Electrochemical method for evaluation of structural perfection of hydrogen-terminated Si(111) surface

Fahd Bensliman, Mohammed Aggour, Ahmed Ennaoui, Michio Matsumura

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this study, we measured the electrochemical oxidation currents on n-Si(111) surfaces at a potential near the flat-band potential. The current became small when the surface was treated with oxygen-free water, which is effective for flattening the Si(111) surface, before the electrochemical measurement. This current was attributed to the oxidation of Si atoms on step and kink sites, and was concluded to be a good measure of the structural perfection of Si(111) surfaces.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume39
Issue number12 A
Publication statusPublished - Dec 2000
Externally publishedYes

Fingerprint

Hydrogen
evaluation
hydrogen
electrochemical oxidation
Electrochemical oxidation
flattening
Atoms
Oxidation
oxidation
Oxygen
oxygen
water
atoms
Water

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrochemical method for evaluation of structural perfection of hydrogen-terminated Si(111) surface. / Bensliman, Fahd; Aggour, Mohammed; Ennaoui, Ahmed; Matsumura, Michio.

In: Japanese Journal of Applied Physics, Vol. 39, No. 12 A, 12.2000.

Research output: Contribution to journalArticle

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