Electrochemical deposition of bulk MoS2 thin films for photovoltaic applications

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Layered transition metal dichalcogenides (TMDs) materials have shown high potential in many optoelectronic and photovoltaic applications due to their intriguing semiconducting properties. Most noticeably, the layered molybdenum disulfide (MoS2) has drawn much attention because of its unique layer-dependent band gap tunability and high electron mobility. A facile non-vacuum electrodeposition approach is used to deposit bulk MoS2 films onto FTO substrate immersed in an aqueous precursor solution of molybdenum and sulfur. The as-deposited and post-treated films are studied using X-ray diffraction, electron microscopy equipped with energy-dispersive x-ray spectroscopy, light absorption measurement, and X-ray photoelectron spectroscopy. Although the obtained gap energy values, 1.3–1.4 eV, of bulk MoS2 are indirect, the measured light absorption characteristic is high, especially above 1.7 eV. Also, electrochemical impedance spectroscopy studies of the films show that carrier concentration in higher than 1015 cm−3.

Original languageEnglish
Pages (from-to)165-174
Number of pages10
JournalSolar Energy Materials and Solar Cells
Volume186
DOIs
Publication statusPublished - 1 Nov 2018

Fingerprint

Thin films
Light absorption
Molybdenum
Energy gap
Electron mobility
Electrochemical impedance spectroscopy
Sulfur
Electrodeposition
Optoelectronic devices
Electron microscopy
Transition metals
Carrier concentration
Deposits
X ray photoelectron spectroscopy
Spectroscopy
X ray diffraction
X rays
Substrates
molybdenum disulfide

Keywords

  • Atomic Force Microscopy
  • Cyclic voltammetry
  • Electrodeposition
  • Molybdenum disulfide (MoS)
  • Mott-Schottky analyses
  • Photovoltaics
  • Transition metal dichalcogenides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this

Electrochemical deposition of bulk MoS2 thin films for photovoltaic applications. / Hossain, Md Anower; Merzougui, Belabbes; Alharbi, Fahhad; Tabet, Nouar.

In: Solar Energy Materials and Solar Cells, Vol. 186, 01.11.2018, p. 165-174.

Research output: Contribution to journalArticle

@article{d5149336489a4baba989d20b3ac25a74,
title = "Electrochemical deposition of bulk MoS2 thin films for photovoltaic applications",
abstract = "Layered transition metal dichalcogenides (TMDs) materials have shown high potential in many optoelectronic and photovoltaic applications due to their intriguing semiconducting properties. Most noticeably, the layered molybdenum disulfide (MoS2) has drawn much attention because of its unique layer-dependent band gap tunability and high electron mobility. A facile non-vacuum electrodeposition approach is used to deposit bulk MoS2 films onto FTO substrate immersed in an aqueous precursor solution of molybdenum and sulfur. The as-deposited and post-treated films are studied using X-ray diffraction, electron microscopy equipped with energy-dispersive x-ray spectroscopy, light absorption measurement, and X-ray photoelectron spectroscopy. Although the obtained gap energy values, 1.3–1.4 eV, of bulk MoS2 are indirect, the measured light absorption characteristic is high, especially above 1.7 eV. Also, electrochemical impedance spectroscopy studies of the films show that carrier concentration in higher than 1015 cm−3.",
keywords = "Atomic Force Microscopy, Cyclic voltammetry, Electrodeposition, Molybdenum disulfide (MoS), Mott-Schottky analyses, Photovoltaics, Transition metal dichalcogenides",
author = "Hossain, {Md Anower} and Belabbes Merzougui and Fahhad Alharbi and Nouar Tabet",
year = "2018",
month = "11",
day = "1",
doi = "10.1016/j.solmat.2018.06.026",
language = "English",
volume = "186",
pages = "165--174",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Electrochemical deposition of bulk MoS2 thin films for photovoltaic applications

AU - Hossain, Md Anower

AU - Merzougui, Belabbes

AU - Alharbi, Fahhad

AU - Tabet, Nouar

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Layered transition metal dichalcogenides (TMDs) materials have shown high potential in many optoelectronic and photovoltaic applications due to their intriguing semiconducting properties. Most noticeably, the layered molybdenum disulfide (MoS2) has drawn much attention because of its unique layer-dependent band gap tunability and high electron mobility. A facile non-vacuum electrodeposition approach is used to deposit bulk MoS2 films onto FTO substrate immersed in an aqueous precursor solution of molybdenum and sulfur. The as-deposited and post-treated films are studied using X-ray diffraction, electron microscopy equipped with energy-dispersive x-ray spectroscopy, light absorption measurement, and X-ray photoelectron spectroscopy. Although the obtained gap energy values, 1.3–1.4 eV, of bulk MoS2 are indirect, the measured light absorption characteristic is high, especially above 1.7 eV. Also, electrochemical impedance spectroscopy studies of the films show that carrier concentration in higher than 1015 cm−3.

AB - Layered transition metal dichalcogenides (TMDs) materials have shown high potential in many optoelectronic and photovoltaic applications due to their intriguing semiconducting properties. Most noticeably, the layered molybdenum disulfide (MoS2) has drawn much attention because of its unique layer-dependent band gap tunability and high electron mobility. A facile non-vacuum electrodeposition approach is used to deposit bulk MoS2 films onto FTO substrate immersed in an aqueous precursor solution of molybdenum and sulfur. The as-deposited and post-treated films are studied using X-ray diffraction, electron microscopy equipped with energy-dispersive x-ray spectroscopy, light absorption measurement, and X-ray photoelectron spectroscopy. Although the obtained gap energy values, 1.3–1.4 eV, of bulk MoS2 are indirect, the measured light absorption characteristic is high, especially above 1.7 eV. Also, electrochemical impedance spectroscopy studies of the films show that carrier concentration in higher than 1015 cm−3.

KW - Atomic Force Microscopy

KW - Cyclic voltammetry

KW - Electrodeposition

KW - Molybdenum disulfide (MoS)

KW - Mott-Schottky analyses

KW - Photovoltaics

KW - Transition metal dichalcogenides

UR - http://www.scopus.com/inward/record.url?scp=85049309205&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049309205&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2018.06.026

DO - 10.1016/j.solmat.2018.06.026

M3 - Article

AN - SCOPUS:85049309205

VL - 186

SP - 165

EP - 174

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

ER -