Electronic and optical properties of the group-III nitrides, their heterostructures and alloys

Walter R L Lambrecht, Kim Kwiseon, Sergey Rashkeev, B. Segall

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Citations (Scopus)


Various aspects of the electronic structure of the group III nitrides are discussed. The relation between band structures and optical response in the vacuum ultraviolet is analyzed for zincblende and wurtzite GaN and for wurtzite AlN and compared with available experimental data obtained from reflectivity and spectroscopic ellipsometry. The spin-orbit and crystal field splittings of the valence band edges and their relations to exciton fine structure are discussed including substrate induced biaxial strain effects. The band-offsets between the III-nitrides and some relevant semiconductor substrates obtained within the dielectric midgap energy model are presented and strain effects which may alter these values are discussed. The importance of lattice mismatch in bandgap bowing is exemplified by comparing Al xGa 1-x and In xGa 1-xN.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages12
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 26 Nov 19951 Dec 1995


OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lambrecht, W. R. L., Kwiseon, K., Rashkeev, S., & Segall, B. (1996). Electronic and optical properties of the group-III nitrides, their heterostructures and alloys. In Materials Research Society Symposium - Proceedings (Vol. 395, pp. 455-466). Materials Research Society.