Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO) electrodes

Ashok V. Rao, Said Mansour, Arden L. Bernent

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Conductive metal oxide contacts were used in the fabrication of fatigue-resistant lead zirconate titanate (PZT) capacitors. The successful fabrication and characterization of PZT thin-film capacitors with transparent conducting indium tin oxide (ITO) contacts using a combination of metallo-organic decomposition (MOD) and rf-sputtering are described. High remnant polarization, improved fatigue resistance, and a leakage current density of 10-4 A/cm2 were found in ITO-PZT-ITO capacitors.

Original languageEnglish
Pages (from-to)255-258
Number of pages4
JournalMaterials Letters
Volume29
Issue number4-6
Publication statusPublished - 1 Dec 1996
Externally publishedYes

    Fingerprint

Keywords

  • Capacitor
  • Conductive oxide
  • Fatigue resistant
  • Ferroelectric lead zirconate titanate
  • Indium tin oxide
  • Leakage current

ASJC Scopus subject areas

  • Materials Science(all)

Cite this