TY - GEN
T1 - Device level vacuum packaged micromachined infrared detectors on flexible substrates
AU - Mahmood, Aamer
AU - Butler, Donald P.
AU - Çelik-Butler, Zeynep
PY - 2005/12/1
Y1 - 2005/12/1
N2 - This paper presents progress made in making device-level vacuum-packaged microbolometers as infrared detectors on flexible substrates. Polyimide PI5878G serves as the flexible substrate and semiconducting Yttrium Barium Copper Oxide (YBCO) is used as the bolometeric material. Finite element analysis is used to design a vacuum cavity housing a microbolometer. Suitable materials are selected for the microcavity fabrication based on results of the computer simulations. During fabrication, sacrificial polyimide around the detector facilitates the formation of a vacuum microcavity with an optical window. Micromachining is carried out through trenches in the microcavity wall. After isolating the microbolometer from the ambient, the trenches are sealed shut by sputtering in vacuum. The fabricated devices are characterized for responsivity and detectivity. At a bias voltage of 10 V, 40×40nm2 devices exhibited a current responsivity of 6.13×10-5 A/W to a broad-band infrared radiation modulated at 5 Hz. A maximum detectivity of 1.76×105cm-Hz1/2/W was measured. A relatively low thermal conductance of 3.36×10-6 W/K was measured implying good thermal isolation of the bolometers and therefore an intact vacuum cavity.
AB - This paper presents progress made in making device-level vacuum-packaged microbolometers as infrared detectors on flexible substrates. Polyimide PI5878G serves as the flexible substrate and semiconducting Yttrium Barium Copper Oxide (YBCO) is used as the bolometeric material. Finite element analysis is used to design a vacuum cavity housing a microbolometer. Suitable materials are selected for the microcavity fabrication based on results of the computer simulations. During fabrication, sacrificial polyimide around the detector facilitates the formation of a vacuum microcavity with an optical window. Micromachining is carried out through trenches in the microcavity wall. After isolating the microbolometer from the ambient, the trenches are sealed shut by sputtering in vacuum. The fabricated devices are characterized for responsivity and detectivity. At a bias voltage of 10 V, 40×40nm2 devices exhibited a current responsivity of 6.13×10-5 A/W to a broad-band infrared radiation modulated at 5 Hz. A maximum detectivity of 1.76×105cm-Hz1/2/W was measured. A relatively low thermal conductance of 3.36×10-6 W/K was measured implying good thermal isolation of the bolometers and therefore an intact vacuum cavity.
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U2 - 10.1109/ICSENS.2005.1597909
DO - 10.1109/ICSENS.2005.1597909
M3 - Conference contribution
AN - SCOPUS:33847277550
SN - 0780390563
SN - 9780780390560
T3 - Proceedings of IEEE Sensors
SP - 1153
EP - 1156
BT - Proceedings of the Fourth IEEE Conference on Sensors 2005
T2 - Fourth IEEE Conference on Sensors 2005
Y2 - 31 October 2005 through 3 November 2005
ER -