Dry etch patterning of LaCaMnO3 and SmCo thin films

J. J. Wang, J. R. Childress, S. J. Pearton, F. Sharifi, K. H. Dahmen, E. S. Gillman, F. J. Cadieu, R. Rani, X. R. Qian, Li Chen

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A number of different plasma chemistries have been employed for patterning of LaCaMnO3 and SmCo thin films for application in magnetic-field-biased structures based on the colossal magnetoresistive effect. For LaCaMnO3 there was no chemical enhancement in etch rate over simple Ar sputtering for Cl2, SF6, and CH4/H2 plasmas under high ion density conditions. This is expected based on the vapor pressures of the prospective etch products. For SmCo, however, etch rates up to 7000 Å min-1 were obtained in Cl2/Ar plasmas, which is an order of magnitude faster than Ar sputtering under the same experimental conditions. Smooth etched surface morphologies and anistropic sidewalls were obtained for both materials over a wide range of plasma source and chuck powers.

Original languageEnglish
Pages (from-to)2512-2516
Number of pages5
JournalJournal of the Electrochemical Society
Issue number7
Publication statusPublished - Jul 1998


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Wang, J. J., Childress, J. R., Pearton, S. J., Sharifi, F., Dahmen, K. H., Gillman, E. S., Cadieu, F. J., Rani, R., Qian, X. R., & Chen, L. (1998). Dry etch patterning of LaCaMnO3 and SmCo thin films. Journal of the Electrochemical Society, 145(7), 2512-2516. https://doi.org/10.1149/1.1838670