Dynamical properties and design analysis for nonvolatile memristor memories

Yenpo Ho, Garng M. Huang, Peng Li

Research output: Contribution to journalArticle

207 Citations (Scopus)

Abstract

Novel nonvolatile universal memory technology is essential for providing required storage for nanocomputing. As a potential contender for the next-generation memory, the recently found the missing fourth circuit element, memristor, has drawn a great deal of research interests. In this paper, by starting from basic memristor device equations, we develop a comprehensive set of properties and design equations for memristor based memories. Our analyses are specifically targeting key electrical memristor device characteristics relevant to memory operations. Using our derived properties, we investigate the design of read and write circuits and analyze important data integrity and noise-tolerance issues.

Original languageEnglish
Article number5604689
Pages (from-to)724-736
Number of pages13
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume58
Issue number4
DOIs
Publication statusPublished - 1 Jan 2011

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Keywords

  • Charge-controlled memristance
  • flux-controlled memristance
  • zero-net charge injection
  • zero-net flux injection

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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