Elimination of reverse recovery effects associated with CoolMOS devices employing current source inverter topology

M. M. Farag, S. M. Gadoue, A. L. Mohamadein, A. M. Massoud, Shehab Ahmed

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

MOSFET transistors are continuously being an essential part of power electronic converters due to their low switching losses at high switching frequencies. However, the traditional power MOSFET suffers from a relatively low breakdown voltage. In the late 1990's, the CoolMOS transistor was launched by Infineon Technologies based on the super junction technology. This device is capable of blocking a considerably higher source to drain voltage and virtually combines the low on-state resistance of the IGBT with the low switching losses of the MOSFET. The main problem associated with this device is that the reverse characteristics of its internal body diode are found to be snappier than that of the conventional MOSFET. This makes it difficult to use this device in hard switched inverters employing Voltage Source Inverter (VSI) topology. In this paper different factors affecting the reverse recovery behaviour of the internal body diode of CoolMOS power switch are studied. Moreover, a technique to eliminate high reverse recovery peak currents in CoolMOS-based inverters is proposed based on Current Source Inverter (CSI) topology accompanied with silicon carbide Schottky diode. Simulation and experimental tests are carried out to compare between the peak current and the switching losses of CoolMOS employed in both VSI and CSI topologies. The experimental results confirm the improvement achieved using CSI.

Original languageEnglish
Title of host publication6th IET International Conference on Power Electronics, Machines and Drives, PEMD 2012
Volume2012
Edition592 CP
DOIs
Publication statusPublished - 2012
Event6th IET International Conference on Power Electronics, Machines and Drives, PEMD 2012 - Bristol, United Kingdom
Duration: 27 Mar 201229 Mar 2012

Other

Other6th IET International Conference on Power Electronics, Machines and Drives, PEMD 2012
CountryUnited Kingdom
CityBristol
Period27/3/1229/3/12

Fingerprint

Diodes
Topology
Recovery
Transistors
Electric potential
Insulated gate bipolar transistors (IGBT)
Switching frequency
Power electronics
Electric breakdown
Silicon carbide
Switches
Power MOSFET

Keywords

  • CoolMOS
  • Current source inverter
  • Reverse recovery

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Farag, M. M., Gadoue, S. M., Mohamadein, A. L., Massoud, A. M., & Ahmed, S. (2012). Elimination of reverse recovery effects associated with CoolMOS devices employing current source inverter topology. In 6th IET International Conference on Power Electronics, Machines and Drives, PEMD 2012 (592 CP ed., Vol. 2012) https://doi.org/10.1049/cp.2012.0151

Elimination of reverse recovery effects associated with CoolMOS devices employing current source inverter topology. / Farag, M. M.; Gadoue, S. M.; Mohamadein, A. L.; Massoud, A. M.; Ahmed, Shehab.

6th IET International Conference on Power Electronics, Machines and Drives, PEMD 2012. Vol. 2012 592 CP. ed. 2012.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Farag, MM, Gadoue, SM, Mohamadein, AL, Massoud, AM & Ahmed, S 2012, Elimination of reverse recovery effects associated with CoolMOS devices employing current source inverter topology. in 6th IET International Conference on Power Electronics, Machines and Drives, PEMD 2012. 592 CP edn, vol. 2012, 6th IET International Conference on Power Electronics, Machines and Drives, PEMD 2012, Bristol, United Kingdom, 27/3/12. https://doi.org/10.1049/cp.2012.0151
Farag MM, Gadoue SM, Mohamadein AL, Massoud AM, Ahmed S. Elimination of reverse recovery effects associated with CoolMOS devices employing current source inverter topology. In 6th IET International Conference on Power Electronics, Machines and Drives, PEMD 2012. 592 CP ed. Vol. 2012. 2012 https://doi.org/10.1049/cp.2012.0151
Farag, M. M. ; Gadoue, S. M. ; Mohamadein, A. L. ; Massoud, A. M. ; Ahmed, Shehab. / Elimination of reverse recovery effects associated with CoolMOS devices employing current source inverter topology. 6th IET International Conference on Power Electronics, Machines and Drives, PEMD 2012. Vol. 2012 592 CP. ed. 2012.
@inproceedings{d488c3248b684a56b41aee0deec5d037,
title = "Elimination of reverse recovery effects associated with CoolMOS devices employing current source inverter topology",
abstract = "MOSFET transistors are continuously being an essential part of power electronic converters due to their low switching losses at high switching frequencies. However, the traditional power MOSFET suffers from a relatively low breakdown voltage. In the late 1990's, the CoolMOS transistor was launched by Infineon Technologies based on the super junction technology. This device is capable of blocking a considerably higher source to drain voltage and virtually combines the low on-state resistance of the IGBT with the low switching losses of the MOSFET. The main problem associated with this device is that the reverse characteristics of its internal body diode are found to be snappier than that of the conventional MOSFET. This makes it difficult to use this device in hard switched inverters employing Voltage Source Inverter (VSI) topology. In this paper different factors affecting the reverse recovery behaviour of the internal body diode of CoolMOS power switch are studied. Moreover, a technique to eliminate high reverse recovery peak currents in CoolMOS-based inverters is proposed based on Current Source Inverter (CSI) topology accompanied with silicon carbide Schottky diode. Simulation and experimental tests are carried out to compare between the peak current and the switching losses of CoolMOS employed in both VSI and CSI topologies. The experimental results confirm the improvement achieved using CSI.",
keywords = "CoolMOS, Current source inverter, Reverse recovery",
author = "Farag, {M. M.} and Gadoue, {S. M.} and Mohamadein, {A. L.} and Massoud, {A. M.} and Shehab Ahmed",
year = "2012",
doi = "10.1049/cp.2012.0151",
language = "English",
isbn = "9781849196161",
volume = "2012",
booktitle = "6th IET International Conference on Power Electronics, Machines and Drives, PEMD 2012",
edition = "592 CP",

