Growth and structure of epitaxial CeO2 by oxygen-plasma-assisted molecular beam epitaxy

Y. J. Kim, Y. Gao, G. S. Herman, S. Thevuthasan, W. Jiang, D. E. McCready, S. A. Chambers

Research output: Contribution to journalArticle

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Abstract

The epitaxial growth of CeO2 films on SrTiO3(001) has been investigated over a wide range of growth parameters using oxygen-plasma-assisted molecular beam epitaxy. The lattice mismatch for CeO2 on SrTiO3(001) is 2.0% (compressive) if the film nucleates with a 45° rotation about [001] relative to the substrate (i.e., CeO2(001)∥SrTiO3(001) and CeO2[110]∥SrTiO3[100]). Pure-phase, single-crystalline epitaxial films of CeO2(001) with the above epitaxial relationship readily grew on SrTiO3(001) for substrate temperatures ranging from 550 to 700°C. However, small amounts of (111) and (220) minority orientations also nucleated at the higher substrate temperatures. In addition, the film surface was observed to become progressively smoother with increasing substrate temperature due to more extensive island agglomeration. The highest-quality film surface grown at 700°C is unreconstructed and oxygen terminated.

Original languageEnglish
Pages (from-to)926-935
Number of pages10
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number3
Publication statusPublished - May 1999
Externally publishedYes

Fingerprint

oxygen plasma
Molecular beam epitaxy
molecular beam epitaxy
Oxygen
Plasmas
Substrates
Lattice mismatch
Epitaxial films
Epitaxial growth
Temperature
minorities
agglomeration
Agglomeration
temperature
Crystalline materials
strontium titanium oxide
oxygen

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Kim, Y. J., Gao, Y., Herman, G. S., Thevuthasan, S., Jiang, W., McCready, D. E., & Chambers, S. A. (1999). Growth and structure of epitaxial CeO2 by oxygen-plasma-assisted molecular beam epitaxy. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 17(3), 926-935.

Growth and structure of epitaxial CeO2 by oxygen-plasma-assisted molecular beam epitaxy. / Kim, Y. J.; Gao, Y.; Herman, G. S.; Thevuthasan, S.; Jiang, W.; McCready, D. E.; Chambers, S. A.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 3, 05.1999, p. 926-935.

Research output: Contribution to journalArticle

Kim, YJ, Gao, Y, Herman, GS, Thevuthasan, S, Jiang, W, McCready, DE & Chambers, SA 1999, 'Growth and structure of epitaxial CeO2 by oxygen-plasma-assisted molecular beam epitaxy', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 17, no. 3, pp. 926-935.
Kim, Y. J. ; Gao, Y. ; Herman, G. S. ; Thevuthasan, S. ; Jiang, W. ; McCready, D. E. ; Chambers, S. A. / Growth and structure of epitaxial CeO2 by oxygen-plasma-assisted molecular beam epitaxy. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1999 ; Vol. 17, No. 3. pp. 926-935.
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