Growth and structure of epitaxial Ce1-xZrxO2 thin films on yttria-stabilized zirconia (111)

Y. J. Kim, S. Thevuthasan, V. Shutthananadan, C. L. Perkins, D. E. McCready, G. S. Herman, Y. Gao, T. T. Tran, S. A. Chambers, C. H F Peden

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We describe here studies aimed at the identification of optimum parameters for the epitaxial growth of the mixed-oxide films, Ce1-xZrxO2 with x=0.1, 0.2 and 0.3, by oxygen-plasma-assisted MBE on single crystal Y-stabilized ZrO2 (YSZ) substrates. The resulting films were characterized by RHEED, LEED, XPS/XPD, XRD, and RBS/C in order to determine their bulk and surface structures and compositions. Pure-phase, epitaxial Ce1-xZrxO2 films readily grew on YSZ(111) without showing any contamination of yttria from the substrate. The resulting epitaxial film surfaces are unreconstructed and exhibit the structure of bulk CeO2(111). XPS data indicate that both Ce and Zr cations are formally in the +4 oxidation state for all films prepared here. Small differences in the photoemission results for Zr-doped ceria films as compared to those obtained for pure ZrO2 may be explained by changes in electronic structure when Zr is added to ceria that, in turn, results from longer Zr-O bond distances in the mixed oxides. The minimum yields obtained from the random and channeling spectra of these films also provide evidence that high quality single crystal CeO2 and Ce0.7Zr0.3O2 materials were grown. For the Zr-doped films, Zr atoms are shown to occupy the lattice sites of Ce in the bulk structure of CeO2(111). Indeed, based on minimum yield values, the fraction of Zr substitution for Ce cations in the film was estimated to be 88%.

Original languageEnglish
Pages (from-to)177-190
Number of pages14
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume126
Issue number1-3
DOIs
Publication statusPublished - Oct 2002
Externally publishedYes

Fingerprint

Yttria stabilized zirconia
yttria-stabilized zirconia
Thin films
thin films
Cerium compounds
Surface structure
mixed oxides
Cations
X ray photoelectron spectroscopy
Positive ions
Single crystals
Reflection high energy electron diffraction
Yttrium oxide
cations
Epitaxial films
Photoemission
Substrates
Epitaxial growth
single crystals
Molecular beam epitaxy

Keywords

  • Ceria
  • Ceria-zirconia
  • Ion channeling
  • Oxygen storage
  • Thin films
  • X-ray photoelectron diffraction
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

Cite this

Kim, Y. J., Thevuthasan, S., Shutthananadan, V., Perkins, C. L., McCready, D. E., Herman, G. S., ... Peden, C. H. F. (2002). Growth and structure of epitaxial Ce1-xZrxO2 thin films on yttria-stabilized zirconia (111). Journal of Electron Spectroscopy and Related Phenomena, 126(1-3), 177-190. https://doi.org/10.1016/S0368-2048(02)00151-2

Growth and structure of epitaxial Ce1-xZrxO2 thin films on yttria-stabilized zirconia (111). / Kim, Y. J.; Thevuthasan, S.; Shutthananadan, V.; Perkins, C. L.; McCready, D. E.; Herman, G. S.; Gao, Y.; Tran, T. T.; Chambers, S. A.; Peden, C. H F.

In: Journal of Electron Spectroscopy and Related Phenomena, Vol. 126, No. 1-3, 10.2002, p. 177-190.

Research output: Contribution to journalArticle

Kim, YJ, Thevuthasan, S, Shutthananadan, V, Perkins, CL, McCready, DE, Herman, GS, Gao, Y, Tran, TT, Chambers, SA & Peden, CHF 2002, 'Growth and structure of epitaxial Ce1-xZrxO2 thin films on yttria-stabilized zirconia (111)', Journal of Electron Spectroscopy and Related Phenomena, vol. 126, no. 1-3, pp. 177-190. https://doi.org/10.1016/S0368-2048(02)00151-2
Kim, Y. J. ; Thevuthasan, S. ; Shutthananadan, V. ; Perkins, C. L. ; McCready, D. E. ; Herman, G. S. ; Gao, Y. ; Tran, T. T. ; Chambers, S. A. ; Peden, C. H F. / Growth and structure of epitaxial Ce1-xZrxO2 thin films on yttria-stabilized zirconia (111). In: Journal of Electron Spectroscopy and Related Phenomena. 2002 ; Vol. 126, No. 1-3. pp. 177-190.
@article{07fa2401e2c04b2eb1705343ac481150,
title = "Growth and structure of epitaxial Ce1-xZrxO2 thin films on yttria-stabilized zirconia (111)",
abstract = "We describe here studies aimed at the identification of optimum parameters for the epitaxial growth of the mixed-oxide films, Ce1-xZrxO2 with x=0.1, 0.2 and 0.3, by oxygen-plasma-assisted MBE on single crystal Y-stabilized ZrO2 (YSZ) substrates. The resulting films were characterized by RHEED, LEED, XPS/XPD, XRD, and RBS/C in order to determine their bulk and surface structures and compositions. Pure-phase, epitaxial Ce1-xZrxO2 films readily grew on YSZ(111) without showing any contamination of yttria from the substrate. The resulting epitaxial film surfaces are unreconstructed and exhibit the structure of bulk CeO2(111). XPS data indicate that both Ce and Zr cations are formally in the +4 oxidation state for all films prepared here. Small differences in the photoemission results for Zr-doped ceria films as compared to those obtained for pure ZrO2 may be explained by changes in electronic structure when Zr is added to ceria that, in turn, results from longer Zr-O bond distances in the mixed oxides. The minimum yields obtained from the random and channeling spectra of these films also provide evidence that high quality single crystal CeO2 and Ce0.7Zr0.3O2 materials were grown. For the Zr-doped films, Zr atoms are shown to occupy the lattice sites of Ce in the bulk structure of CeO2(111). Indeed, based on minimum yield values, the fraction of Zr substitution for Ce cations in the film was estimated to be 88{\%}.",
keywords = "Ceria, Ceria-zirconia, Ion channeling, Oxygen storage, Thin films, X-ray photoelectron diffraction, X-ray photoelectron spectroscopy",
author = "Kim, {Y. J.} and S. Thevuthasan and V. Shutthananadan and Perkins, {C. L.} and McCready, {D. E.} and Herman, {G. S.} and Y. Gao and Tran, {T. T.} and Chambers, {S. A.} and Peden, {C. H F}",
year = "2002",
month = "10",
doi = "10.1016/S0368-2048(02)00151-2",
language = "English",
volume = "126",
pages = "177--190",
journal = "Journal of Electron Spectroscopy and Related Phenomena",
issn = "0368-2048",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Growth and structure of epitaxial Ce1-xZrxO2 thin films on yttria-stabilized zirconia (111)

