Effects of RF magnetron sputtering deposition process parameters on the properties of molybdenum thin films

P. Chelvanathan, S. A. Shahahmadi, F. Arith, K. Sobayel, M. Aktharuzzaman, K. Sopian, Fahhad Alharbi, N. Tabet, N. Amin

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

RF-sputtered molybdenum (Mo) thin films have been deposited by varying operating pressure (0.88 to 2.66 Pa at 100 W) and RF power (50 W to 125 W at 1.33 Pa). The variation in process parameters studied herein primarily alters the kinetic energy of the sputtered particle during the Mo deposition process. Microstructural properties of the resulting Mo thin films such as crystal structure, orientation, surface morphology, microstrain, dislocation density and electrical properties were characterized and presented in this paper. The variation in the aforesaid growth parameters induced different growth rates in the range of 3.84–12.43 nm/min and subsequently Mo films with varying thickness in the range of 0.7–1.7 μm. All Mo films exhibited preferred crystallographic orientation of (110). Lowest operating pressure (0.88 Pa) resulted in Mo film with compressive stress and subsequently peeled off due poor adhesiveness on soda lime glass (SLG) substrates. The resistivity of Mo films was found to be in the range of 40–800 μΩ·cm and dependent on the thickness and structural imperfections such as microstrain and dislocation density.

Original languageEnglish
Pages (from-to)213-219
Number of pages7
JournalThin Solid Films
Volume638
DOIs
Publication statusPublished - 30 Sep 2017

Fingerprint

Molybdenum
Magnetron sputtering
molybdenum
magnetron sputtering
Thin films
thin films
calcium oxides
Dislocations (crystals)
Compressive stress
Lime
Kinetic energy
Crystal orientation
Surface morphology
Electric properties
Crystal structure
kinetic energy
electrical properties
Glass
Defects
electrical resistivity

Keywords

  • Electrical properties
  • Molybdenum
  • Physical properties
  • Radio-frequency sputtering
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Chelvanathan, P., Shahahmadi, S. A., Arith, F., Sobayel, K., Aktharuzzaman, M., Sopian, K., ... Amin, N. (2017). Effects of RF magnetron sputtering deposition process parameters on the properties of molybdenum thin films. Thin Solid Films, 638, 213-219. https://doi.org/10.1016/j.tsf.2017.07.057

Effects of RF magnetron sputtering deposition process parameters on the properties of molybdenum thin films. / Chelvanathan, P.; Shahahmadi, S. A.; Arith, F.; Sobayel, K.; Aktharuzzaman, M.; Sopian, K.; Alharbi, Fahhad; Tabet, N.; Amin, N.

In: Thin Solid Films, Vol. 638, 30.09.2017, p. 213-219.

