Dual behavior of H+ at Si-SiO2 interfaces

Mobility versus trapping

Sergey Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We report first-principles calculations showing that protons in the vicinity of a Si-SiO2 interface can behave in two different ways. At an abrupt interface without suboxide bonds (Si-Si bonds at the oxide side of the interface) H+ does not become trapped but migrates laterally until it reacts with a point defect (e.g., depassivates a hydrogenated dangling bond). On the other hand, when large concentrations of suboxide bonds are present, H+ can become trapped in a deep energy minimum with a highly asymmetric energy barrier. Thus, large H+ densities first saturate suboxide bonds, and the balance can be cycled back and forth between a pair of interfaces by reversing the electric field. These results account for the experimentally observed dual behavior of protons at Si-SiO2 interfaces.

Original languageEnglish
Pages (from-to)1839-1841
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number10
DOIs
Publication statusPublished - 2 Sep 2002
Externally publishedYes

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trapping
protons
reversing
point defects
oxides
electric fields
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Dual behavior of H+ at Si-SiO2 interfaces : Mobility versus trapping. / Rashkeev, Sergey; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.

In: Applied Physics Letters, Vol. 81, No. 10, 02.09.2002, p. 1839-1841.

Research output: Contribution to journalArticle

Rashkeev, S, Fleetwood, DM, Schrimpf, RD & Pantelides, ST 2002, 'Dual behavior of H+ at Si-SiO2 interfaces: Mobility versus trapping', Applied Physics Letters, vol. 81, no. 10, pp. 1839-1841. https://doi.org/10.1063/1.1504879
Rashkeev, Sergey ; Fleetwood, D. M. ; Schrimpf, R. D. ; Pantelides, S. T. / Dual behavior of H+ at Si-SiO2 interfaces : Mobility versus trapping. In: Applied Physics Letters. 2002 ; Vol. 81, No. 10. pp. 1839-1841.
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