Fast chemical bath deposition of Zn(O,S) buffer layers for Cu(In,Ga)Se 2 solar cells

Marie Buffiere, S. Harel, L. Arzel, C. Deudon, N. Barreau, J. Kessler

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

In order to decrease the deposition time of chemical bath deposited (CBD) Zn(O,S) buffer layers in CIGSe solar cell, the alternative CBD route using H2O2 as additional oxygen source has been investigated. The morphology and the optical properties of the Zn(O,S) thin films grown with and without additive have been compared through scanning electron microscopy (SEM) observations and UV-visible transmission T(λ) and reflectivity R(λ) measurements, respectively. It is observed that deposition time shorter than 5 min is sufficient to achieve films with similar properties to those deposited following the standard recipe in 15 min. The characteristics of CIGSe/Zn(O,S) structures for which the Zn(O,S) growth has been interrupted after different bath immersion durations have been investigated by XPS measurements. The evolution of the In3d and Zn2p3/2 signals reveals that after 2 min of deposition, the Zn(O,S) layer grown by the alternative process completely covers the CIGSe and suggests that the increase of the Zn(O,S) growth rate is most probably due to the acceleration of cluster mechanism growth. A comparative study of devices buffered with the so-called fast and standard Zn(O,S) shows similar efficiencies in either case after light soaking.

Original languageEnglish
Pages (from-to)7575-7578
Number of pages4
JournalThin Solid Films
Volume519
Issue number21
DOIs
Publication statusPublished - 31 Aug 2011
Externally publishedYes

Fingerprint

Buffer layers
baths
Solar cells
buffers
solar cells
soaking
submerging
X ray photoelectron spectroscopy
Optical properties
routes
Oxygen
reflectance
optical properties
Thin films
Scanning electron microscopy
scanning electron microscopy
oxygen
thin films

Keywords

  • Buffer layer
  • Cd-free
  • Chemical bath deposition
  • CIGSe
  • H O
  • Solar cells
  • ZnS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Fast chemical bath deposition of Zn(O,S) buffer layers for Cu(In,Ga)Se 2 solar cells. / Buffiere, Marie; Harel, S.; Arzel, L.; Deudon, C.; Barreau, N.; Kessler, J.

In: Thin Solid Films, Vol. 519, No. 21, 31.08.2011, p. 7575-7578.

Research output: Contribution to journalArticle

Buffiere, M, Harel, S, Arzel, L, Deudon, C, Barreau, N & Kessler, J 2011, 'Fast chemical bath deposition of Zn(O,S) buffer layers for Cu(In,Ga)Se 2 solar cells', Thin Solid Films, vol. 519, no. 21, pp. 7575-7578. https://doi.org/10.1016/j.tsf.2011.01.104
Buffiere, Marie ; Harel, S. ; Arzel, L. ; Deudon, C. ; Barreau, N. ; Kessler, J. / Fast chemical bath deposition of Zn(O,S) buffer layers for Cu(In,Ga)Se 2 solar cells. In: Thin Solid Films. 2011 ; Vol. 519, No. 21. pp. 7575-7578.
@article{b55b8bdb8ad246c78f30ae91c0e80a55,
title = "Fast chemical bath deposition of Zn(O,S) buffer layers for Cu(In,Ga)Se 2 solar cells",
abstract = "In order to decrease the deposition time of chemical bath deposited (CBD) Zn(O,S) buffer layers in CIGSe solar cell, the alternative CBD route using H2O2 as additional oxygen source has been investigated. The morphology and the optical properties of the Zn(O,S) thin films grown with and without additive have been compared through scanning electron microscopy (SEM) observations and UV-visible transmission T(λ) and reflectivity R(λ) measurements, respectively. It is observed that deposition time shorter than 5 min is sufficient to achieve films with similar properties to those deposited following the standard recipe in 15 min. The characteristics of CIGSe/Zn(O,S) structures for which the Zn(O,S) growth has been interrupted after different bath immersion durations have been investigated by XPS measurements. The evolution of the In3d and Zn2p3/2 signals reveals that after 2 min of deposition, the Zn(O,S) layer grown by the alternative process completely covers the CIGSe and suggests that the increase of the Zn(O,S) growth rate is most probably due to the acceleration of cluster mechanism growth. A comparative study of devices buffered with the so-called fast and standard Zn(O,S) shows similar efficiencies in either case after light soaking.",
keywords = "Buffer layer, Cd-free, Chemical bath deposition, CIGSe, H O, Solar cells, ZnS",
author = "Marie Buffiere and S. Harel and L. Arzel and C. Deudon and N. Barreau and J. Kessler",
year = "2011",
month = "8",
day = "31",
doi = "10.1016/j.tsf.2011.01.104",
language = "English",
volume = "519",
pages = "7575--7578",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "21",