}

TY - GEN

T1 - Elimination of reverse recovery effects associated with CoolMOS devices employing current source inverter topology

AU - Farag, M. M.

AU - Gadoue, S. M.

AU - Mohamadein, A. L.

AU - Massoud, A. M.

AU - Ahmed, Shehab

PY - 2012

Y1 - 2012

N2 - MOSFET transistors are continuously being an essential part of power electronic converters due to their low switching losses at high switching frequencies. However, the traditional power MOSFET suffers from a relatively low breakdown voltage. In the late 1990's, the CoolMOS transistor was launched by Infineon Technologies based on the super junction technology. This device is capable of blocking a considerably higher source to drain voltage and virtually combines the low on-state resistance of the IGBT with the low switching losses of the MOSFET. The main problem associated with this device is that the reverse characteristics of its internal body diode are found to be snappier than that of the conventional MOSFET. This makes it difficult to use this device in hard switched inverters employing Voltage Source Inverter (VSI) topology. In this paper different factors affecting the reverse recovery behaviour of the internal body diode of CoolMOS power switch are studied. Moreover, a technique to eliminate high reverse recovery peak currents in CoolMOS-based inverters is proposed based on Current Source Inverter (CSI) topology accompanied with silicon carbide Schottky diode. Simulation and experimental tests are carried out to compare between the peak current and the switching losses of CoolMOS employed in both VSI and CSI topologies. The experimental results confirm the improvement achieved using CSI.

AB - MOSFET transistors are continuously being an essential part of power electronic converters due to their low switching losses at high switching frequencies. However, the traditional power MOSFET suffers from a relatively low breakdown voltage. In the late 1990's, the CoolMOS transistor was launched by Infineon Technologies based on the super junction technology. This device is capable of blocking a considerably higher source to drain voltage and virtually combines the low on-state resistance of the IGBT with the low switching losses of the MOSFET. The main problem associated with this device is that the reverse characteristics of its internal body diode are found to be snappier than that of the conventional MOSFET. This makes it difficult to use this device in hard switched inverters employing Voltage Source Inverter (VSI) topology. In this paper different factors affecting the reverse recovery behaviour of the internal body diode of CoolMOS power switch are studied. Moreover, a technique to eliminate high reverse recovery peak currents in CoolMOS-based inverters is proposed based on Current Source Inverter (CSI) topology accompanied with silicon carbide Schottky diode. Simulation and experimental tests are carried out to compare between the peak current and the switching losses of CoolMOS employed in both VSI and CSI topologies. The experimental results confirm the improvement achieved using CSI.

KW - CoolMOS

KW - Current source inverter

KW - Reverse recovery

UR - http://www.scopus.com/inward/record.url?scp=84864693679&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864693679&partnerID=8YFLogxK

U2 - 10.1049/cp.2012.0151

DO - 10.1049/cp.2012.0151

M3 - Conference contribution

SN - 9781849196161

VL - 2012

BT - 6th IET International Conference on Power Electronics, Machines and Drives, PEMD 2012

ER -