Effect of internal surface area on the performance of ZnO In2 S3 CuSCN solar cells with extremely thin absorber

D. Kieven, T. Dittrich, Abdelhak Belaidi, J. Tornow, K. Schwarzburg, N. Allsop, M. Lux-Steiner

Research output: Contribution to journalArticle

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Abstract

Solar cells with an extremely thin light absorber were realized by wet chemical preparation on arrays of ZnO nanorods. The absorber consisted of an In2 S3 layer (∼20 nm thickness) and its interface region with a transparent CuSCN hole conductor. By changing the length of the nanorods (0-3.3 μm) and keeping the In2 S3 layer thickness constant at ∼20 nm, the short circuit current increased from about 2-10 mA cm2. A marked increase of the external quantum efficiency at longer wavelengths is attributed to light scattering and a solar energy conversion efficiency of 2.5% has been demonstrated.

Original languageEnglish
Article number153107
JournalApplied Physics Letters
Volume92
Issue number15
DOIs
Publication statusPublished - 2008
Externally publishedYes

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nanorods
absorbers
solar cells
solar energy conversion
energy conversion efficiency
short circuit currents
quantum efficiency
light scattering
conductors
preparation
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of internal surface area on the performance of ZnO In2 S3 CuSCN solar cells with extremely thin absorber. / Kieven, D.; Dittrich, T.; Belaidi, Abdelhak; Tornow, J.; Schwarzburg, K.; Allsop, N.; Lux-Steiner, M.

In: Applied Physics Letters, Vol. 92, No. 15, 153107, 2008.

Research output: Contribution to journalArticle

Kieven, D. ; Dittrich, T. ; Belaidi, Abdelhak ; Tornow, J. ; Schwarzburg, K. ; Allsop, N. ; Lux-Steiner, M. / Effect of internal surface area on the performance of ZnO In2 S3 CuSCN solar cells with extremely thin absorber. In: Applied Physics Letters. 2008 ; Vol. 92, No. 15.
@article{b29ec4cbd8ea4b909ffa553a94d6f8fd,
title = "Effect of internal surface area on the performance of ZnO In2 S3 CuSCN solar cells with extremely thin absorber",
abstract = "Solar cells with an extremely thin light absorber were realized by wet chemical preparation on arrays of ZnO nanorods. The absorber consisted of an In2 S3 layer (∼20 nm thickness) and its interface region with a transparent CuSCN hole conductor. By changing the length of the nanorods (0-3.3 μm) and keeping the In2 S3 layer thickness constant at ∼20 nm, the short circuit current increased from about 2-10 mA cm2. A marked increase of the external quantum efficiency at longer wavelengths is attributed to light scattering and a solar energy conversion efficiency of 2.5{\%} has been demonstrated.",
author = "D. Kieven and T. Dittrich and Abdelhak Belaidi and J. Tornow and K. Schwarzburg and N. Allsop and M. Lux-Steiner",
year = "2008",
doi = "10.1063/1.2909576",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Effect of internal surface area on the performance of ZnO In2 S3 CuSCN solar cells with extremely thin absorber

AU - Kieven, D.

AU - Dittrich, T.

AU - Belaidi, Abdelhak

AU - Tornow, J.

AU - Schwarzburg, K.

AU - Allsop, N.

AU - Lux-Steiner, M.

PY - 2008

Y1 - 2008

N2 - Solar cells with an extremely thin light absorber were realized by wet chemical preparation on arrays of ZnO nanorods. The absorber consisted of an In2 S3 layer (∼20 nm thickness) and its interface region with a transparent CuSCN hole conductor. By changing the length of the nanorods (0-3.3 μm) and keeping the In2 S3 layer thickness constant at ∼20 nm, the short circuit current increased from about 2-10 mA cm2. A marked increase of the external quantum efficiency at longer wavelengths is attributed to light scattering and a solar energy conversion efficiency of 2.5% has been demonstrated.

AB - Solar cells with an extremely thin light absorber were realized by wet chemical preparation on arrays of ZnO nanorods. The absorber consisted of an In2 S3 layer (∼20 nm thickness) and its interface region with a transparent CuSCN hole conductor. By changing the length of the nanorods (0-3.3 μm) and keeping the In2 S3 layer thickness constant at ∼20 nm, the short circuit current increased from about 2-10 mA cm2. A marked increase of the external quantum efficiency at longer wavelengths is attributed to light scattering and a solar energy conversion efficiency of 2.5% has been demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=42349109415&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42349109415&partnerID=8YFLogxK

U2 - 10.1063/1.2909576

DO - 10.1063/1.2909576

M3 - Article

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 153107

ER -