}

TY - JOUR

T1 - Fast chemical bath deposition of Zn(O,S) buffer layers for Cu(In,Ga)Se 2 solar cells

AU - Buffiere, Marie

AU - Harel, S.

AU - Arzel, L.

AU - Deudon, C.

AU - Barreau, N.

AU - Kessler, J.

PY - 2011/8/31

Y1 - 2011/8/31

N2 - In order to decrease the deposition time of chemical bath deposited (CBD) Zn(O,S) buffer layers in CIGSe solar cell, the alternative CBD route using H2O2 as additional oxygen source has been investigated. The morphology and the optical properties of the Zn(O,S) thin films grown with and without additive have been compared through scanning electron microscopy (SEM) observations and UV-visible transmission T(λ) and reflectivity R(λ) measurements, respectively. It is observed that deposition time shorter than 5 min is sufficient to achieve films with similar properties to those deposited following the standard recipe in 15 min. The characteristics of CIGSe/Zn(O,S) structures for which the Zn(O,S) growth has been interrupted after different bath immersion durations have been investigated by XPS measurements. The evolution of the In3d and Zn2p3/2 signals reveals that after 2 min of deposition, the Zn(O,S) layer grown by the alternative process completely covers the CIGSe and suggests that the increase of the Zn(O,S) growth rate is most probably due to the acceleration of cluster mechanism growth. A comparative study of devices buffered with the so-called fast and standard Zn(O,S) shows similar efficiencies in either case after light soaking.

AB - In order to decrease the deposition time of chemical bath deposited (CBD) Zn(O,S) buffer layers in CIGSe solar cell, the alternative CBD route using H2O2 as additional oxygen source has been investigated. The morphology and the optical properties of the Zn(O,S) thin films grown with and without additive have been compared through scanning electron microscopy (SEM) observations and UV-visible transmission T(λ) and reflectivity R(λ) measurements, respectively. It is observed that deposition time shorter than 5 min is sufficient to achieve films with similar properties to those deposited following the standard recipe in 15 min. The characteristics of CIGSe/Zn(O,S) structures for which the Zn(O,S) growth has been interrupted after different bath immersion durations have been investigated by XPS measurements. The evolution of the In3d and Zn2p3/2 signals reveals that after 2 min of deposition, the Zn(O,S) layer grown by the alternative process completely covers the CIGSe and suggests that the increase of the Zn(O,S) growth rate is most probably due to the acceleration of cluster mechanism growth. A comparative study of devices buffered with the so-called fast and standard Zn(O,S) shows similar efficiencies in either case after light soaking.

KW - Buffer layer

KW - Cd-free

KW - Chemical bath deposition

KW - CIGSe

KW - H O

KW - Solar cells

KW - ZnS

UR - http://www.scopus.com/inward/record.url?scp=80052146817&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052146817&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.01.104

DO - 10.1016/j.tsf.2011.01.104

M3 - Article

VL - 519

SP - 7575

EP - 7578

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 21

ER -