Formation of zinc oxide films using submicron zinc particle dispersions

Meena S. Rajachidambaram, Tamas Varga, Libor Kovarik, Rahul Sanghavi, Vaithiyalingam Shutthanandan, Suntharampillai Thevuthasan, Seung Yeol Han, Chih Hung Chang, Gregory S. Herman

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Abstract

The thermal oxidation of submicron metallic Zn particles was studied as a method to form nanostructured ZnO films. The particles used for this work were characterized by electron microscopy, x ray diffraction, and thermal analysis to evaluate the Zn-ZnO core shell structure, surface morphology, and oxidation characteristics. Significant nanostructural changes were observed for films annealed to 400 °C or higher, where nanoflakes, nanoribbons, nanoneedles, and nanorods were formed as a result of stress induced fractures arising in the ZnO outer shell due to differential thermal expansion between the metallic Zn core and the ZnO shell. Mass transport occurs through these defects due to the high vapor pressure for metallic Zn at temperatures above 230 °C, whereupon the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. The Zn particles were also incorporated into zinc indium oxide precursor solutions to form thin film transistor test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing.

Original languageEnglish
Article number041805
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume30
Issue number4
DOIs
Publication statusPublished - 2012
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Rajachidambaram, M. S., Varga, T., Kovarik, L., Sanghavi, R., Shutthanandan, V., Thevuthasan, S., Han, S. Y., Chang, C. H., & Herman, G. S. (2012). Formation of zinc oxide films using submicron zinc particle dispersions. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 30(4), [041805]. https://doi.org/10.1116/1.4731255