Effect of oxygen ion implantation in gallium nitride

W. Jiang, W. J. Weber, S. Thevuthasan, G. J. Exarhos, B. J. Bozlee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Epitaxial single crystal GaN films (2.0 urn thick) were implanted 60° off the 〈0001〉 surface normal with 600 keV O+ ions at 190 or 210 K over a range of ion fluences from 4.8×1017 to 5.0×1020 ions/m2. The implantation damage, as determined by in-situ Rutherford Backscattering Spectrometry in a 〈0001〉 channeling geometry (RBS/C), ranged from dilute defects up to the formation of a disorder saturation state that was not fully amorphous. The relative disorder on the Ga sublattice exhibited a sigmoidal dependence on ion fluence. Results show that GaN crystals are extremely resistant to the ion implantation damage as compared to other ceramic materials like SiC. An asymmetric shape in the angular scan curve around the 〈0001〉 axis, which might be associated with the Ga lattice distortion in the crystal structure, was observed for the asirradiated material to the highest ion fluence (5.0×1020 O+/m2) at 210 K. Comparisons of Ga disorder depth-profiles from the experiment and SRIM97 simulations suggest that the damage peaks shift to greater depths at the low irradiation temperature (210 K). Significant recovery of these defects was not observed in the isochronal annealing steps (20-min) up to 970 K.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume4
Issue numberSUPPL. 1
Publication statusPublished - 1999
Externally publishedYes

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Gallium nitride
Ion implantation
Ions
Oxygen
Defects
Rutherford backscattering spectroscopy
Ceramic materials
Crystal lattices
Spectrometry
Crystal structure
gallium nitride
Irradiation
Single crystals
Annealing
Recovery
Crystals
Geometry
Experiments

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Jiang, W., Weber, W. J., Thevuthasan, S., Exarhos, G. J., & Bozlee, B. J. (1999). Effect of oxygen ion implantation in gallium nitride. MRS Internet Journal of Nitride Semiconductor Research, 4(SUPPL. 1).

Effect of oxygen ion implantation in gallium nitride. / Jiang, W.; Weber, W. J.; Thevuthasan, S.; Exarhos, G. J.; Bozlee, B. J.

In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, No. SUPPL. 1, 1999.

Research output: Contribution to journalArticle

Jiang, W, Weber, WJ, Thevuthasan, S, Exarhos, GJ & Bozlee, BJ 1999, 'Effect of oxygen ion implantation in gallium nitride', MRS Internet Journal of Nitride Semiconductor Research, vol. 4, no. SUPPL. 1.
Jiang W, Weber WJ, Thevuthasan S, Exarhos GJ, Bozlee BJ. Effect of oxygen ion implantation in gallium nitride. MRS Internet Journal of Nitride Semiconductor Research. 1999;4(SUPPL. 1).
Jiang, W. ; Weber, W. J. ; Thevuthasan, S. ; Exarhos, G. J. ; Bozlee, B. J. / Effect of oxygen ion implantation in gallium nitride. In: MRS Internet Journal of Nitride Semiconductor Research. 1999 ; Vol. 4, No. SUPPL. 1.
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