Abstract
Thin polycrystalline films of cadmium chalcogenides CdSexTe1-x (0≤ × ≤ 1) have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90°C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSexTe1-x films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.
| Original language | English |
|---|---|
| Pages (from-to) | 301-310 |
| Number of pages | 10 |
| Journal | Solid State Sciences |
| Volume | 1 |
| Issue number | 5 |
| Publication status | Published - Jul 1999 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry
Cite this
Electrodeposition and characterization of CdSexTe1-x semiconducting thin films. / Benamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A.
In: Solid State Sciences, Vol. 1, No. 5, 07.1999, p. 301-310.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrodeposition and characterization of CdSexTe1-x semiconducting thin films
AU - Benamar, E.
AU - Rami, M.
AU - Fahoume, M.
AU - Chraibi, F.
AU - Ennaoui, A.
PY - 1999/7
Y1 - 1999/7
N2 - Thin polycrystalline films of cadmium chalcogenides CdSexTe1-x (0≤ × ≤ 1) have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90°C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSexTe1-x films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.
AB - Thin polycrystalline films of cadmium chalcogenides CdSexTe1-x (0≤ × ≤ 1) have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90°C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSexTe1-x films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.
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UR - http://www.scopus.com/inward/citedby.url?scp=0040320536&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0040320536
VL - 1
SP - 301
EP - 310
JO - Solid State Sciences
JF - Solid State Sciences
SN - 1293-2558
IS - 5
ER -