Dry etch patterning of LaCaMnO3 and SmCo thin films

J. J. Wang, J. R. Childress, S. J. Pearton, F. Sharifi, K. H. Dahmen, E. S. Gillman, F. J. Cadieu, R. Rani, X. R. Qian, Li Chen

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A number of different plasma chemistries have been employed for patterning of LaCaMnO3 and SmCo thin films for application in magnetic-field-biased structures based on the colossal magnetoresistive effect. For LaCaMnO3 there was no chemical enhancement in etch rate over simple Ar sputtering for Cl2, SF6, and CH4/H2 plasmas under high ion density conditions. This is expected based on the vapor pressures of the prospective etch products. For SmCo, however, etch rates up to 7000 Å min-1 were obtained in Cl2/Ar plasmas, which is an order of magnitude faster than Ar sputtering under the same experimental conditions. Smooth etched surface morphologies and anistropic sidewalls were obtained for both materials over a wide range of plasma source and chuck powers.

Original languageEnglish
Pages (from-to)2512-2516
Number of pages5
JournalJournal of the Electrochemical Society
Volume145
Issue number7
Publication statusPublished - 1 Jul 1998
Externally publishedYes

Fingerprint

Plasmas
Thin films
Sputtering
thin films
sputtering
Chucks
plasma chemistry
Plasma sources
Vapor pressure
vapor pressure
Surface morphology
Ions
Magnetic fields
augmentation
products
magnetic fields

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Wang, J. J., Childress, J. R., Pearton, S. J., Sharifi, F., Dahmen, K. H., Gillman, E. S., ... Chen, L. (1998). Dry etch patterning of LaCaMnO3 and SmCo thin films. Journal of the Electrochemical Society, 145(7), 2512-2516.

Dry etch patterning of LaCaMnO3 and SmCo thin films. / Wang, J. J.; Childress, J. R.; Pearton, S. J.; Sharifi, F.; Dahmen, K. H.; Gillman, E. S.; Cadieu, F. J.; Rani, R.; Qian, X. R.; Chen, Li.

In: Journal of the Electrochemical Society, Vol. 145, No. 7, 01.07.1998, p. 2512-2516.

Research output: Contribution to journalArticle

Wang, JJ, Childress, JR, Pearton, SJ, Sharifi, F, Dahmen, KH, Gillman, ES, Cadieu, FJ, Rani, R, Qian, XR & Chen, L 1998, 'Dry etch patterning of LaCaMnO3 and SmCo thin films', Journal of the Electrochemical Society, vol. 145, no. 7, pp. 2512-2516.
Wang JJ, Childress JR, Pearton SJ, Sharifi F, Dahmen KH, Gillman ES et al. Dry etch patterning of LaCaMnO3 and SmCo thin films. Journal of the Electrochemical Society. 1998 Jul 1;145(7):2512-2516.
Wang, J. J. ; Childress, J. R. ; Pearton, S. J. ; Sharifi, F. ; Dahmen, K. H. ; Gillman, E. S. ; Cadieu, F. J. ; Rani, R. ; Qian, X. R. ; Chen, Li. / Dry etch patterning of LaCaMnO3 and SmCo thin films. In: Journal of the Electrochemical Society. 1998 ; Vol. 145, No. 7. pp. 2512-2516.
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AU - Wang, J. J.

AU - Childress, J. R.

AU - Pearton, S. J.

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AU - Dahmen, K. H.

AU - Gillman, E. S.

AU - Cadieu, F. J.

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AU - Qian, X. R.

AU - Chen, Li

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AB - A number of different plasma chemistries have been employed for patterning of LaCaMnO3 and SmCo thin films for application in magnetic-field-biased structures based on the colossal magnetoresistive effect. For LaCaMnO3 there was no chemical enhancement in etch rate over simple Ar sputtering for Cl2, SF6, and CH4/H2 plasmas under high ion density conditions. This is expected based on the vapor pressures of the prospective etch products. For SmCo, however, etch rates up to 7000 Å min-1 were obtained in Cl2/Ar plasmas, which is an order of magnitude faster than Ar sputtering under the same experimental conditions. Smooth etched surface morphologies and anistropic sidewalls were obtained for both materials over a wide range of plasma source and chuck powers.

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