Effects of annealing on copper substrate surface morphology and graphene growth by chemical vapor deposition

Ahmed Ibrahim, Sultan Akhtar, Muataz Atieh, Rohit Karnik, Tahar Laoui

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Understanding the mechanism of graphene synthesis by chemical vapor deposition and the effect of process parameters is critical for production of high-quality graphene. In the present work, we investigated the effect of H<inf>2</inf> concentration during annealing on evolution of Cu surface morphology, and on deposited graphene characteristics. Our results revealed that H<inf>2</inf> had a smoothening effect on Cu surface as its surface roughness was reduced significantly at high H<inf>2</inf> concentration along with the formation of surface facets, dents and nanometer-sized particles. Furthermore, H<inf>2</inf> content influenced the graphene morphology and its quality. A low H<inf>2</inf> concentration (0% and 2.5%) during annealing promoted uniform and good quality bilayer graphene. In contrast, a high concentration of H<inf>2</inf> (20% and 50%) resulted in multilayer, non-uniform and defective graphene. Interestingly, the annealed Cu surface morphology differed considerably from that obtained after deposition of graphene, indicating that graphene deposition has its own impact on Cu surface.

Original languageEnglish
Pages (from-to)369-377
Number of pages9
JournalCarbon
Volume94
DOIs
Publication statusPublished - 29 Aug 2015

Fingerprint

Graphite
Graphene
Surface morphology
Copper
Chemical vapor deposition
Annealing
Substrates
Multilayers
Surface roughness

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Effects of annealing on copper substrate surface morphology and graphene growth by chemical vapor deposition. / Ibrahim, Ahmed; Akhtar, Sultan; Atieh, Muataz; Karnik, Rohit; Laoui, Tahar.

In: Carbon, Vol. 94, 29.08.2015, p. 369-377.

Research output: Contribution to journalArticle

Ibrahim, Ahmed ; Akhtar, Sultan ; Atieh, Muataz ; Karnik, Rohit ; Laoui, Tahar. / Effects of annealing on copper substrate surface morphology and graphene growth by chemical vapor deposition. In: Carbon. 2015 ; Vol. 94. pp. 369-377.
@article{be5a6313151747c3b86abfafca517c86,
title = "Effects of annealing on copper substrate surface morphology and graphene growth by chemical vapor deposition",
abstract = "Understanding the mechanism of graphene synthesis by chemical vapor deposition and the effect of process parameters is critical for production of high-quality graphene. In the present work, we investigated the effect of H2 concentration during annealing on evolution of Cu surface morphology, and on deposited graphene characteristics. Our results revealed that H2 had a smoothening effect on Cu surface as its surface roughness was reduced significantly at high H2 concentration along with the formation of surface facets, dents and nanometer-sized particles. Furthermore, H2 content influenced the graphene morphology and its quality. A low H2 concentration (0{\%} and 2.5{\%}) during annealing promoted uniform and good quality bilayer graphene. In contrast, a high concentration of H2 (20{\%} and 50{\%}) resulted in multilayer, non-uniform and defective graphene. Interestingly, the annealed Cu surface morphology differed considerably from that obtained after deposition of graphene, indicating that graphene deposition has its own impact on Cu surface.",
author = "Ahmed Ibrahim and Sultan Akhtar and Muataz Atieh and Rohit Karnik and Tahar Laoui",
year = "2015",
month = "8",
day = "29",
doi = "10.1016/j.carbon.2015.06.067",
language = "English",
volume = "94",
pages = "369--377",
journal = "Carbon",
issn = "0008-6223",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Effects of annealing on copper substrate surface morphology and graphene growth by chemical vapor deposition

AU - Ibrahim, Ahmed

AU - Akhtar, Sultan

AU - Atieh, Muataz

AU - Karnik, Rohit

AU - Laoui, Tahar

PY - 2015/8/29

Y1 - 2015/8/29

N2 - Understanding the mechanism of graphene synthesis by chemical vapor deposition and the effect of process parameters is critical for production of high-quality graphene. In the present work, we investigated the effect of H2 concentration during annealing on evolution of Cu surface morphology, and on deposited graphene characteristics. Our results revealed that H2 had a smoothening effect on Cu surface as its surface roughness was reduced significantly at high H2 concentration along with the formation of surface facets, dents and nanometer-sized particles. Furthermore, H2 content influenced the graphene morphology and its quality. A low H2 concentration (0% and 2.5%) during annealing promoted uniform and good quality bilayer graphene. In contrast, a high concentration of H2 (20% and 50%) resulted in multilayer, non-uniform and defective graphene. Interestingly, the annealed Cu surface morphology differed considerably from that obtained after deposition of graphene, indicating that graphene deposition has its own impact on Cu surface.

AB - Understanding the mechanism of graphene synthesis by chemical vapor deposition and the effect of process parameters is critical for production of high-quality graphene. In the present work, we investigated the effect of H2 concentration during annealing on evolution of Cu surface morphology, and on deposited graphene characteristics. Our results revealed that H2 had a smoothening effect on Cu surface as its surface roughness was reduced significantly at high H2 concentration along with the formation of surface facets, dents and nanometer-sized particles. Furthermore, H2 content influenced the graphene morphology and its quality. A low H2 concentration (0% and 2.5%) during annealing promoted uniform and good quality bilayer graphene. In contrast, a high concentration of H2 (20% and 50%) resulted in multilayer, non-uniform and defective graphene. Interestingly, the annealed Cu surface morphology differed considerably from that obtained after deposition of graphene, indicating that graphene deposition has its own impact on Cu surface.

UR - http://www.scopus.com/inward/record.url?scp=84940366720&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940366720&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2015.06.067

DO - 10.1016/j.carbon.2015.06.067

M3 - Article

AN - SCOPUS:84940366720

VL - 94

SP - 369

EP - 377

JO - Carbon

JF - Carbon

SN - 0008-6223

ER -