Abstract
The transport properties of metalorganic chemical vapor deposited films of lanthanum manganite grown on various substrates are investigated. The more disordered films show a magnetoresistance that is both large and relatively temperature independent over a wide temperature range. At low magnetic fields, a linear field dependence is observed and is attributed to spin-polarized intergrain tunneling. In addition, at low fields a hysteretic dependence of resistivity on the magnetic field has been observed. This effect has been attributed to the scattering of spin-polarized carriers at the grain boundary.
| Original language | English |
|---|---|
| Pages (from-to) | 7055-7057 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 83 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1 Jan 1998 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Heremans, J. J., Watts, S., Wirth, S., Yu, X., Gillman, E. S., Dahmen, K. H., & Von Molnár, S. (1998). Grain boundary effects on transport in metalorganic chemical vapor deposition-grown, Ca-doped lanthanum manganites. Journal of Applied Physics, 83(11), 7055-7057. https://doi.org/10.1063/1.367548