Direct synthesis of ZnO nanowires on nanopatterned surface by magnetron sputtering

Abdel Aziz El Mel, Marie Buffière, Florian Massuyeau, Eric Gautron, Wei Xu, Chang Hwan Choi, Jany Wéry, Eric Faulques, Nicolas Barreau, Pierre Yves Tessier

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3 Citations (Scopus)

Abstract

ZnO nanowire arrays parallel to the substrate are directly deposited by magnetron sputtering on the top of nanometric silicon line patterns prepared as a template. This method of synthesis is very simple and avoids the complicated steps of ZnO lithography. The nanoline template patterns are created by laser interference lithography combined with deep reactive ion etching. The assembly and the alignment of the nanowires after the deposition process are studied by scanning electron microscopy (SEM). The dimensions of the nanowires are regulated by those of the nanoline template patterns. The nanowires of 150nm in width, 90nm in height, 20mm in length are fabricated especially for the study of their microstructure and photoluminescence effects. The microstructure is explored by X-ray diffraction (XRD) and high-resolution (HR) transmission electron microscopy (TEM). The nanowires show well-crystallized ZnO nanograins in the hexagonal würtzite structure with a (002) preferential orientation on the (100) silicon surface. The nanowires exhibit a typical photoluminescence spectrum of ZnO.

Original languageEnglish
Pages (from-to)337-341
Number of pages5
JournalChemical Vapor Deposition
Volume17
Issue number10-12
DOIs
Publication statusPublished - 1 Dec 2011

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Keywords

  • Lithography
  • Nanowires
  • Photoluminescence
  • Sputtering
  • ZnO

ASJC Scopus subject areas

  • Chemistry(all)
  • Surfaces and Interfaces
  • Process Chemistry and Technology

Cite this

El Mel, A. A., Buffière, M., Massuyeau, F., Gautron, E., Xu, W., Choi, C. H., Wéry, J., Faulques, E., Barreau, N., & Tessier, P. Y. (2011). Direct synthesis of ZnO nanowires on nanopatterned surface by magnetron sputtering. Chemical Vapor Deposition, 17(10-12), 337-341. https://doi.org/10.1002/cvde.201106920