Epitaxial growth and characterization of Ce1-xZrxO2 thin films

Y. Gao, G. S. Herman, S. Thevuthasan, C. H F Peden, S. A. Chambers

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Epitaxial films of mixed Ce1-xZrxO2(001) oxides with x≤0.3 have been grown on SrTiO3(001) by oxygen-plasma-assisted molecular beam epitaxy. The film growth at 600°C is predominantly nucleation and growth of three-dimensional islands. The films become much smoother after rapid thermal annealing at 700°C fo 30 s in the oxygen plasma. High-energy ion channeling reveals that Zr atoms substitutionally incorporate at cation sites in the CeO2 lattice for all doping levels, leading to Ce1-xZrxO2 solid solutions. Analysis of Zr 3d and Ce 3d core-level binding energies shows that the oxidation state of both Zr and Ce is +4. Lattice distortion induced by incorporation of Zr in the CeO2 lattice become prevalent for high doping levels and surface roughen accordingly.

Original languageEnglish
Pages (from-to)961-969
Number of pages9
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number3
Publication statusPublished - May 1999
Externally publishedYes

Fingerprint

Epitaxial growth
Doping (additives)
oxygen plasma
Oxygen
Plasmas
Thin films
Core levels
Rapid thermal annealing
Epitaxial films
Film growth
thin films
Binding energy
Molecular beam epitaxy
Oxides
Cations
Solid solutions
Nucleation
Positive ions
Ions
Atoms

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Gao, Y., Herman, G. S., Thevuthasan, S., Peden, C. H. F., & Chambers, S. A. (1999). Epitaxial growth and characterization of Ce1-xZrxO2 thin films. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 17(3), 961-969.

Epitaxial growth and characterization of Ce1-xZrxO2 thin films. / Gao, Y.; Herman, G. S.; Thevuthasan, S.; Peden, C. H F; Chambers, S. A.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 3, 05.1999, p. 961-969.

Research output: Contribution to journalArticle

Gao, Y, Herman, GS, Thevuthasan, S, Peden, CHF & Chambers, SA 1999, 'Epitaxial growth and characterization of Ce1-xZrxO2 thin films', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 17, no. 3, pp. 961-969.
Gao, Y. ; Herman, G. S. ; Thevuthasan, S. ; Peden, C. H F ; Chambers, S. A. / Epitaxial growth and characterization of Ce1-xZrxO2 thin films. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1999 ; Vol. 17, No. 3. pp. 961-969.
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