Formation of textured WS2 thin films by van der Waals rheotaxy process and their photoactivity

P. S. Patil, E. A. Ennaoui, S. Fiechter, H. Tributsch, S. B. Sadale

Research output: Contribution to journalArticle

Abstract

Photoactive thin films of tungsten disulphide (WS2) have been prepared by sulphurization of tungsten trioxide (WO3) thin films. WO3 films have been deposited in an inert atmosphere onto the pre-deposited Ni coated quartz substrates by using an ultrasonic spray pyrolysis technique (USP). Subsequently, the WO3 films have been treated at 700°C in a sealed quartz ampoule filled with elemental sulphur and 0.2 bar N2/H2 forming gas for about 6 hr. The films have been investigated by using X-ray diffractometer (XRD), scanning electron microscopy (SEM), and optical absorption techniques. The photoactivity has been measured using time-resolved microwave conductivity (TRMC) technique. For comparison, the results of WS2 films grown on quartz substrates without pre-deposited nickel layer have been given.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalIndian Journal of Pure and Applied Physics
Volume41
Issue number5
Publication statusPublished - May 2003
Externally publishedYes

Fingerprint

quartz
thin films
tungsten
ampoules
inert atmosphere
disulfides
diffractometers
pyrolysis
sprayers
optical absorption
sulfur
ultrasonics
nickel
microwaves
conductivity
scanning electron microscopy
gases
x rays

Keywords

  • Dichalcogenides
  • Photovoltaics
  • Solar cell
  • Tungsten disulphide
  • Van der Waals epitaxy
  • WS thin films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Formation of textured WS2 thin films by van der Waals rheotaxy process and their photoactivity. / Patil, P. S.; Ennaoui, E. A.; Fiechter, S.; Tributsch, H.; Sadale, S. B.

In: Indian Journal of Pure and Applied Physics, Vol. 41, No. 5, 05.2003, p. 369-373.

Research output: Contribution to journalArticle

Patil, P. S. ; Ennaoui, E. A. ; Fiechter, S. ; Tributsch, H. ; Sadale, S. B. / Formation of textured WS2 thin films by van der Waals rheotaxy process and their photoactivity. In: Indian Journal of Pure and Applied Physics. 2003 ; Vol. 41, No. 5. pp. 369-373.
@article{e7ccc94f73c742b780b785550d31671f,
title = "Formation of textured WS2 thin films by van der Waals rheotaxy process and their photoactivity",
abstract = "Photoactive thin films of tungsten disulphide (WS2) have been prepared by sulphurization of tungsten trioxide (WO3) thin films. WO3 films have been deposited in an inert atmosphere onto the pre-deposited Ni coated quartz substrates by using an ultrasonic spray pyrolysis technique (USP). Subsequently, the WO3 films have been treated at 700°C in a sealed quartz ampoule filled with elemental sulphur and 0.2 bar N2/H2 forming gas for about 6 hr. The films have been investigated by using X-ray diffractometer (XRD), scanning electron microscopy (SEM), and optical absorption techniques. The photoactivity has been measured using time-resolved microwave conductivity (TRMC) technique. For comparison, the results of WS2 films grown on quartz substrates without pre-deposited nickel layer have been given.",
keywords = "Dichalcogenides, Photovoltaics, Solar cell, Tungsten disulphide, Van der Waals epitaxy, WS thin films",
author = "Patil, {P. S.} and Ennaoui, {E. A.} and S. Fiechter and H. Tributsch and Sadale, {S. B.}",
year = "2003",
month = "5",
language = "English",
volume = "41",
pages = "369--373",
journal = "Indian Journal of Pure and Applied Physics",
issn = "0019-5596",
publisher = "National Institute of Science Communication and Information Resources (NISCAIR)",
number = "5",

}

TY - JOUR

T1 - Formation of textured WS2 thin films by van der Waals rheotaxy process and their photoactivity

AU - Patil, P. S.

AU - Ennaoui, E. A.

AU - Fiechter, S.

AU - Tributsch, H.

AU - Sadale, S. B.

PY - 2003/5

Y1 - 2003/5

N2 - Photoactive thin films of tungsten disulphide (WS2) have been prepared by sulphurization of tungsten trioxide (WO3) thin films. WO3 films have been deposited in an inert atmosphere onto the pre-deposited Ni coated quartz substrates by using an ultrasonic spray pyrolysis technique (USP). Subsequently, the WO3 films have been treated at 700°C in a sealed quartz ampoule filled with elemental sulphur and 0.2 bar N2/H2 forming gas for about 6 hr. The films have been investigated by using X-ray diffractometer (XRD), scanning electron microscopy (SEM), and optical absorption techniques. The photoactivity has been measured using time-resolved microwave conductivity (TRMC) technique. For comparison, the results of WS2 films grown on quartz substrates without pre-deposited nickel layer have been given.

AB - Photoactive thin films of tungsten disulphide (WS2) have been prepared by sulphurization of tungsten trioxide (WO3) thin films. WO3 films have been deposited in an inert atmosphere onto the pre-deposited Ni coated quartz substrates by using an ultrasonic spray pyrolysis technique (USP). Subsequently, the WO3 films have been treated at 700°C in a sealed quartz ampoule filled with elemental sulphur and 0.2 bar N2/H2 forming gas for about 6 hr. The films have been investigated by using X-ray diffractometer (XRD), scanning electron microscopy (SEM), and optical absorption techniques. The photoactivity has been measured using time-resolved microwave conductivity (TRMC) technique. For comparison, the results of WS2 films grown on quartz substrates without pre-deposited nickel layer have been given.

KW - Dichalcogenides

KW - Photovoltaics

KW - Solar cell

KW - Tungsten disulphide

KW - Van der Waals epitaxy

KW - WS thin films

UR - http://www.scopus.com/inward/record.url?scp=0141532087&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141532087&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0141532087

VL - 41

SP - 369

EP - 373

JO - Indian Journal of Pure and Applied Physics

JF - Indian Journal of Pure and Applied Physics

SN - 0019-5596

IS - 5

ER -