Formation of textured WS2 thin films by van der Waals rheotaxy process and their photoactivity

P. S. Patil, E. A. Ennaoui, S. Fiechter, H. Tributsch, S. B. Sadale

Research output: Contribution to journalArticle


Photoactive thin films of tungsten disulphide (WS2) have been prepared by sulphurization of tungsten trioxide (WO3) thin films. WO3 films have been deposited in an inert atmosphere onto the pre-deposited Ni coated quartz substrates by using an ultrasonic spray pyrolysis technique (USP). Subsequently, the WO3 films have been treated at 700°C in a sealed quartz ampoule filled with elemental sulphur and 0.2 bar N2/H2 forming gas for about 6 hr. The films have been investigated by using X-ray diffractometer (XRD), scanning electron microscopy (SEM), and optical absorption techniques. The photoactivity has been measured using time-resolved microwave conductivity (TRMC) technique. For comparison, the results of WS2 films grown on quartz substrates without pre-deposited nickel layer have been given.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalIndian Journal of Pure and Applied Physics
Issue number5
Publication statusPublished - 1 May 2003


  • Dichalcogenides
  • Photovoltaics
  • Solar cell
  • Tungsten disulphide
  • Van der Waals epitaxy
  • WS thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • General

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