Electronic and optical properties of the group-III nitrides, their heterostructures and alloys

Walter R L Lambrecht, Kim Kwiseon, Sergey Rashkeev, B. Segall

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Citations (Scopus)

Abstract

Various aspects of the electronic structure of the group III nitrides are discussed. The relation between band structures and optical response in the vacuum ultraviolet is analyzed for zincblende and wurtzite GaN and for wurtzite AlN and compared with available experimental data obtained from reflectivity and spectroscopic ellipsometry. The spin-orbit and crystal field splittings of the valence band edges and their relations to exciton fine structure are discussed including substrate induced biaxial strain effects. The band-offsets between the III-nitrides and some relevant semiconductor substrates obtained within the dielectric midgap energy model are presented and strain effects which may alter these values are discussed. The importance of lattice mismatch in bandgap bowing is exemplified by comparing Al xGa 1-x and In xGa 1-xN.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages455-466
Number of pages12
Volume395
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 26 Nov 19951 Dec 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period26/11/951/12/95

Fingerprint

Nitrides
Electronic properties
Heterojunctions
Optical properties
Bending (forming)
Lattice mismatch
Spectroscopic ellipsometry
Substrates
Valence bands
Excitons
Band structure
Electronic structure
Orbits
Energy gap
Vacuum
Semiconductor materials
Crystals
LDS 751

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lambrecht, W. R. L., Kwiseon, K., Rashkeev, S., & Segall, B. (1996). Electronic and optical properties of the group-III nitrides, their heterostructures and alloys. In Materials Research Society Symposium - Proceedings (Vol. 395, pp. 455-466). Materials Research Society.

Electronic and optical properties of the group-III nitrides, their heterostructures and alloys. / Lambrecht, Walter R L; Kwiseon, Kim; Rashkeev, Sergey; Segall, B.

Materials Research Society Symposium - Proceedings. Vol. 395 Materials Research Society, 1996. p. 455-466.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lambrecht, WRL, Kwiseon, K, Rashkeev, S & Segall, B 1996, Electronic and optical properties of the group-III nitrides, their heterostructures and alloys. in Materials Research Society Symposium - Proceedings. vol. 395, Materials Research Society, pp. 455-466, Proceedings of the 1995 MRS Fall Meeting, Boston, MA, USA, 26/11/95.
Lambrecht WRL, Kwiseon K, Rashkeev S, Segall B. Electronic and optical properties of the group-III nitrides, their heterostructures and alloys. In Materials Research Society Symposium - Proceedings. Vol. 395. Materials Research Society. 1996. p. 455-466
Lambrecht, Walter R L ; Kwiseon, Kim ; Rashkeev, Sergey ; Segall, B. / Electronic and optical properties of the group-III nitrides, their heterostructures and alloys. Materials Research Society Symposium - Proceedings. Vol. 395 Materials Research Society, 1996. pp. 455-466
@inproceedings{a471349f45154cc3979dce44d17703c0,
title = "Electronic and optical properties of the group-III nitrides, their heterostructures and alloys",
abstract = "Various aspects of the electronic structure of the group III nitrides are discussed. The relation between band structures and optical response in the vacuum ultraviolet is analyzed for zincblende and wurtzite GaN and for wurtzite AlN and compared with available experimental data obtained from reflectivity and spectroscopic ellipsometry. The spin-orbit and crystal field splittings of the valence band edges and their relations to exciton fine structure are discussed including substrate induced biaxial strain effects. The band-offsets between the III-nitrides and some relevant semiconductor substrates obtained within the dielectric midgap energy model are presented and strain effects which may alter these values are discussed. The importance of lattice mismatch in bandgap bowing is exemplified by comparing Al xGa 1-x and In xGa 1-xN.",
author = "Lambrecht, {Walter R L} and Kim Kwiseon and Sergey Rashkeev and B. Segall",
year = "1996",
language = "English",
volume = "395",
pages = "455--466",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Electronic and optical properties of the group-III nitrides, their heterostructures and alloys

AU - Lambrecht, Walter R L

AU - Kwiseon, Kim

AU - Rashkeev, Sergey

AU - Segall, B.

PY - 1996

Y1 - 1996

N2 - Various aspects of the electronic structure of the group III nitrides are discussed. The relation between band structures and optical response in the vacuum ultraviolet is analyzed for zincblende and wurtzite GaN and for wurtzite AlN and compared with available experimental data obtained from reflectivity and spectroscopic ellipsometry. The spin-orbit and crystal field splittings of the valence band edges and their relations to exciton fine structure are discussed including substrate induced biaxial strain effects. The band-offsets between the III-nitrides and some relevant semiconductor substrates obtained within the dielectric midgap energy model are presented and strain effects which may alter these values are discussed. The importance of lattice mismatch in bandgap bowing is exemplified by comparing Al xGa 1-x and In xGa 1-xN.

AB - Various aspects of the electronic structure of the group III nitrides are discussed. The relation between band structures and optical response in the vacuum ultraviolet is analyzed for zincblende and wurtzite GaN and for wurtzite AlN and compared with available experimental data obtained from reflectivity and spectroscopic ellipsometry. The spin-orbit and crystal field splittings of the valence band edges and their relations to exciton fine structure are discussed including substrate induced biaxial strain effects. The band-offsets between the III-nitrides and some relevant semiconductor substrates obtained within the dielectric midgap energy model are presented and strain effects which may alter these values are discussed. The importance of lattice mismatch in bandgap bowing is exemplified by comparing Al xGa 1-x and In xGa 1-xN.

UR - http://www.scopus.com/inward/record.url?scp=0029748161&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029748161&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029748161

VL - 395

SP - 455

EP - 466

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -