Electronic Raman continuum for YBa2Cu3O7-δ

Effects of inelastic scattering and interband transitions

Sergey Rashkeev, G. Wendin

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The electronic Raman continuum in YBa2Cu3O7 is calculated in a model which takes into account strong inelastic scattering and interband transitions. The ab-plane polarized continuum contains a large contribution from interband processes and does not depend strongly on temperature and the inelastic scattering strength. The in-plane anisotropy is determined by the interband transitions rather than by the anisotropy of the Fermi surface. The ZZ continuum can be crudely described within a single-band model with inelastic scattering and is very dependent on the relaxation rates of inelastic scattering. The nature of the oxygen-deficiency dependence of the Raman spectra is also commented upon.

Original languageEnglish
Pages (from-to)11603-11606
Number of pages4
JournalPhysical Review B
Volume47
Issue number17
DOIs
Publication statusPublished - 1 Dec 1993
Externally publishedYes

Fingerprint

Inelastic scattering
inelastic scattering
continuums
electronics
Anisotropy
anisotropy
Fermi surface
hypoxia
Electron transitions
Fermi surfaces
Raman scattering
Raman spectra
Oxygen
barium copper yttrium oxide
Temperature
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electronic Raman continuum for YBa2Cu3O7-δ : Effects of inelastic scattering and interband transitions. / Rashkeev, Sergey; Wendin, G.

In: Physical Review B, Vol. 47, No. 17, 01.12.1993, p. 11603-11606.

Research output: Contribution to journalArticle

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