In this study, we measured the electrochemical oxidation currents on n-Si(111) surfaces at a potential near the flat-band potential. The current became small when the surface was treated with oxygen-free water, which is effective for flattening the Si(111) surface, before the electrochemical measurement. This current was attributed to the oxidation of Si atoms on step and kink sites, and was concluded to be a good measure of the structural perfection of Si(111) surfaces.
|Journal||Japanese journal of applied physics|
|Issue number||12 A|
|Publication status||Published - 1 Jan 2000|
ASJC Scopus subject areas
- Physics and Astronomy(all)