Fabrication of a low power CMOS-compatible ZnO nanocomb-based gas sensor

Xiaofang Pan, Xiaojin Zhao, Amine Bermak, Zhiyong Fan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a novel CMOS-compatible ZnO nanocomb-based gas sensor is presented. Compared with previously reported implementations, the proposed ZnO nanocombs feature multiple conducting channels and much larger effective sensing area, both of which result in dramatically improved sensitivity (6.54 for 250 ppm CO), response time (3.4 min) and recovery time (0.24 min). In addition, by operating the gas sensor at room temperature, additional power-hungry heating components inevitable in traditional implementations are completely removed. This not only leads to low power consumption, but also avoids the high-temperature-caused reliability degradation when integrated with CMOS circuitry.

Original languageEnglish
Title of host publicationISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems
Pages3270-3273
Number of pages4
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of
Duration: 20 May 201223 May 2012

Other

Other2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012
CountryKorea, Republic of
CitySeoul
Period20/5/1223/5/12

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Pan, X., Zhao, X., Bermak, A., & Fan, Z. (2012). Fabrication of a low power CMOS-compatible ZnO nanocomb-based gas sensor. In ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems (pp. 3270-3273). [6272023] https://doi.org/10.1109/ISCAS.2012.6272023