Effects of hydrogen on the radiation response of bipolar transistors

Experiment and modeling

I. G. Batyrev, D. Hughart, R. Durand, M. Bounasser, B. R. Tuttle, D. M. Fleetwood, R. D. Schrimpf, Sergey Rashkeev, G. W. Dunham, M. Law, S. T. Pantelides

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Reactions of ${\rm H}-{2}$ in lateral PNP BJTs are investigated through experiments and simulations. Pre-irradiation hydrogen exposure makes the devices more sensitive to ionizing radiation, which is explained through first-principles calculations and numerical simulations. Mechanisms for the cracking of hydrogen molecules and proton generation are proposed. We also suggest a mechanism of formation of border traps. When protons are trapped by oxygen vacancies right at or very near the interface, they form electrically active defects near the middle of the band gap. Activation energies of the reaction are used to construct rate equations. The rate equations are solved numerically to determine the spatial and temporal concentrations of hydrogen, holes, and protons. The calculated concentrations of interface and border traps agree well with the experimental results and help to explain the role of hydrogen in determining the total-dose response of BJTs.

Original languageEnglish
Article number4723752
Pages (from-to)3039-3045
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume55
Issue number6
DOIs
Publication statusPublished - 1 Dec 2008
Externally publishedYes

Fingerprint

Bipolar transistors
bipolar transistors
Radiation
Hydrogen
Protons
hydrogen
radiation
borders
protons
Experiments
traps
Ionizing radiation
Oxygen vacancies
ionizing radiation
Energy gap
simulation
Activation energy
Irradiation
activation energy
dosage

Keywords

  • Hydrogen soak
  • Oxygen vacancy
  • Radiation
  • Simulations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Batyrev, I. G., Hughart, D., Durand, R., Bounasser, M., Tuttle, B. R., Fleetwood, D. M., ... Pantelides, S. T. (2008). Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling. IEEE Transactions on Nuclear Science, 55(6), 3039-3045. [4723752]. https://doi.org/10.1109/TNS.2008.2009353

Effects of hydrogen on the radiation response of bipolar transistors : Experiment and modeling. / Batyrev, I. G.; Hughart, D.; Durand, R.; Bounasser, M.; Tuttle, B. R.; Fleetwood, D. M.; Schrimpf, R. D.; Rashkeev, Sergey; Dunham, G. W.; Law, M.; Pantelides, S. T.

In: IEEE Transactions on Nuclear Science, Vol. 55, No. 6, 4723752, 01.12.2008, p. 3039-3045.

Research output: Contribution to journalArticle

Batyrev, IG, Hughart, D, Durand, R, Bounasser, M, Tuttle, BR, Fleetwood, DM, Schrimpf, RD, Rashkeev, S, Dunham, GW, Law, M & Pantelides, ST 2008, 'Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling', IEEE Transactions on Nuclear Science, vol. 55, no. 6, 4723752, pp. 3039-3045. https://doi.org/10.1109/TNS.2008.2009353
Batyrev IG, Hughart D, Durand R, Bounasser M, Tuttle BR, Fleetwood DM et al. Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling. IEEE Transactions on Nuclear Science. 2008 Dec 1;55(6):3039-3045. 4723752. https://doi.org/10.1109/TNS.2008.2009353
Batyrev, I. G. ; Hughart, D. ; Durand, R. ; Bounasser, M. ; Tuttle, B. R. ; Fleetwood, D. M. ; Schrimpf, R. D. ; Rashkeev, Sergey ; Dunham, G. W. ; Law, M. ; Pantelides, S. T. / Effects of hydrogen on the radiation response of bipolar transistors : Experiment and modeling. In: IEEE Transactions on Nuclear Science. 2008 ; Vol. 55, No. 6. pp. 3039-3045.
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