Dry and wet etch processes for NiMnSb, LaCaMnO 3 and related materials

J. Hong, J. J. Wang, E. S. Lambers, J. A. Caballero, J. R. Childress, S. J. Pearton, K. H. Dahmen, S. Von Molnar, F. J. Cadieu, F. Sharifi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A variety of plasma etching chemistries were examined for patterning NiMnSb Heusler thin films and associated Al 2O 3 barrier layers. Chemistries based on SF 6 and Cl 2 were all found to provide faster etch rates than pure Ar sputtering. In all cases the etch rates were strongly dependent on both the ion flux and ion energy. Selectivities of ≥20 for NiMnSb over Al 2O 3 were obtained in SF 6-based discharges, while selectivities ≤5 were typical in Cl 2 and CH 4/H 2 plasma chemistries. Wet etch solutions of HF/H 2O and HNO 3/H 2SO 4/H 2O were found to provide reaction-limited etching of NiMnSb that was either non-selective or selective, respectively, to Al 2O 3. In addition we have developed dry etch processes based on Cl 2/Ar at high ion densities for patterning of LaCaMnO 3 (and SmCo permanent magnet biasing films) for magnetic sensor devices. Highly anisotropic features are produced in both materials, with smooth surface morphologies. In all cases, SiO 2 or other dielectric materials must be used for masking since photoresist does not retain its geometrical integrity upon exposure to the high ion density plasma.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.J. Pearton, R.J. Shul, E. Wolfgang, F. Ren, S. Tenconi
PublisherMRS
Pages3-8
Number of pages6
Volume494
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 Fall MRS Symposium - Boston, MA, USA
Duration: 1 Dec 19974 Dec 1997

Other

OtherProceedings of the 1997 Fall MRS Symposium
CityBoston, MA, USA
Period1/12/974/12/97

Fingerprint

Ions
Magnetic sensors
Plasma etching
Plasma density
Photoresists
Permanent magnets
Surface morphology
Sputtering
Etching
Fluxes
Plasmas
Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Hong, J., Wang, J. J., Lambers, E. S., Caballero, J. A., Childress, J. R., Pearton, S. J., ... Sharifi, F. (1997). Dry and wet etch processes for NiMnSb, LaCaMnO 3 and related materials In S. J. Pearton, R. J. Shul, E. Wolfgang, F. Ren, & S. Tenconi (Eds.), Materials Research Society Symposium - Proceedings (Vol. 494, pp. 3-8). MRS.

Dry and wet etch processes for NiMnSb, LaCaMnO 3 and related materials . / Hong, J.; Wang, J. J.; Lambers, E. S.; Caballero, J. A.; Childress, J. R.; Pearton, S. J.; Dahmen, K. H.; Von Molnar, S.; Cadieu, F. J.; Sharifi, F.

Materials Research Society Symposium - Proceedings. ed. / S.J. Pearton; R.J. Shul; E. Wolfgang; F. Ren; S. Tenconi. Vol. 494 MRS, 1997. p. 3-8.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hong, J, Wang, JJ, Lambers, ES, Caballero, JA, Childress, JR, Pearton, SJ, Dahmen, KH, Von Molnar, S, Cadieu, FJ & Sharifi, F 1997, Dry and wet etch processes for NiMnSb, LaCaMnO 3 and related materials in SJ Pearton, RJ Shul, E Wolfgang, F Ren & S Tenconi (eds), Materials Research Society Symposium - Proceedings. vol. 494, MRS, pp. 3-8, Proceedings of the 1997 Fall MRS Symposium, Boston, MA, USA, 1/12/97.
Hong J, Wang JJ, Lambers ES, Caballero JA, Childress JR, Pearton SJ et al. Dry and wet etch processes for NiMnSb, LaCaMnO 3 and related materials In Pearton SJ, Shul RJ, Wolfgang E, Ren F, Tenconi S, editors, Materials Research Society Symposium - Proceedings. Vol. 494. MRS. 1997. p. 3-8
Hong, J. ; Wang, J. J. ; Lambers, E. S. ; Caballero, J. A. ; Childress, J. R. ; Pearton, S. J. ; Dahmen, K. H. ; Von Molnar, S. ; Cadieu, F. J. ; Sharifi, F. / Dry and wet etch processes for NiMnSb, LaCaMnO 3 and related materials Materials Research Society Symposium - Proceedings. editor / S.J. Pearton ; R.J. Shul ; E. Wolfgang ; F. Ren ; S. Tenconi. Vol. 494 MRS, 1997. pp. 3-8
@inproceedings{cb4ce4330921445a9c9374cd3a8c9368,
title = "Dry and wet etch processes for NiMnSb, LaCaMnO 3 and related materials",
abstract = "A variety of plasma etching chemistries were examined for patterning NiMnSb Heusler thin films and associated Al 2O 3 barrier layers. Chemistries based on SF 6 and Cl 2 were all found to provide faster etch rates than pure Ar sputtering. In all cases the etch rates were strongly dependent on both the ion flux and ion energy. Selectivities of ≥20 for NiMnSb over Al 2O 3 were obtained in SF 6-based discharges, while selectivities ≤5 were typical in Cl 2 and CH 4/H 2 plasma chemistries. Wet etch solutions of HF/H 2O and HNO 3/H 2SO 4/H 2O were found to provide reaction-limited etching of NiMnSb that was either non-selective or selective, respectively, to Al 2O 3. In addition we have developed dry etch processes based on Cl 2/Ar at high ion densities for patterning of LaCaMnO 3 (and SmCo permanent magnet biasing films) for magnetic sensor devices. Highly anisotropic features are produced in both materials, with smooth surface morphologies. In all cases, SiO 2 or other dielectric materials must be used for masking since photoresist does not retain its geometrical integrity upon exposure to the high ion density plasma.",
author = "J. Hong and Wang, {J. J.} and Lambers, {E. S.} and Caballero, {J. A.} and Childress, {J. R.} and Pearton, {S. J.} and Dahmen, {K. H.} and {Von Molnar}, S. and Cadieu, {F. J.} and F. Sharifi",
year = "1997",
language = "English",
volume = "494",
pages = "3--8",
editor = "S.J. Pearton and R.J. Shul and E. Wolfgang and F. Ren and S. Tenconi",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "MRS",

