Electrochemical method for evaluation of structural perfection of hydrogen-terminated Si(111) surface

Fahd Bensliman, Mohammed Aggour, Ahmed Ennaoui, Michio Matsumura

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In this study, we measured the electrochemical oxidation currents on n-Si(111) surfaces at a potential near the flat-band potential. The current became small when the surface was treated with oxygen-free water, which is effective for flattening the Si(111) surface, before the electrochemical measurement. This current was attributed to the oxidation of Si atoms on step and kink sites, and was concluded to be a good measure of the structural perfection of Si(111) surfaces.

Original languageEnglish
Pages (from-to)L1206-L1208
JournalJapanese journal of applied physics
Issue number12 A
Publication statusPublished - 1 Jan 2000


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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