Effect of the chemical composition of co-sputtered Zn(O,S) buffer layers on Cu(In,Ga)Se2 solar cell performance

Marie Buffiere, S. Harel, C. Guillot-Deudon, L. Arzel, N. Barreau, J. Kessler

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

High-efficiency Cu(In,Ga)Se2 (CIGSe) solar cells generally require a CdS buffer layer formed by chemical bath deposition (CBD). However, the incompatibility of this process with inline vacuum-based production methods is a matter of concern. In this contribution, ZnO1-xSx thin films synthesized by RF co-sputtering of ZnO and ZnS targets in a confocal configuration are studied as a buffer layer in CIGSe solar cells. It was found that the sulfur content x can be easily tuned by controlling the power applied to the ZnO and ZnS targets. The band structure of the Zn(O,S) compound as a function of the sulfur content was measured by combining X-ray photoelectron spectroscopy and optical analysis techniques and found to follow the trends described in the literature. CIGSe solar cells using sputtered Zn(O,S) buffer layers with different sulfur contents were fabricated. The variation of the electrical parameters of the devices as a function the x ratio was attributed to the evolution of the conduction-band offset (CBO) at the CIGSe/ZnO1-xSx interface, as confirmed by means of SCAPS numerical simulations. However, even with an optimized band alignment between the two materials, relatively low V∞ values were obtained, likely due to defect assisted interface recombination at the buffer/window layer interface.

Original languageEnglish
Pages (from-to)282-290
Number of pages9
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume212
Issue number2
DOIs
Publication statusPublished - 1 Jan 2015

Fingerprint

Buffer layers
Sulfur
Solar cells
chemical composition
buffers
solar cells
sulfur
Chemical analysis
Conduction bands
production engineering
Band structure
incompatibility
Interfaces (computer)
Sputtering
Buffers
X ray photoelectron spectroscopy
Vacuum
baths
Thin films
Defects

Keywords

  • Band alignment
  • Co-sputtering
  • CU(In
  • Ga)Se
  • Interfaces
  • S)
  • Thin films
  • Zn(O

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Effect of the chemical composition of co-sputtered Zn(O,S) buffer layers on Cu(In,Ga)Se2 solar cell performance. / Buffiere, Marie; Harel, S.; Guillot-Deudon, C.; Arzel, L.; Barreau, N.; Kessler, J.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 212, No. 2, 01.01.2015, p. 282-290.

Research output: Contribution to journalArticle

@article{ac4d41aee5a040acbcb3af6b514b91e7,
title = "Effect of the chemical composition of co-sputtered Zn(O,S) buffer layers on Cu(In,Ga)Se2 solar cell performance",
abstract = "High-efficiency Cu(In,Ga)Se2 (CIGSe) solar cells generally require a CdS buffer layer formed by chemical bath deposition (CBD). However, the incompatibility of this process with inline vacuum-based production methods is a matter of concern. In this contribution, ZnO1-xSx thin films synthesized by RF co-sputtering of ZnO and ZnS targets in a confocal configuration are studied as a buffer layer in CIGSe solar cells. It was found that the sulfur content x can be easily tuned by controlling the power applied to the ZnO and ZnS targets. The band structure of the Zn(O,S) compound as a function of the sulfur content was measured by combining X-ray photoelectron spectroscopy and optical analysis techniques and found to follow the trends described in the literature. CIGSe solar cells using sputtered Zn(O,S) buffer layers with different sulfur contents were fabricated. The variation of the electrical parameters of the devices as a function the x ratio was attributed to the evolution of the conduction-band offset (CBO) at the CIGSe/ZnO1-xSx interface, as confirmed by means of SCAPS numerical simulations. However, even with an optimized band alignment between the two materials, relatively low V∞ values were obtained, likely due to defect assisted interface recombination at the buffer/window layer interface.",
keywords = "Band alignment, Co-sputtering, CU(In, Ga)Se, Interfaces, S), Thin films, Zn(O",
author = "Marie Buffiere and S. Harel and C. Guillot-Deudon and L. Arzel and N. Barreau and J. Kessler",
year = "2015",
month = "1",
day = "1",
doi = "10.1002/pssa.201431388",
language = "English",
volume = "212",
pages = "282--290",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "2",

}

TY - JOUR

T1 - Effect of the chemical composition of co-sputtered Zn(O,S) buffer layers on Cu(In,Ga)Se2 solar cell performance

AU - Buffiere, Marie

AU - Harel, S.

AU - Guillot-Deudon, C.

AU - Arzel, L.

AU - Barreau, N.

AU - Kessler, J.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - High-efficiency Cu(In,Ga)Se2 (CIGSe) solar cells generally require a CdS buffer layer formed by chemical bath deposition (CBD). However, the incompatibility of this process with inline vacuum-based production methods is a matter of concern. In this contribution, ZnO1-xSx thin films synthesized by RF co-sputtering of ZnO and ZnS targets in a confocal configuration are studied as a buffer layer in CIGSe solar cells. It was found that the sulfur content x can be easily tuned by controlling the power applied to the ZnO and ZnS targets. The band structure of the Zn(O,S) compound as a function of the sulfur content was measured by combining X-ray photoelectron spectroscopy and optical analysis techniques and found to follow the trends described in the literature. CIGSe solar cells using sputtered Zn(O,S) buffer layers with different sulfur contents were fabricated. The variation of the electrical parameters of the devices as a function the x ratio was attributed to the evolution of the conduction-band offset (CBO) at the CIGSe/ZnO1-xSx interface, as confirmed by means of SCAPS numerical simulations. However, even with an optimized band alignment between the two materials, relatively low V∞ values were obtained, likely due to defect assisted interface recombination at the buffer/window layer interface.

AB - High-efficiency Cu(In,Ga)Se2 (CIGSe) solar cells generally require a CdS buffer layer formed by chemical bath deposition (CBD). However, the incompatibility of this process with inline vacuum-based production methods is a matter of concern. In this contribution, ZnO1-xSx thin films synthesized by RF co-sputtering of ZnO and ZnS targets in a confocal configuration are studied as a buffer layer in CIGSe solar cells. It was found that the sulfur content x can be easily tuned by controlling the power applied to the ZnO and ZnS targets. The band structure of the Zn(O,S) compound as a function of the sulfur content was measured by combining X-ray photoelectron spectroscopy and optical analysis techniques and found to follow the trends described in the literature. CIGSe solar cells using sputtered Zn(O,S) buffer layers with different sulfur contents were fabricated. The variation of the electrical parameters of the devices as a function the x ratio was attributed to the evolution of the conduction-band offset (CBO) at the CIGSe/ZnO1-xSx interface, as confirmed by means of SCAPS numerical simulations. However, even with an optimized band alignment between the two materials, relatively low V∞ values were obtained, likely due to defect assisted interface recombination at the buffer/window layer interface.

KW - Band alignment

KW - Co-sputtering

KW - CU(In

KW - Ga)Se

KW - Interfaces

KW - S)

KW - Thin films

KW - Zn(O

UR - http://www.scopus.com/inward/record.url?scp=85027957169&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027957169&partnerID=8YFLogxK

U2 - 10.1002/pssa.201431388

DO - 10.1002/pssa.201431388

M3 - Article

AN - SCOPUS:85027957169

VL - 212

SP - 282

EP - 290

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 2

ER -