Growth and characterization of highly oriented gadolinia-doped ceria (111) thin films on zirconia (111)/sapphire (0001) substrates

Debasis Bera, Satyanarayana V N T Kuchibhatla, S. Azad, L. Saraf, C. M. Wang, V. Shutthanandan, P. Nachimuthu, D. E. McCready, M. H. Engelhard, O. A. Marina, D. R. Baer, S. Seal, S. Thevuthasan

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Highly-oriented pure and gadolinia-doped ceria thin films have been grown on pure and zirconia (ZrO2) (111)-buffered sapphire (Al2O3) (0001) substrates using oxygen plasma-assisted molecular beam epitaxy to understand the oxygen ionic transport processes in ceria based oxide thin films. Gadolinia-doped ceria films grown on sapphire substrate show polycrystalline features due to structural deformations resulting from the large lattice mismatch between the Al2O3 (0001) substrate and the ceria films. In contrast, the films, grown on a thin layer of ZrO2 (111) buffered sapphire substrate, appear to be highly oriented in nature with predominant double domain (111) orientation. Oxygen ionic conductivity of these gadolinia-doped ceria films was measured as a function of gadolinium concentration and found to be efficient at relatively lower temperature operation compared to that of bulk polycrystalline, single crystalline yttria stabilized zirconia and gadolinia-doped polycrystalline ceria. Relative improvement in ionic conductivity of highly oriented gadolinia-doped ceria films (in the lower temperature regime) can be ascribed to the increased oxygen vacancies due to presence of Gd as well as high quality of the oriented thin films.

Original languageEnglish
Pages (from-to)6088-6094
Number of pages7
JournalThin Solid Films
Volume516
Issue number18
DOIs
Publication statusPublished - 31 Jul 2008
Externally publishedYes

Fingerprint

Aluminum Oxide
Gadolinium
Cerium compounds
gadolinium
zirconium oxides
Sapphire
Zirconia
sapphire
Thin films
Substrates
thin films
ion currents
Ionic conductivity
Oxygen
oxygen
Low temperature operations
oxygen plasma
Lattice mismatch
yttria-stabilized zirconia
Yttria stabilized zirconia

Keywords

  • Highly oriented gadolinia-doped ceria
  • Ionic conductivity
  • Solid oxide fuel cell
  • Transmission electron microscopy
  • X-ray diffraction pole-figure analysis

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Bera, D., Kuchibhatla, S. V. N. T., Azad, S., Saraf, L., Wang, C. M., Shutthanandan, V., ... Thevuthasan, S. (2008). Growth and characterization of highly oriented gadolinia-doped ceria (111) thin films on zirconia (111)/sapphire (0001) substrates. Thin Solid Films, 516(18), 6088-6094. https://doi.org/10.1016/j.tsf.2007.11.007

Growth and characterization of highly oriented gadolinia-doped ceria (111) thin films on zirconia (111)/sapphire (0001) substrates. / Bera, Debasis; Kuchibhatla, Satyanarayana V N T; Azad, S.; Saraf, L.; Wang, C. M.; Shutthanandan, V.; Nachimuthu, P.; McCready, D. E.; Engelhard, M. H.; Marina, O. A.; Baer, D. R.; Seal, S.; Thevuthasan, S.

In: Thin Solid Films, Vol. 516, No. 18, 31.07.2008, p. 6088-6094.

Research output: Contribution to journalArticle

Bera, D, Kuchibhatla, SVNT, Azad, S, Saraf, L, Wang, CM, Shutthanandan, V, Nachimuthu, P, McCready, DE, Engelhard, MH, Marina, OA, Baer, DR, Seal, S & Thevuthasan, S 2008, 'Growth and characterization of highly oriented gadolinia-doped ceria (111) thin films on zirconia (111)/sapphire (0001) substrates', Thin Solid Films, vol. 516, no. 18, pp. 6088-6094. https://doi.org/10.1016/j.tsf.2007.11.007
Bera, Debasis ; Kuchibhatla, Satyanarayana V N T ; Azad, S. ; Saraf, L. ; Wang, C. M. ; Shutthanandan, V. ; Nachimuthu, P. ; McCready, D. E. ; Engelhard, M. H. ; Marina, O. A. ; Baer, D. R. ; Seal, S. ; Thevuthasan, S. / Growth and characterization of highly oriented gadolinia-doped ceria (111) thin films on zirconia (111)/sapphire (0001) substrates. In: Thin Solid Films. 2008 ; Vol. 516, No. 18. pp. 6088-6094.
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