Displacement energy measurements for ion-irradiated 6H-SiC

W. Jiang, W. J. Weber, S. Thevuthasan, D. E. McCready

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23 Citations (Scopus)


Single crystal 6H-SiC wafers were separately irradiated at 180 or 190 K with energetic He+, C+ and Si+ ion beams to doses ranging from 0.008 to 0.42 dpa, with corresponding damage levels ranging from isolated point defects to complete amorphization. The accumulation of disorder on the Si sublattice has been followed using in-situ RBS measurements along the 〈0001〉-axial channeling direction. In conjunction with SRIM-97 simulations and the Kinchin-Pease approximation, the average displacement energy for the Si sublattice at each dose has been estimated from the damage profile and integrated disorder concentration. At low defect concentrations, these energies approach the threshold displacement energy for perfect crystals.

Original languageEnglish
Pages (from-to)557-561
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-4
Publication statusPublished - 1999
Externally publishedYes



  • 6H-SiC
  • Displacement energy
  • Ion irradiation
  • RBS/Channeling

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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