Epitaxial growth and characterization of Ce1-xZrxO2 thin films

Y. Gao, G. S. Herman, S. Thevuthasan, C. H.F. Peden, S. A. Chambers

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    Abstract

    Epitaxial films of mixed Ce1-xZrxO2(001) oxides with x≤0.3 have been grown on SrTiO3(001) by oxygen-plasma-assisted molecular beam epitaxy. The film growth at 600°C is predominantly nucleation and growth of three-dimensional islands. The films become much smoother after rapid thermal annealing at 700°C fo 30 s in the oxygen plasma. High-energy ion channeling reveals that Zr atoms substitutionally incorporate at cation sites in the CeO2 lattice for all doping levels, leading to Ce1-xZrxO2 solid solutions. Analysis of Zr 3d and Ce 3d core-level binding energies shows that the oxidation state of both Zr and Ce is +4. Lattice distortion induced by incorporation of Zr in the CeO2 lattice become prevalent for high doping levels and surface roughen accordingly.

    Original languageEnglish
    Pages (from-to)961-969
    Number of pages9
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume17
    Issue number3
    DOIs
    Publication statusPublished - 1 Jan 1999

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    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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