Fabrication of CuInS2 films from electrodeposited Cu/In bilayers

Effects of preheat treatment on their structural, photoelectrochemical and solar cell properties

Sun Min Lee, Shigeru Ikeda, Tetsuro Yagi, Takashi Harada, Ahmed Ennaoui, Michio Matsumura

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Polycrystalline CuInS2 films were fabricated by sulfurization of electrodeposited Cu and In metallic precursor films in a Cu-rich composition at 520 °C in H2S (5% in Ar). Structural analyses revealed that the adherence of the thus-formed CuInS2 film to the Mo substrate was strongly dependent on heating profiles of the Cu/In bilayer film: a CuInS 2 film with poor adherence having many crevices was formed when the Cu/In bilayer film was heated monotonously from room temperature to 520 °C in Ar within 25 min followed by sulfurization, whereas CuInS2 films with good adherence were obtained when the Cu/In films were pretreated at 110 °C in Ar for 10-60 min just before increasing the temperature up to 520 °C for sulfurization. It was also clarified that the CuInS2 film obtained without 110 °C pretreatment had pinholes inside the film, whereas the CuInS2 films formed after 110 °C pretreatment showed no notable pinholes. Photoelectrochemical responses of these CuInS2 films in an electrolyte solution containing Eu(iii) indicated that the CuInS2 films obtained after 110 °C pretreatment had higher external quantum efficiency (EQE) values than those of films obtained without 110 °C pretreatment, mainly due to better adherence of 110 °C pretreated CuInS2 films to the Mo substrate than the CuInS2 film obtained without 110 °C pretreatment. The performance of solar cells with an Al:ZnO/Zn(S,O)/CdS/CuInS2/Mo structure also depended on the structural characteristics of the CuInS2 films, i.e., preliminary conversion efficiencies of ca. 5% were obtained for devices based on the CuInS2 films obtained after 110 °C pretreatment, whereas the device prepared by the CuInS2 film without 110 °C pretreatment showed the conversion efficiency less than 1.5%.

Original languageEnglish
Pages (from-to)6662-6669
Number of pages8
JournalPhysical Chemistry Chemical Physics
Volume13
Issue number14
DOIs
Publication statusPublished - 14 Apr 2011
Externally publishedYes

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Photoelectrochemical cells
Solar cells
solar cells
Fabrication
Equipment and Supplies
fabrication
Temperature
cells
Heating
Electrolytes
pretreatment
pinholes
Conversion efficiency

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Physics and Astronomy(all)
  • Medicine(all)

Cite this

Fabrication of CuInS2 films from electrodeposited Cu/In bilayers : Effects of preheat treatment on their structural, photoelectrochemical and solar cell properties. / Lee, Sun Min; Ikeda, Shigeru; Yagi, Tetsuro; Harada, Takashi; Ennaoui, Ahmed; Matsumura, Michio.

In: Physical Chemistry Chemical Physics, Vol. 13, No. 14, 14.04.2011, p. 6662-6669.

Research output: Contribution to journalArticle

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title = "Fabrication of CuInS2 films from electrodeposited Cu/In bilayers: Effects of preheat treatment on their structural, photoelectrochemical and solar cell properties",
abstract = "Polycrystalline CuInS2 films were fabricated by sulfurization of electrodeposited Cu and In metallic precursor films in a Cu-rich composition at 520 °C in H2S (5{\%} in Ar). Structural analyses revealed that the adherence of the thus-formed CuInS2 film to the Mo substrate was strongly dependent on heating profiles of the Cu/In bilayer film: a CuInS 2 film with poor adherence having many crevices was formed when the Cu/In bilayer film was heated monotonously from room temperature to 520 °C in Ar within 25 min followed by sulfurization, whereas CuInS2 films with good adherence were obtained when the Cu/In films were pretreated at 110 °C in Ar for 10-60 min just before increasing the temperature up to 520 °C for sulfurization. It was also clarified that the CuInS2 film obtained without 110 °C pretreatment had pinholes inside the film, whereas the CuInS2 films formed after 110 °C pretreatment showed no notable pinholes. Photoelectrochemical responses of these CuInS2 films in an electrolyte solution containing Eu(iii) indicated that the CuInS2 films obtained after 110 °C pretreatment had higher external quantum efficiency (EQE) values than those of films obtained without 110 °C pretreatment, mainly due to better adherence of 110 °C pretreated CuInS2 films to the Mo substrate than the CuInS2 film obtained without 110 °C pretreatment. The performance of solar cells with an Al:ZnO/Zn(S,O)/CdS/CuInS2/Mo structure also depended on the structural characteristics of the CuInS2 films, i.e., preliminary conversion efficiencies of ca. 5{\%} were obtained for devices based on the CuInS2 films obtained after 110 °C pretreatment, whereas the device prepared by the CuInS2 film without 110 °C pretreatment showed the conversion efficiency less than 1.5{\%}.",
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