Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor

J. W. Park, K. S. Park, B. T. Lee, C. H. Lee, S. D. Lee, Jung B. Choi, K. H. Yoo, J. Kim, Sangchul Oh, S. I. Park, K. T. Kim, J. J. Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A dual-gate-controlled single-electron transistor with coupled dot geometry has been fabricated on a silicon-on-insulator structure. Coupled dots are defined by tunable gates which are designed to separately control the tunneling potential barriers to compensate for disorder due to size fluctuation in quantum dots. The Coulomb-blockade phenomena observed in linear and nonlinear transport regimes were found to be enhanced by the multidot coupling. The Coulomb staircase (nonlinear effect) appears more clearly with the increasing number of coupled dots, indicating definite suppression of the inevitable cotunneling process. In the linear regime, the frequency of Coulomb oscillation was able to be tuned by changing the interdot coupling strength. 'These results indicate that enhancement of the Coulomb blockade and tunability can be achieved through replacing the traditional single dot by gate-controlled multidots in future single-electron devices.

Original languageEnglish
Pages (from-to)566-568
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number4
Publication statusPublished - 26 Jul 1999
Externally publishedYes

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single electron transistors
insulators
augmentation
silicon
stairways
quantum dots
retarding
disorders
oscillations
geometry
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Park, J. W., Park, K. S., Lee, B. T., Lee, C. H., Lee, S. D., Choi, J. B., ... Kim, J. J. (1999). Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor. Applied Physics Letters, 75(4), 566-568.

Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor. / Park, J. W.; Park, K. S.; Lee, B. T.; Lee, C. H.; Lee, S. D.; Choi, Jung B.; Yoo, K. H.; Kim, J.; Oh, Sangchul; Park, S. I.; Kim, K. T.; Kim, J. J.

In: Applied Physics Letters, Vol. 75, No. 4, 26.07.1999, p. 566-568.

Research output: Contribution to journalArticle

Park, JW, Park, KS, Lee, BT, Lee, CH, Lee, SD, Choi, JB, Yoo, KH, Kim, J, Oh, S, Park, SI, Kim, KT & Kim, JJ 1999, 'Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor', Applied Physics Letters, vol. 75, no. 4, pp. 566-568.
Park, J. W. ; Park, K. S. ; Lee, B. T. ; Lee, C. H. ; Lee, S. D. ; Choi, Jung B. ; Yoo, K. H. ; Kim, J. ; Oh, Sangchul ; Park, S. I. ; Kim, K. T. ; Kim, J. J. / Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor. In: Applied Physics Letters. 1999 ; Vol. 75, No. 4. pp. 566-568.
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