Electronic Raman continuum for YBa2Cu3O7-δ: Effects of inelastic scattering and interband transitions

Sergey Rashkeev, G. Wendin

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Abstract

The electronic Raman continuum in YBa2Cu3O7 is calculated in a model which takes into account strong inelastic scattering and interband transitions. The ab-plane polarized continuum contains a large contribution from interband processes and does not depend strongly on temperature and the inelastic scattering strength. The in-plane anisotropy is determined by the interband transitions rather than by the anisotropy of the Fermi surface. The ZZ continuum can be crudely described within a single-band model with inelastic scattering and is very dependent on the relaxation rates of inelastic scattering. The nature of the oxygen-deficiency dependence of the Raman spectra is also commented upon.

Original languageEnglish
Pages (from-to)11603-11606
Number of pages4
JournalPhysical Review B
Volume47
Issue number17
DOIs
Publication statusPublished - 1 Dec 1993
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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