heterostructure nanowires",
abstract = "The growth of single-crystal CuO nanowires by thermal annealing of copper thin films in air is studied. We show that the density, length, and diameter of the nanowires can be controlled by tuning the morphology and structure of the copper thin films deposited by DC magnetron sputtering. After identifying the optimal conditions for the growth of CuO nanowires, chemical bath deposition is employed to coat the CuO nanowires with CdS in order to form p-n nanojunction arrays. As revealed by high-resolution TEM analysis, the thickness of the polycrystalline CdS shell increases when decreasing the diameter of the CuO core for a given time of CdS deposition. Near-edge x-ray absorption fine-structure spectroscopy combined with transmission x-ray microscopy allows the chemical analysis of isolated nanowires. The absence of modification in the spectra at the Cu L and O K edges after the deposition of CdS on the CuO nanowires indicates that neither Cd nor S diffuse into the CuO phase. We further demonstrate that the core-shell nanowires exhibit the I-V characteristic of a resistor instead of a diode. The electrical behavior of the device was found to be photosensitive, since increasing the incident light intensity induces an increase in the collected electrical current.",
author = "{El Mel}, {A. A.} and Marie Buffiere and N. Bouts and E. Gautron and Tessier, {P. Y.} and K. Henzler and P. Guttmann and S. Konstantinidis and C. Bittencourt and R. Snyders",
year = "2013",
month = "7",
day = "5",
doi = "10.1088/0957-4484/24/26/265603",
language = "English",
volume = "24",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "26",

}

TY - JOUR

T1 - Growth control, structure, chemical state, and photoresponse of CuO-CdS core-shell heterostructure nanowires

AU - El Mel, A. A.

AU - Buffiere, Marie

AU - Bouts, N.

AU - Gautron, E.

AU - Tessier, P. Y.

AU - Henzler, K.

AU - Guttmann, P.

AU - Konstantinidis, S.

AU - Bittencourt, C.

AU - Snyders, R.

PY - 2013/7/5

Y1 - 2013/7/5

N2 - The growth of single-crystal CuO nanowires by thermal annealing of copper thin films in air is studied. We show that the density, length, and diameter of the nanowires can be controlled by tuning the morphology and structure of the copper thin films deposited by DC magnetron sputtering. After identifying the optimal conditions for the growth of CuO nanowires, chemical bath deposition is employed to coat the CuO nanowires with CdS in order to form p-n nanojunction arrays. As revealed by high-resolution TEM analysis, the thickness of the polycrystalline CdS shell increases when decreasing the diameter of the CuO core for a given time of CdS deposition. Near-edge x-ray absorption fine-structure spectroscopy combined with transmission x-ray microscopy allows the chemical analysis of isolated nanowires. The absence of modification in the spectra at the Cu L and O K edges after the deposition of CdS on the CuO nanowires indicates that neither Cd nor S diffuse into the CuO phase. We further demonstrate that the core-shell nanowires exhibit the I-V characteristic of a resistor instead of a diode. The electrical behavior of the device was found to be photosensitive, since increasing the incident light intensity induces an increase in the collected electrical current.

AB - The growth of single-crystal CuO nanowires by thermal annealing of copper thin films in air is studied. We show that the density, length, and diameter of the nanowires can be controlled by tuning the morphology and structure of the copper thin films deposited by DC magnetron sputtering. After identifying the optimal conditions for the growth of CuO nanowires, chemical bath deposition is employed to coat the CuO nanowires with CdS in order to form p-n nanojunction arrays. As revealed by high-resolution TEM analysis, the thickness of the polycrystalline CdS shell increases when decreasing the diameter of the CuO core for a given time of CdS deposition. Near-edge x-ray absorption fine-structure spectroscopy combined with transmission x-ray microscopy allows the chemical analysis of isolated nanowires. The absence of modification in the spectra at the Cu L and O K edges after the deposition of CdS on the CuO nanowires indicates that neither Cd nor S diffuse into the CuO phase. We further demonstrate that the core-shell nanowires exhibit the I-V characteristic of a resistor instead of a diode. The electrical behavior of the device was found to be photosensitive, since increasing the incident light intensity induces an increase in the collected electrical current.

UR - http://www.scopus.com/inward/record.url?scp=84878744373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878744373&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/24/26/265603

DO - 10.1088/0957-4484/24/26/265603

M3 - Article

C2 - 23732175

AN - SCOPUS:84878744373

VL - 24

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 26

M1 - 265603

ER -