Electromagnetic energy absorption potential and microwave heating capacity of SiC thin films in the 1-16 GHz frequency range

Brahim Aissa, Nouar Tabet, M. Nedil, D. Therriault, F. Rosei, R. Nechache

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We report on the electromagnetic (EM) absorption potential and microwave heating capacity of amorphous hydrogenated silicon carbide thin films (a-SiC:H) in the 1-16 GHz frequency domain. a-SiC:H thin films with typical thickness of 1 μm were deposited by plasma enhanced chemical vapor deposition on [1 0 0] undoped silicon substrates, and exhibit a deep EM absorption - up to 96% of the total EM energy irradiation - which is systematically converted into heat. Two-wavelength pyrometer tests show that temperatures exceeding 2000 K can be reached in a very short time, less than 100 s exposure to microwaves, showing a promising potential for specific microwave heating applications.

Original languageEnglish
Pages (from-to)5482-5485
Number of pages4
JournalApplied Surface Science
Volume258
Issue number14
DOIs
Publication statusPublished - 1 May 2012
Externally publishedYes

Fingerprint

Electromagnetic wave absorption
Microwave heating
Energy absorption
Electromagnetic waves
Pyrometers
Thin films
Silicon
Plasma enhanced chemical vapor deposition
Silicon carbide
Microwaves
Irradiation
Wavelength
Substrates
Temperature

Keywords

  • EM absorption
  • Microwave heating
  • PECVD
  • Silicon carbide materials

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Electromagnetic energy absorption potential and microwave heating capacity of SiC thin films in the 1-16 GHz frequency range. / Aissa, Brahim; Tabet, Nouar; Nedil, M.; Therriault, D.; Rosei, F.; Nechache, R.

In: Applied Surface Science, Vol. 258, No. 14, 01.05.2012, p. 5482-5485.

Research output: Contribution to journalArticle

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AU - Rosei, F.

AU - Nechache, R.

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