Effect of diameter variation on electrical characteristics of schottky barrier indium arsenide nanowire field-effect transistors

Ali Razavieh, Parsian Katal Mohseni, Kyooho Jung, Saumitra Mehrotra, Saptarshi Das, Sergey Suslov, Xiuling Li, Gerhard Klimeck, David B. Janes, Joerg Appenzeller

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20 Citations (Scopus)

Abstract

The effect of diameter variation on electrical characteristics of long-channel InAs nanowire metal-oxide-semiconductor field-effect transistors is experimentally investigated. For a range of nanowire diameters, in which significant band gap changes are observed due to size quantization, the Schottky barrier heights between source/drain metal contacts and the semiconducting nanowire channel are extracted considering both thermionic emission and thermally assisted tunneling. Nanowires as small as 10 nm in diameter were used in device geometry in this context. Interestingly, while experimental and simulation data are consistent with a band gap increase for decreasing nanowire diameter, the experimentally determined Schottky barrier height is found to be around 110 meV irrespective of the nanowire diameter. These observations indicate that for nanowire devices the density of states at the direct conduction band minimum impacts the so-called branching point. Our findings are thus distinctly different from bulk-type results when metal contacts are formed on three-dimensional InAs crystals.

Original languageEnglish
Pages (from-to)6281-6287
Number of pages7
JournalACS Nano
Volume8
Issue number6
DOIs
Publication statusPublished - 24 Jun 2014

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Keywords

  • InAs
  • MOSFET
  • Schottky barrier
  • Tersoff's theory
  • nanowire
  • narrow band gap

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Razavieh, A., Mohseni, P. K., Jung, K., Mehrotra, S., Das, S., Suslov, S., Li, X., Klimeck, G., Janes, D. B., & Appenzeller, J. (2014). Effect of diameter variation on electrical characteristics of schottky barrier indium arsenide nanowire field-effect transistors. ACS Nano, 8(6), 6281-6287. https://doi.org/10.1021/nn5017567