Research output: Contribution to journalArticle

Chelvanathan, P, Shahahmadi, SA, Arith, F, Sobayel, K, Aktharuzzaman, M, Sopian, K, Alharbi, F, Tabet, N & Amin, N 2017, 'Effects of RF magnetron sputtering deposition process parameters on the properties of molybdenum thin films', Thin Solid Films, vol. 638, pp. 213-219. https://doi.org/10.1016/j.tsf.2017.07.057
Chelvanathan P, Shahahmadi SA, Arith F, Sobayel K, Aktharuzzaman M, Sopian K et al. Effects of RF magnetron sputtering deposition process parameters on the properties of molybdenum thin films. Thin Solid Films. 2017 Sep 30;638:213-219. https://doi.org/10.1016/j.tsf.2017.07.057
Chelvanathan, P. ; Shahahmadi, S. A. ; Arith, F. ; Sobayel, K. ; Aktharuzzaman, M. ; Sopian, K. ; Alharbi, Fahhad ; Tabet, N. ; Amin, N. / Effects of RF magnetron sputtering deposition process parameters on the properties of molybdenum thin films. In: Thin Solid Films. 2017 ; Vol. 638. pp. 213-219.
@article{74424ab9e1ee4eff970a1170d1dcfb9f,
title = "Effects of RF magnetron sputtering deposition process parameters on the properties of molybdenum thin films",
abstract = "RF-sputtered molybdenum (Mo) thin films have been deposited by varying operating pressure (0.88 to 2.66 Pa at 100 W) and RF power (50 W to 125 W at 1.33 Pa). The variation in process parameters studied herein primarily alters the kinetic energy of the sputtered particle during the Mo deposition process. Microstructural properties of the resulting Mo thin films such as crystal structure, orientation, surface morphology, microstrain, dislocation density and electrical properties were characterized and presented in this paper. The variation in the aforesaid growth parameters induced different growth rates in the range of 3.84–12.43 nm/min and subsequently Mo films with varying thickness in the range of 0.7–1.7 μm. All Mo films exhibited preferred crystallographic orientation of (110). Lowest operating pressure (0.88 Pa) resulted in Mo film with compressive stress and subsequently peeled off due poor adhesiveness on soda lime glass (SLG) substrates. The resistivity of Mo films was found to be in the range of 40–800 μΩ·cm and dependent on the thickness and structural imperfections such as microstrain and dislocation density.",
keywords = "Electrical properties, Molybdenum, Physical properties, Radio-frequency sputtering, Thin films",
author = "P. Chelvanathan and Shahahmadi, {S. A.} and F. Arith and K. Sobayel and M. Aktharuzzaman and K. Sopian and Fahhad Alharbi and N. Tabet and N. Amin",
year = "2017",
month = "9",
day = "30",
doi = "10.1016/j.tsf.2017.07.057",
language = "English",
volume = "638",
pages = "213--219",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of RF magnetron sputtering deposition process parameters on the properties of molybdenum thin films

AU - Chelvanathan, P.

AU - Shahahmadi, S. A.

AU - Arith, F.

AU - Sobayel, K.

AU - Aktharuzzaman, M.

AU - Sopian, K.

AU - Alharbi, Fahhad

AU - Tabet, N.

AU - Amin, N.

PY - 2017/9/30

Y1 - 2017/9/30

N2 - RF-sputtered molybdenum (Mo) thin films have been deposited by varying operating pressure (0.88 to 2.66 Pa at 100 W) and RF power (50 W to 125 W at 1.33 Pa). The variation in process parameters studied herein primarily alters the kinetic energy of the sputtered particle during the Mo deposition process. Microstructural properties of the resulting Mo thin films such as crystal structure, orientation, surface morphology, microstrain, dislocation density and electrical properties were characterized and presented in this paper. The variation in the aforesaid growth parameters induced different growth rates in the range of 3.84–12.43 nm/min and subsequently Mo films with varying thickness in the range of 0.7–1.7 μm. All Mo films exhibited preferred crystallographic orientation of (110). Lowest operating pressure (0.88 Pa) resulted in Mo film with compressive stress and subsequently peeled off due poor adhesiveness on soda lime glass (SLG) substrates. The resistivity of Mo films was found to be in the range of 40–800 μΩ·cm and dependent on the thickness and structural imperfections such as microstrain and dislocation density.

AB - RF-sputtered molybdenum (Mo) thin films have been deposited by varying operating pressure (0.88 to 2.66 Pa at 100 W) and RF power (50 W to 125 W at 1.33 Pa). The variation in process parameters studied herein primarily alters the kinetic energy of the sputtered particle during the Mo deposition process. Microstructural properties of the resulting Mo thin films such as crystal structure, orientation, surface morphology, microstrain, dislocation density and electrical properties were characterized and presented in this paper. The variation in the aforesaid growth parameters induced different growth rates in the range of 3.84–12.43 nm/min and subsequently Mo films with varying thickness in the range of 0.7–1.7 μm. All Mo films exhibited preferred crystallographic orientation of (110). Lowest operating pressure (0.88 Pa) resulted in Mo film with compressive stress and subsequently peeled off due poor adhesiveness on soda lime glass (SLG) substrates. The resistivity of Mo films was found to be in the range of 40–800 μΩ·cm and dependent on the thickness and structural imperfections such as microstrain and dislocation density.

KW - Electrical properties

KW - Molybdenum

KW - Physical properties

KW - Radio-frequency sputtering

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85026361630&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85026361630&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2017.07.057

DO - 10.1016/j.tsf.2017.07.057

M3 - Article

VL - 638

SP - 213

EP - 219

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -