Effect of diameter variation on electrical characteristics of schottky barrier indium arsenide nanowire field-effect transistors

Ali Razavieh, Parsian Katal Mohseni, Kyooho Jung, Saumitra Mehrotra, Saptarshi Das, Sergey Suslov, Xiuling Li, Gerhard Klimeck, David B. Janes, Joerg Appenzeller

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The effect of diameter variation on electrical characteristics of long-channel InAs nanowire metal-oxide-semiconductor field-effect transistors is experimentally investigated. For a range of nanowire diameters, in which significant band gap changes are observed due to size quantization, the Schottky barrier heights between source/drain metal contacts and the semiconducting nanowire channel are extracted considering both thermionic emission and thermally assisted tunneling. Nanowires as small as 10 nm in diameter were used in device geometry in this context. Interestingly, while experimental and simulation data are consistent with a band gap increase for decreasing nanowire diameter, the experimentally determined Schottky barrier height is found to be around 110 meV irrespective of the nanowire diameter. These observations indicate that for nanowire devices the density of states at the direct conduction band minimum impacts the so-called branching point. Our findings are thus distinctly different from bulk-type results when metal contacts are formed on three-dimensional InAs crystals.

Original languageEnglish
Pages (from-to)6281-6287
Number of pages7
JournalACS Nano
Volume8
Issue number6
DOIs
Publication statusPublished - 24 Jun 2014
Externally publishedYes

Fingerprint

Indium arsenide
Field effect transistors
Nanowires
indium
nanowires
field effect transistors
electric contacts
Energy gap
Metals
Thermionic emission
thermionic emission
data simulation
MOSFET devices
indium arsenide
Conduction bands
metal oxide semiconductors
metals
conduction bands
Crystals
Geometry

Keywords

  • InAs
  • MOSFET
  • nanowire
  • narrow band gap
  • Schottky barrier
  • Tersoff's theory

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Effect of diameter variation on electrical characteristics of schottky barrier indium arsenide nanowire field-effect transistors. / Razavieh, Ali; Mohseni, Parsian Katal; Jung, Kyooho; Mehrotra, Saumitra; Das, Saptarshi; Suslov, Sergey; Li, Xiuling; Klimeck, Gerhard; Janes, David B.; Appenzeller, Joerg.

In: ACS Nano, Vol. 8, No. 6, 24.06.2014, p. 6281-6287.

Research output: Contribution to journalArticle

Razavieh, A, Mohseni, PK, Jung, K, Mehrotra, S, Das, S, Suslov, S, Li, X, Klimeck, G, Janes, DB & Appenzeller, J 2014, 'Effect of diameter variation on electrical characteristics of schottky barrier indium arsenide nanowire field-effect transistors', ACS Nano, vol. 8, no. 6, pp. 6281-6287. https://doi.org/10.1021/nn5017567
Razavieh, Ali ; Mohseni, Parsian Katal ; Jung, Kyooho ; Mehrotra, Saumitra ; Das, Saptarshi ; Suslov, Sergey ; Li, Xiuling ; Klimeck, Gerhard ; Janes, David B. ; Appenzeller, Joerg. / Effect of diameter variation on electrical characteristics of schottky barrier indium arsenide nanowire field-effect transistors. In: ACS Nano. 2014 ; Vol. 8, No. 6. pp. 6281-6287.
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