Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy

Z. Q. Yu, Satyanarayana V N T Kuchibhatla, M. H. Engelhard, V. Shutthanandan, C. M. Wang, P. Nachimuthu, O. A. Marina, L. V. Saraf, S. Thevuthasan, S. Seal

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented Ce0.8Sm0.2O1.9 films on single-crystal c-Al2O3. Films were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The film/substrate epitaxial relationship can be written as CeO2(1 1 1)//α-Al2O3(0 0 0 1) and CeO2[1 1 0]//α-Al2O3[over(2, -) 1 1 0] . Ce and Sm were found to be in their highest oxidation state, +4 and +3, respectively. The doped cubic CeO2 films have a preferred (1 1 1) orientation. Significant conductivity difference was observed between single and polycrystalline films. A good orientation existing in the single-crystalline thin films may help long-range oxygen vacancy transport, ultimately contributing to significantly higher conductivities, in comparison to polycrystalline films.

Original languageEnglish
Pages (from-to)2450-2456
Number of pages7
JournalJournal of Crystal Growth
Volume310
Issue number10
DOIs
Publication statusPublished - 1 May 2008
Externally publishedYes

Fingerprint

oxygen plasma
Molecular beam epitaxy
molecular beam epitaxy
Oxygen
Plasmas
conductivity
Reflection high energy electron diffraction
Rutherford backscattering spectroscopy
Oxygen vacancies
Crystal orientation
high energy electrons
Spectrometry
Atomic force microscopy
backscattering
x rays
X ray photoelectron spectroscopy
electron diffraction
photoelectron spectroscopy
Single crystals
atomic force microscopy

Keywords

  • A1. Doping
  • A1. HRTEM
  • A1. XPS
  • A1. XRD
  • A3. Thin films
  • B1. CeO
  • B1. Sapphire

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Yu, Z. Q., Kuchibhatla, S. V. N. T., Engelhard, M. H., Shutthanandan, V., Wang, C. M., Nachimuthu, P., ... Seal, S. (2008). Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 310(10), 2450-2456. https://doi.org/10.1016/j.jcrysgro.2007.12.028

Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy. / Yu, Z. Q.; Kuchibhatla, Satyanarayana V N T; Engelhard, M. H.; Shutthanandan, V.; Wang, C. M.; Nachimuthu, P.; Marina, O. A.; Saraf, L. V.; Thevuthasan, S.; Seal, S.

In: Journal of Crystal Growth, Vol. 310, No. 10, 01.05.2008, p. 2450-2456.

Research output: Contribution to journalArticle

Yu, ZQ, Kuchibhatla, SVNT, Engelhard, MH, Shutthanandan, V, Wang, CM, Nachimuthu, P, Marina, OA, Saraf, LV, Thevuthasan, S & Seal, S 2008, 'Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy', Journal of Crystal Growth, vol. 310, no. 10, pp. 2450-2456. https://doi.org/10.1016/j.jcrysgro.2007.12.028
Yu ZQ, Kuchibhatla SVNT, Engelhard MH, Shutthanandan V, Wang CM, Nachimuthu P et al. Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy. Journal of Crystal Growth. 2008 May 1;310(10):2450-2456. https://doi.org/10.1016/j.jcrysgro.2007.12.028
Yu, Z. Q. ; Kuchibhatla, Satyanarayana V N T ; Engelhard, M. H. ; Shutthanandan, V. ; Wang, C. M. ; Nachimuthu, P. ; Marina, O. A. ; Saraf, L. V. ; Thevuthasan, S. ; Seal, S. / Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 10. pp. 2450-2456.
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AU - Shutthanandan, V.

AU - Wang, C. M.

AU - Nachimuthu, P.

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