Effect of oxygen ion implantation in gallium nitride

W. Jiang, W. J. Weber, S. Thevuthasan, G. J. Exarhos, B. J. Bozlee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

Epitaxial single crystal GaN films (2.0 μm thick) were implanted 60° off the 〈0001〉 surface normal with 600 keV O + ions at 190 or 210 K over a range of ion fluences from 4.8×10 17 to 5.0×10 20 ions/m 2. The implantation damage, as determined by in-situ Rutherford Backscattering Spectrometry in a 〈0001〉 channeling geometry (RBS/C), ranged from dilute defects up to the formation of a disorder saturation state that was not fully amorphous. The relative disorder on the Ga sublattice exhibited a sigmoidal dependence on ion fluence. Results show that GaN crystals are extremely resistant to the ion implantation damage as compared to other ceramic materials like SiC. An asymmetric shape in the angular scan curve around the 〈0001〉 axis, which might be associated with the Ga lattice distortion in the crystal structure, was observed for the as-irradiated material to the highest ion fluence (5.0×10 20 O +/m 2) at 210 K. Comparisons of Ga disorder depth-profiles from the experiment and SRIM97 simulations suggest that the damage peaks shift to greater depths at the low irradiation temperature (210 K). Significant recovery of these defects was not observed in the isochronal annealing steps (20-min) up to 970 K.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Volume537
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA
Duration: 30 Nov 19984 Dec 1998

Other

OtherProceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys'
CityBoston, MA, USA
Period30/11/984/12/98

Fingerprint

Gallium nitride
Ion implantation
Ions
Oxygen
Defects
Rutherford backscattering spectroscopy
Ceramic materials
Crystal lattices
Spectrometry
Crystal structure
gallium nitride
Irradiation
Single crystals
Annealing
Recovery
Crystals
Geometry
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jiang, W., Weber, W. J., Thevuthasan, S., Exarhos, G. J., & Bozlee, B. J. (1999). Effect of oxygen ion implantation in gallium nitride. In Materials Research Society Symposium - Proceedings (Vol. 537). Materials Research Society.

Effect of oxygen ion implantation in gallium nitride. / Jiang, W.; Weber, W. J.; Thevuthasan, S.; Exarhos, G. J.; Bozlee, B. J.

Materials Research Society Symposium - Proceedings. Vol. 537 Materials Research Society, 1999.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jiang, W, Weber, WJ, Thevuthasan, S, Exarhos, GJ & Bozlee, BJ 1999, Effect of oxygen ion implantation in gallium nitride. in Materials Research Society Symposium - Proceedings. vol. 537, Materials Research Society, Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys', Boston, MA, USA, 30/11/98.
Jiang W, Weber WJ, Thevuthasan S, Exarhos GJ, Bozlee BJ. Effect of oxygen ion implantation in gallium nitride. In Materials Research Society Symposium - Proceedings. Vol. 537. Materials Research Society. 1999
Jiang, W. ; Weber, W. J. ; Thevuthasan, S. ; Exarhos, G. J. ; Bozlee, B. J. / Effect of oxygen ion implantation in gallium nitride. Materials Research Society Symposium - Proceedings. Vol. 537 Materials Research Society, 1999.
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