Domain walls conductivity in hybrid organometallic perovskites and their essential role in CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf> solar cell high performance

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Abstract

The past several years has witnessed a surge of interest in organometallic trihalide perovskites, which are at the heart of the new generation of solid-state solar cells. Here, we calculated the static conductivity of charged domain walls in n- and p-doped organometallic uniaxial ferroelectric semiconductor perovskite CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf> using the Landau-Ginzburg-Devonshire (LGD) theory. We find that due to the charge carrier accumulation, the static conductivity may drastically increase at the domain wall by 3 - 4 orders of magnitude in comparison with conductivity through the bulk of the material. Also, a two-dimensional degenerated gas of highly mobile charge carriers could be formed at the wall. The high values of conductivity at domain walls and interfaces explain high efficiency in organometallic solution-processed perovskite films which contains lots of different point and extended defects. These results could suggest new routes to enhance the performance of this promising class of novel photovoltaic materials.

Original languageEnglish
Article number11467
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - 19 Jun 2015

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perovskites
domain wall
solar cells
conductivity
charge carriers
point defects
routes
solid state
defects
gases

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Cite this

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title = "Domain walls conductivity in hybrid organometallic perovskites and their essential role in CH3NH3PbI3 solar cell high performance",
abstract = "The past several years has witnessed a surge of interest in organometallic trihalide perovskites, which are at the heart of the new generation of solid-state solar cells. Here, we calculated the static conductivity of charged domain walls in n- and p-doped organometallic uniaxial ferroelectric semiconductor perovskite CH3NH3PbI3 using the Landau-Ginzburg-Devonshire (LGD) theory. We find that due to the charge carrier accumulation, the static conductivity may drastically increase at the domain wall by 3 - 4 orders of magnitude in comparison with conductivity through the bulk of the material. Also, a two-dimensional degenerated gas of highly mobile charge carriers could be formed at the wall. The high values of conductivity at domain walls and interfaces explain high efficiency in organometallic solution-processed perovskite films which contains lots of different point and extended defects. These results could suggest new routes to enhance the performance of this promising class of novel photovoltaic materials.",
author = "Sergey Rashkeev and Fadwa El-Mellouhi and Sabre Kais and Fahhad Alharbi",
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AU - Rashkeev, Sergey

AU - El-Mellouhi, Fadwa

AU - Kais, Sabre

AU - Alharbi, Fahhad

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