Effect of oxygen ion implantation in gallium nitride

W. Jiang, W. J. Weber, S. Thevuthasan, G. J. Exarhos, B. J. Bozlee

    Research output: Contribution to journalConference article


    Epitaxial single crystal GaN films (2.0 μm thick) were implanted 60° off the 〈0001〉 surface normal with 600 keV O+ ions at 190 or 210 K over a range of ion fluences from 4.8×1017 to 5.0×1020 ions/m2. The implantation damage, as determined by in-situ Rutherford Backscattering Spectrometry in a 〈0001〉 channeling geometry (RBS/C), ranged from dilute defects up to the formation of a disorder saturation state that was not fully amorphous. The relative disorder on the Ga sublattice exhibited a sigmoidal dependence on ion fluence. Results show that GaN crystals are extremely resistant to the ion implantation damage as compared to other ceramic materials like SiC. An asymmetric shape in the angular scan curve around the 〈0001〉 axis, which might be associated with the Ga lattice distortion in the crystal structure, was observed for the as-irradiated material to the highest ion fluence (5.0×1020 O+/m2) at 210 K. Comparisons of Ga disorder depth-profiles from the experiment and SRIM97 simulations suggest that the damage peaks shift to greater depths at the low irradiation temperature (210 K). Significant recovery of these defects was not observed in the isochronal annealing steps (20-min) up to 970 K.

    Original languageEnglish
    Pages (from-to)G6.15
    JournalMaterials Research Society Symposium - Proceedings
    Publication statusPublished - 1 Dec 1999
    EventProceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA
    Duration: 30 Nov 19984 Dec 1998


    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Jiang, W., Weber, W. J., Thevuthasan, S., Exarhos, G. J., & Bozlee, B. J. (1999). Effect of oxygen ion implantation in gallium nitride. Materials Research Society Symposium - Proceedings, 537, G6.15.