Distribution of oxygen vacancies and gadolinium dopants in ZrO2-CeO2 multi-layer films grown on α-Al2O3

C. M. Wang, M. H. Engelhard, S. Azad, L. V. Saraf, D. E. McCready, V. Shutthanandan, Z. Q. Yu, S. Thevuthasan, M. Watanabe, D. B. Williams

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Gdolinia doped ZrO2 and CeO2 multi-layer films were deposited on α-Al2O3 (0001) using oxygen-plasma-assisted molecular-beam epitaxy. Oxygen vacancies and Gd dopant distributions were investigated in these multi-layer films using X-ray diffraction (XRD), conventional and high-resolution transmission electron microscopy (HRTEM), annular dark-field imaging in scanning transmission electron microscopy (STEM), X-ray energy dispersive spectroscopy (EDS) elemental mapping and X-ray photoelectron spectroscopy (XPS) depth profiling. EDS and XPS depth profiling reveal that the Gd concentration in the ZrO2 layer is lower than that in the CeO2 layer. As a result, a higher oxygen vacancy concentration exists in the CeO2 layers compared to that in the ZrO2 layers. In addition, Gd is found to segregate only at the interfaces formed during the deposition of CeO2 layers on ZrO2 layers. On the other hand, the interfaces formed during the deposition of ZrO2 layers on CeO2 layers did not show any Gd segregation. The Gd segregation behavior at every other interface is believed to be associated with the low solubility of Gd in ZrO2.

Original languageEnglish
Pages (from-to)1299-1306
Number of pages8
JournalSolid State Ionics
Volume177
Issue number15-16
DOIs
Publication statusPublished - 15 Jun 2006
Externally publishedYes

Fingerprint

Depth profiling
Gadolinium
Multilayer films
Oxygen vacancies
gadolinium
X ray photoelectron spectroscopy
Doping (additives)
oxygen
High resolution transmission electron microscopy
Molecular beam epitaxy
Energy dispersive spectroscopy
Solubility
Oxygen
Transmission electron microscopy
Plasmas
Imaging techniques
X ray diffraction
Scanning electron microscopy
x rays
photoelectron spectroscopy

Keywords

  • Defect distribution
  • Gd-doped ZrO/CeO
  • HRTEM
  • Nano scale film

ASJC Scopus subject areas

  • Electrochemistry
  • Physical and Theoretical Chemistry
  • Energy Engineering and Power Technology
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Wang, C. M., Engelhard, M. H., Azad, S., Saraf, L. V., McCready, D. E., Shutthanandan, V., ... Williams, D. B. (2006). Distribution of oxygen vacancies and gadolinium dopants in ZrO2-CeO2 multi-layer films grown on α-Al2O3. Solid State Ionics, 177(15-16), 1299-1306. https://doi.org/10.1016/j.ssi.2006.05.036

Distribution of oxygen vacancies and gadolinium dopants in ZrO2-CeO2 multi-layer films grown on α-Al2O3. / Wang, C. M.; Engelhard, M. H.; Azad, S.; Saraf, L. V.; McCready, D. E.; Shutthanandan, V.; Yu, Z. Q.; Thevuthasan, S.; Watanabe, M.; Williams, D. B.

In: Solid State Ionics, Vol. 177, No. 15-16, 15.06.2006, p. 1299-1306.

Research output: Contribution to journalArticle

Wang, CM, Engelhard, MH, Azad, S, Saraf, LV, McCready, DE, Shutthanandan, V, Yu, ZQ, Thevuthasan, S, Watanabe, M & Williams, DB 2006, 'Distribution of oxygen vacancies and gadolinium dopants in ZrO2-CeO2 multi-layer films grown on α-Al2O3', Solid State Ionics, vol. 177, no. 15-16, pp. 1299-1306. https://doi.org/10.1016/j.ssi.2006.05.036
Wang CM, Engelhard MH, Azad S, Saraf LV, McCready DE, Shutthanandan V et al. Distribution of oxygen vacancies and gadolinium dopants in ZrO2-CeO2 multi-layer films grown on α-Al2O3. Solid State Ionics. 2006 Jun 15;177(15-16):1299-1306. https://doi.org/10.1016/j.ssi.2006.05.036
Wang, C. M. ; Engelhard, M. H. ; Azad, S. ; Saraf, L. V. ; McCready, D. E. ; Shutthanandan, V. ; Yu, Z. Q. ; Thevuthasan, S. ; Watanabe, M. ; Williams, D. B. / Distribution of oxygen vacancies and gadolinium dopants in ZrO2-CeO2 multi-layer films grown on α-Al2O3. In: Solid State Ionics. 2006 ; Vol. 177, No. 15-16. pp. 1299-1306.
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AU - McCready, D. E.

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