AU - Kim, Y. J.

AU - Thevuthasan, S.

AU - Shutthananadan, V.

AU - Perkins, C. L.

AU - McCready, D. E.

AU - Herman, G. S.

AU - Gao, Y.

AU - Tran, T. T.

AU - Chambers, S. A.

AU - Peden, C. H F

PY - 2002/10

Y1 - 2002/10

N2 - We describe here studies aimed at the identification of optimum parameters for the epitaxial growth of the mixed-oxide films, Ce1-xZrxO2 with x=0.1, 0.2 and 0.3, by oxygen-plasma-assisted MBE on single crystal Y-stabilized ZrO2 (YSZ) substrates. The resulting films were characterized by RHEED, LEED, XPS/XPD, XRD, and RBS/C in order to determine their bulk and surface structures and compositions. Pure-phase, epitaxial Ce1-xZrxO2 films readily grew on YSZ(111) without showing any contamination of yttria from the substrate. The resulting epitaxial film surfaces are unreconstructed and exhibit the structure of bulk CeO2(111). XPS data indicate that both Ce and Zr cations are formally in the +4 oxidation state for all films prepared here. Small differences in the photoemission results for Zr-doped ceria films as compared to those obtained for pure ZrO2 may be explained by changes in electronic structure when Zr is added to ceria that, in turn, results from longer Zr-O bond distances in the mixed oxides. The minimum yields obtained from the random and channeling spectra of these films also provide evidence that high quality single crystal CeO2 and Ce0.7Zr0.3O2 materials were grown. For the Zr-doped films, Zr atoms are shown to occupy the lattice sites of Ce in the bulk structure of CeO2(111). Indeed, based on minimum yield values, the fraction of Zr substitution for Ce cations in the film was estimated to be 88%.

AB - We describe here studies aimed at the identification of optimum parameters for the epitaxial growth of the mixed-oxide films, Ce1-xZrxO2 with x=0.1, 0.2 and 0.3, by oxygen-plasma-assisted MBE on single crystal Y-stabilized ZrO2 (YSZ) substrates. The resulting films were characterized by RHEED, LEED, XPS/XPD, XRD, and RBS/C in order to determine their bulk and surface structures and compositions. Pure-phase, epitaxial Ce1-xZrxO2 films readily grew on YSZ(111) without showing any contamination of yttria from the substrate. The resulting epitaxial film surfaces are unreconstructed and exhibit the structure of bulk CeO2(111). XPS data indicate that both Ce and Zr cations are formally in the +4 oxidation state for all films prepared here. Small differences in the photoemission results for Zr-doped ceria films as compared to those obtained for pure ZrO2 may be explained by changes in electronic structure when Zr is added to ceria that, in turn, results from longer Zr-O bond distances in the mixed oxides. The minimum yields obtained from the random and channeling spectra of these films also provide evidence that high quality single crystal CeO2 and Ce0.7Zr0.3O2 materials were grown. For the Zr-doped films, Zr atoms are shown to occupy the lattice sites of Ce in the bulk structure of CeO2(111). Indeed, based on minimum yield values, the fraction of Zr substitution for Ce cations in the film was estimated to be 88%.

KW - Ceria

KW - Ceria-zirconia

KW - Ion channeling

KW - Oxygen storage

KW - Thin films

KW - X-ray photoelectron diffraction

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0036815157&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036815157&partnerID=8YFLogxK

U2 - 10.1016/S0368-2048(02)00151-2

DO - 10.1016/S0368-2048(02)00151-2

M3 - Article

AN - SCOPUS:0036815157

VL - 126

SP - 177

EP - 190

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

SN - 0368-2048

IS - 1-3

ER -