Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy

Z. Q. Yu, Satyanarayana V.N.T. Kuchibhatla, M. H. Engelhard, V. Shutthanandan, C. M. Wang, P. Nachimuthu, O. A. Marina, L. V. Saraf, S. Thevuthasan, S. Seal

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    20 Citations (Scopus)


    We used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented Ce0.8Sm0.2O1.9 films on single-crystal c-Al2O3. Films were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The film/substrate epitaxial relationship can be written as CeO2(1 1 1)//α-Al2O3(0 0 0 1) and CeO2[1 1 0]//α-Al2O3[over(2, -) 1 1 0] . Ce and Sm were found to be in their highest oxidation state, +4 and +3, respectively. The doped cubic CeO2 films have a preferred (1 1 1) orientation. Significant conductivity difference was observed between single and polycrystalline films. A good orientation existing in the single-crystalline thin films may help long-range oxygen vacancy transport, ultimately contributing to significantly higher conductivities, in comparison to polycrystalline films.

    Original languageEnglish
    Pages (from-to)2450-2456
    Number of pages7
    JournalJournal of Crystal Growth
    Issue number10
    Publication statusPublished - 1 May 2008



    • A1. Doping
    • A1. HRTEM
    • A1. XPS
    • A1. XRD
    • A3. Thin films
    • B1. CeO
    • B1. Sapphire

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

    Cite this

    Yu, Z. Q., Kuchibhatla, S. V. N. T., Engelhard, M. H., Shutthanandan, V., Wang, C. M., Nachimuthu, P., Marina, O. A., Saraf, L. V., Thevuthasan, S., & Seal, S. (2008). Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 310(10), 2450-2456.