Direct phonon excitation in semiconductors by ultrashort intense THz radiation

J. M. Manceau, P. A. Loukakos, Stylianos Tzortzakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultrashort intense THz radiation generated through laser filamentation in air is employed to directly excite the lattice of AlGaAs semi-insulating crystals. Incoherent as well as coherent phonons are shown to be excited in this way.

Original languageEnglish
Title of host publication2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Publication statusPublished - 2009
Externally publishedYes
Event2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States
Duration: 2 Jun 20094 Jun 2009

Other

Other2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
CountryUnited States
CityBaltimore, MD
Period2/6/094/6/09

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Manceau, J. M., Loukakos, P. A., & Tzortzakis, S. (2009). Direct phonon excitation in semiconductors by ultrashort intense THz radiation. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 [5225658]