A number of different plasma chemistries have been employed for patterning of LaCaMnO3 and SmCo thin films for application in magnetic-field-biased structures based on the colossal magnetoresistive effect. For LaCaMnO3 there was no chemical enhancement in etch rate over simple Ar sputtering for Cl2, SF6, and CH4/H2 plasmas under high ion density conditions. This is expected based on the vapor pressures of the prospective etch products. For SmCo, however, etch rates up to 7000 Å min-1 were obtained in Cl2/Ar plasmas, which is an order of magnitude faster than Ar sputtering under the same experimental conditions. Smooth etched surface morphologies and anistropic sidewalls were obtained for both materials over a wide range of plasma source and chuck powers.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry