Effects of hydrogen motion on interface trap formation and annealing

Sergey Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

We combine first-principles calculations and statistical modeling of hydrogen motion to investigate interface trap formation and post-irradiation annealing processes in the Si-SiO2 system. The dependence of the interface trap density on the temperature and bias voltage is explained on the basis of analytical modeling and statistical simulations based on Monte Carlo and master equation approaches. We suggest that the interface-trap buildup and annealing dynamics are primarily controlled by processes associated with hydrogen transport toward and along the interface, hydrogen reactions with passivated and unpassivated dangling bonds, and differences in most-favorable charge states for hydrogen-related species in SiO2 and Si. The dramatic change of the interface-trap formation dynamics as a function of postirradiation annealing bias in MOS devices at a temperature of ∼150°C is explained as a result of competition between the direct depassivation of the interfacial Si-H bonds by protons and the passivation of interfacial dangling bond defects by neutral molecular hydrogen formed near the interface and in the Si. We show that the transport of different hydrogen-related species in the interfacial region and their mutual transformations are responsible for significant postirradiation accumulation of hydrogen near the interface. We also discuss how this approach and these results may be employed for further understanding of enhanced low-dose rate sensitivity (ELDRS).

Original languageEnglish
Pages (from-to)3158-3165
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume51
Issue number6 II
DOIs
Publication statusPublished - 1 Dec 2004
Externally publishedYes

Fingerprint

traps
Annealing
Hydrogen
annealing
hydrogen
Dangling bonds
MOS devices
passivity
Bias voltage
Passivation
Protons
Irradiation
dosage
irradiation
temperature
protons
defects
Temperature
Defects
electric potential

Keywords

  • Interface phenomena
  • Monte Carlo methods
  • MOS capacitors
  • Passivation
  • Radiation effects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Effects of hydrogen motion on interface trap formation and annealing. / Rashkeev, Sergey; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.

In: IEEE Transactions on Nuclear Science, Vol. 51, No. 6 II, 01.12.2004, p. 3158-3165.

Research output: Contribution to journalArticle

Rashkeev, Sergey ; Fleetwood, D. M. ; Schrimpf, R. D. ; Pantelides, S. T. / Effects of hydrogen motion on interface trap formation and annealing. In: IEEE Transactions on Nuclear Science. 2004 ; Vol. 51, No. 6 II. pp. 3158-3165.
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