}

TY - GEN

T1 - Dry and wet etch processes for NiMnSb, LaCaMnO 3 and related materials

AU - Hong, J.

AU - Wang, J. J.

AU - Lambers, E. S.

AU - Caballero, J. A.

AU - Childress, J. R.

AU - Pearton, S. J.

AU - Dahmen, K. H.

AU - Von Molnar, S.

AU - Cadieu, F. J.

AU - Sharifi, F.

PY - 1997

Y1 - 1997

N2 - A variety of plasma etching chemistries were examined for patterning NiMnSb Heusler thin films and associated Al 2O 3 barrier layers. Chemistries based on SF 6 and Cl 2 were all found to provide faster etch rates than pure Ar sputtering. In all cases the etch rates were strongly dependent on both the ion flux and ion energy. Selectivities of ≥20 for NiMnSb over Al 2O 3 were obtained in SF 6-based discharges, while selectivities ≤5 were typical in Cl 2 and CH 4/H 2 plasma chemistries. Wet etch solutions of HF/H 2O and HNO 3/H 2SO 4/H 2O were found to provide reaction-limited etching of NiMnSb that was either non-selective or selective, respectively, to Al 2O 3. In addition we have developed dry etch processes based on Cl 2/Ar at high ion densities for patterning of LaCaMnO 3 (and SmCo permanent magnet biasing films) for magnetic sensor devices. Highly anisotropic features are produced in both materials, with smooth surface morphologies. In all cases, SiO 2 or other dielectric materials must be used for masking since photoresist does not retain its geometrical integrity upon exposure to the high ion density plasma.

AB - A variety of plasma etching chemistries were examined for patterning NiMnSb Heusler thin films and associated Al 2O 3 barrier layers. Chemistries based on SF 6 and Cl 2 were all found to provide faster etch rates than pure Ar sputtering. In all cases the etch rates were strongly dependent on both the ion flux and ion energy. Selectivities of ≥20 for NiMnSb over Al 2O 3 were obtained in SF 6-based discharges, while selectivities ≤5 were typical in Cl 2 and CH 4/H 2 plasma chemistries. Wet etch solutions of HF/H 2O and HNO 3/H 2SO 4/H 2O were found to provide reaction-limited etching of NiMnSb that was either non-selective or selective, respectively, to Al 2O 3. In addition we have developed dry etch processes based on Cl 2/Ar at high ion densities for patterning of LaCaMnO 3 (and SmCo permanent magnet biasing films) for magnetic sensor devices. Highly anisotropic features are produced in both materials, with smooth surface morphologies. In all cases, SiO 2 or other dielectric materials must be used for masking since photoresist does not retain its geometrical integrity upon exposure to the high ion density plasma.

UR - http://www.scopus.com/inward/record.url?scp=0031348771&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031348771&partnerID=8YFLogxK

M3 - Conference contribution

VL - 494

SP - 3

EP - 8

BT - Materials Research Society Symposium - Proceedings

A2 - Pearton, S.J.

A2 - Shul, R.J.

A2 - Wolfgang, E.

A2 - Ren, F.

A2 - Tenconi, S.

PB - MRS

ER -