Direct observation of atomic disordering at the SrTiO3/Si interface due to oxygen diffusion

V. Shutthanandan, S. Thevuthasan, Y. Liang, E. M. Adams, Z. Yu, R. Droopad

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Abstract

The stability of epitaxially grown single crystal SrTiO3(001) thin films on Si(100) substrates was studied as a function of temperature under vacuum and oxygen-rich environments using Rutherford backscattering spectrometry in channeling geometry, nuclear reaction analysis, and x-ray photoelectron spectroscopy. During vacuum annealing, it was found that interfacial silica formed due to diffusion of oxygen from the film to Si. This was further accompanied by the atomic disordering of Sr, Ti, and O sublattices in the film due to reduction reactions. Although the interfacial degradation process is similar during heating in oxygen environment, no disordering of the film was observed.

Original languageEnglish
Pages (from-to)1803-1805
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number10
DOIs
Publication statusPublished - 11 Mar 2002
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Shutthanandan, V., Thevuthasan, S., Liang, Y., Adams, E. M., Yu, Z., & Droopad, R. (2002). Direct observation of atomic disordering at the SrTiO3/Si interface due to oxygen diffusion. Applied Physics Letters, 80(10), 1803-1805. https://doi.org/10.1063/1.1456261