Electromagnetic energy absorption potential and microwave heating capacity of SiC thin films in the 1-16 GHz frequency range

B. Aïssa, N. Tabet, M. Nedil, D. Therriault, F. Rosei, R. Nechache

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18 Citations (Scopus)

Abstract

We report on the electromagnetic (EM) absorption potential and microwave heating capacity of amorphous hydrogenated silicon carbide thin films (a-SiC:H) in the 1-16 GHz frequency domain. a-SiC:H thin films with typical thickness of 1 μm were deposited by plasma enhanced chemical vapor deposition on [1 0 0] undoped silicon substrates, and exhibit a deep EM absorption - up to 96% of the total EM energy irradiation - which is systematically converted into heat. Two-wavelength pyrometer tests show that temperatures exceeding 2000 K can be reached in a very short time, less than 100 s exposure to microwaves, showing a promising potential for specific microwave heating applications.

Original languageEnglish
Pages (from-to)5482-5485
Number of pages4
JournalApplied Surface Science
Volume258
Issue number14
DOIs
Publication statusPublished - 1 May 2012

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Keywords

  • EM absorption
  • Microwave heating
  • PECVD
  • Silicon carbide materials

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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