Development of co-evaporated In2S3 buffer layer for Cu2ZnSnSe4 thin film solar cells

Marie Buffiere, Nicolas Barreau, Guy Brammertz, Sylvester Sahayaraj, Marc Meuris, Jef Poortmans

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this work, we focus on the replacement of the commonly used but toxic Cd-based buffer layer by In2S3 thin films deposited by co-evaporation for application in Cu2ZnSnSe4 (CZTSe) solar cells. The impact of the deposition conditions of the buffer layer on the electrical behavior of CZTSe/In2S3 devices is first investigated. The best solar cell efficiencies were obtained for relatively thick In2S3 buffer layers (∼100 nm) deposited at low temperature (<100 °C). It is also observed that low [Cu]/([Zn]+[Sn]) ratio (CZT∼0.75) in the kesterite absorber leads to high efficiency for In-based buffered CZTSe solar cells, while the effect of the CZT ratio on CZTSe/CdS solar cell performances is not so clear. A conversion efficiency of 5.7 % on CZTSe/In2S3 thin film solar cell is achieved.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
Publication statusPublished - 14 Dec 2015
Externally publishedYes
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period14/6/1519/6/15

Fingerprint

Buffer layers
Solar cells
Poisons
Conversion efficiency
Evaporation
Thin films
Thin film solar cells
Temperature

Keywords

  • Cd-free buffer layer
  • kesterite
  • physical process

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Buffiere, M., Barreau, N., Brammertz, G., Sahayaraj, S., Meuris, M., & Poortmans, J. (2015). Development of co-evaporated In2S3 buffer layer for Cu2ZnSnSe4 thin film solar cells. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355906] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355906

Development of co-evaporated In2S3 buffer layer for Cu2ZnSnSe4 thin film solar cells. / Buffiere, Marie; Barreau, Nicolas; Brammertz, Guy; Sahayaraj, Sylvester; Meuris, Marc; Poortmans, Jef.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355906.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Buffiere, M, Barreau, N, Brammertz, G, Sahayaraj, S, Meuris, M & Poortmans, J 2015, Development of co-evaporated In2S3 buffer layer for Cu2ZnSnSe4 thin film solar cells. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355906, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/6/15. https://doi.org/10.1109/PVSC.2015.7355906
Buffiere M, Barreau N, Brammertz G, Sahayaraj S, Meuris M, Poortmans J. Development of co-evaporated In2S3 buffer layer for Cu2ZnSnSe4 thin film solar cells. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7355906 https://doi.org/10.1109/PVSC.2015.7355906
Buffiere, Marie ; Barreau, Nicolas ; Brammertz, Guy ; Sahayaraj, Sylvester ; Meuris, Marc ; Poortmans, Jef. / Development of co-evaporated In2S3 buffer layer for Cu2ZnSnSe4 thin film solar cells. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
@inproceedings{d152f134537440bfa2b59ebba43ea323,
title = "Development of co-evaporated In2S3 buffer layer for Cu2ZnSnSe4 thin film solar cells",
abstract = "In this work, we focus on the replacement of the commonly used but toxic Cd-based buffer layer by In2S3 thin films deposited by co-evaporation for application in Cu2ZnSnSe4 (CZTSe) solar cells. The impact of the deposition conditions of the buffer layer on the electrical behavior of CZTSe/In2S3 devices is first investigated. The best solar cell efficiencies were obtained for relatively thick In2S3 buffer layers (∼100 nm) deposited at low temperature (<100 °C). It is also observed that low [Cu]/([Zn]+[Sn]) ratio (CZT∼0.75) in the kesterite absorber leads to high efficiency for In-based buffered CZTSe solar cells, while the effect of the CZT ratio on CZTSe/CdS solar cell performances is not so clear. A conversion efficiency of 5.7 {\%} on CZTSe/In2S3 thin film solar cell is achieved.",
keywords = "Cd-free buffer layer, kesterite, physical process",
author = "Marie Buffiere and Nicolas Barreau and Guy Brammertz and Sylvester Sahayaraj and Marc Meuris and Jef Poortmans",
year = "2015",
month = "12",
day = "14",
doi = "10.1109/PVSC.2015.7355906",
language = "English",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Development of co-evaporated In2S3 buffer layer for Cu2ZnSnSe4 thin film solar cells

AU - Buffiere, Marie

AU - Barreau, Nicolas

AU - Brammertz, Guy

AU - Sahayaraj, Sylvester

AU - Meuris, Marc

AU - Poortmans, Jef

PY - 2015/12/14

Y1 - 2015/12/14

N2 - In this work, we focus on the replacement of the commonly used but toxic Cd-based buffer layer by In2S3 thin films deposited by co-evaporation for application in Cu2ZnSnSe4 (CZTSe) solar cells. The impact of the deposition conditions of the buffer layer on the electrical behavior of CZTSe/In2S3 devices is first investigated. The best solar cell efficiencies were obtained for relatively thick In2S3 buffer layers (∼100 nm) deposited at low temperature (<100 °C). It is also observed that low [Cu]/([Zn]+[Sn]) ratio (CZT∼0.75) in the kesterite absorber leads to high efficiency for In-based buffered CZTSe solar cells, while the effect of the CZT ratio on CZTSe/CdS solar cell performances is not so clear. A conversion efficiency of 5.7 % on CZTSe/In2S3 thin film solar cell is achieved.

AB - In this work, we focus on the replacement of the commonly used but toxic Cd-based buffer layer by In2S3 thin films deposited by co-evaporation for application in Cu2ZnSnSe4 (CZTSe) solar cells. The impact of the deposition conditions of the buffer layer on the electrical behavior of CZTSe/In2S3 devices is first investigated. The best solar cell efficiencies were obtained for relatively thick In2S3 buffer layers (∼100 nm) deposited at low temperature (<100 °C). It is also observed that low [Cu]/([Zn]+[Sn]) ratio (CZT∼0.75) in the kesterite absorber leads to high efficiency for In-based buffered CZTSe solar cells, while the effect of the CZT ratio on CZTSe/CdS solar cell performances is not so clear. A conversion efficiency of 5.7 % on CZTSe/In2S3 thin film solar cell is achieved.

KW - Cd-free buffer layer

KW - kesterite

KW - physical process

UR - http://www.scopus.com/inward/record.url?scp=84961575207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961575207&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2015.7355906

DO - 10.1109/PVSC.2015.7355906

M3 - Conference contribution

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -