Effect of tantalum addition on microstructure and optical properties of TiN thin films

O. Bourbia, S. Achour, N. Tabet, M. Parlinska, A. Harabi

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Titanium nitride thin films were deposited by direct current magnetron sputtering with various tantalum (Ta) concentrations (2, 4 and 8 at.%). The films were characterized using UV/VIS spectrophotometer. Atomic force microscopy (AFM), high resolution transmission electron microscope (HRTEM) were used to observe the microstructure and X-ray photoelectron spectroscopy was used to investigate the core level and the valence band of the films. It was found that the film with 2 at.% Ta is more reflective in the infrared range and more transparent in the visible region (selective behavior). The AFM showed smooth nanostructured surface for the film without Ta addition. It was found that the films with 2 at.% Ta presented relatively coarser grains with larger roughness and the reflectance are not controlled by the surface morphology. Also, this film presented higher electrical conductivity. HRTEM analysis showed that 2 at.% Ta addition gave rise to well crystallized films with elongated nanocrystallites in comparison with the films having 0, 4 and 8 at.% Ta contents.

Original languageEnglish
Pages (from-to)6758-6764
Number of pages7
JournalThin Solid Films
Volume515
Issue number17
DOIs
Publication statusPublished - 1 Jun 2007

Keywords

  • Reflectance
  • Sputtering
  • Ta
  • TiN
  • Valence band

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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