Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO) electrodes

Ashok V. Rao, Said Mansour, Arden L. Bernent

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Conductive metal oxide contacts were used in the fabrication of fatigue-resistant lead zirconate titanate (PZT) capacitors. The successful fabrication and characterization of PZT thin-film capacitors with transparent conducting indium tin oxide (ITO) contacts using a combination of metallo-organic decomposition (MOD) and rf-sputtering are described. High remnant polarization, improved fatigue resistance, and a leakage current density of 10-4 A/cm2 were found in ITO-PZT-ITO capacitors.

Original languageEnglish
Pages (from-to)255-258
Number of pages4
JournalMaterials Letters
Volume29
Issue number4-6
Publication statusPublished - 1 Dec 1996
Externally publishedYes

Fingerprint

Ferroelectric thin films
Tin oxides
indium oxides
Indium
tin oxides
capacitors
Fabrication
Electrodes
fabrication
electrodes
Capacitors
thin films
Fatigue of materials
Leakage currents
Oxides
Sputtering
metal oxides
leakage
Current density
Lead

Keywords

  • Capacitor
  • Conductive oxide
  • Fatigue resistant
  • Ferroelectric lead zirconate titanate
  • Indium tin oxide
  • Leakage current

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO) electrodes. / Rao, Ashok V.; Mansour, Said; Bernent, Arden L.

In: Materials Letters, Vol. 29, No. 4-6, 01.12.1996, p. 255-258.

Research output: Contribution to journalArticle

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