Development of chemically assisted dry etching methods for magnetic device structures

K. B. Jung, H. Cho, K. P. Lee, J. Marburger, F. Sharifi, R. K. Singh, D. Kumar, K. H. Dahmen, S. J. Pearton

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

There is a strong need for advanced pattern transfer methods for magnetic devices such as magnetic random access memories, sensors for avionics and mine detection, and read/write heads for high density information storage. As the critical dimensions in these devices are decreased, the use of ion milling for pattern transfer presents major obstacles, including sidewall redeposition (which degrades magnetic performance) and poor mask selectivity. Most magnetic materials do not form volatile etch products in conventional reactive ion etching. We have recently found that high density plasmas provide efficient ion-assisted desorption of metal chloride etch products, provided that the etch production formation and removal are balanced by correct choice of ion/neutral ratio. We have completed the survey of plasma chemistries for etching of giant magnetoresistance (GMR) (NiFe, NiMnSb) and collossal magnetoresistance (CMR) (LaCaMnO3,LaSrMnO3,PrBaCaMnO3) materials. The optimum choices are Cl2/Ar for CMR oxides, SF6/Ar for NiMnSb Heusler alloys and either Cl2/Ar or CO/NH3 for GMR multilayers. We have also addressed the issue of postetch cleaning for corrosion prevention, by combining simple water rinsing with in situ plasma cleans involving H2, O2, or F2. Under optimized conditions, there is excellent long-term stability of both the mechanical and magnetic properties of the multilayer structures.

Original languageEnglish
Pages (from-to)3186-3189
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume17
Issue number6
Publication statusPublished - 1 Dec 1999
Externally publishedYes

Fingerprint

Magnetic devices
Dry etching
Giant magnetoresistance
etching
Magnetoresistance
Ions
Multilayers
Corrosion prevention
Plasmas
Data storage equipment
ions
corrosion prevention
Plasma density
Magnetic materials
Reactive ion etching
Avionics
plasma chemistry
avionics
Masks
Etching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Jung, K. B., Cho, H., Lee, K. P., Marburger, J., Sharifi, F., Singh, R. K., ... Pearton, S. J. (1999). Development of chemically assisted dry etching methods for magnetic device structures. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 17(6), 3186-3189.

Development of chemically assisted dry etching methods for magnetic device structures. / Jung, K. B.; Cho, H.; Lee, K. P.; Marburger, J.; Sharifi, F.; Singh, R. K.; Kumar, D.; Dahmen, K. H.; Pearton, S. J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 17, No. 6, 01.12.1999, p. 3186-3189.

Research output: Contribution to journalArticle

Jung, KB, Cho, H, Lee, KP, Marburger, J, Sharifi, F, Singh, RK, Kumar, D, Dahmen, KH & Pearton, SJ 1999, 'Development of chemically assisted dry etching methods for magnetic device structures', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 17, no. 6, pp. 3186-3189.
Jung, K. B. ; Cho, H. ; Lee, K. P. ; Marburger, J. ; Sharifi, F. ; Singh, R. K. ; Kumar, D. ; Dahmen, K. H. ; Pearton, S. J. / Development of chemically assisted dry etching methods for magnetic device structures. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1999 ; Vol. 17, No. 6. pp. 3186-3189.
@article{4d06f695daab424b8275ccce12edd438,
title = "Development of chemically assisted dry etching methods for magnetic device structures",
abstract = "There is a strong need for advanced pattern transfer methods for magnetic devices such as magnetic random access memories, sensors for avionics and mine detection, and read/write heads for high density information storage. As the critical dimensions in these devices are decreased, the use of ion milling for pattern transfer presents major obstacles, including sidewall redeposition (which degrades magnetic performance) and poor mask selectivity. Most magnetic materials do not form volatile etch products in conventional reactive ion etching. We have recently found that high density plasmas provide efficient ion-assisted desorption of metal chloride etch products, provided that the etch production formation and removal are balanced by correct choice of ion/neutral ratio. We have completed the survey of plasma chemistries for etching of giant magnetoresistance (GMR) (NiFe, NiMnSb) and collossal magnetoresistance (CMR) (LaCaMnO3,LaSrMnO3,PrBaCaMnO3) materials. The optimum choices are Cl2/Ar for CMR oxides, SF6/Ar for NiMnSb Heusler alloys and either Cl2/Ar or CO/NH3 for GMR multilayers. We have also addressed the issue of postetch cleaning for corrosion prevention, by combining simple water rinsing with in situ plasma cleans involving H2, O2, or F2. Under optimized conditions, there is excellent long-term stability of both the mechanical and magnetic properties of the multilayer structures.",
author = "Jung, {K. B.} and H. Cho and Lee, {K. P.} and J. Marburger and F. Sharifi and Singh, {R. K.} and D. Kumar and Dahmen, {K. H.} and Pearton, {S. J.}",
year = "1999",
month = "12",
day = "1",
language = "English",
volume = "17",
pages = "3186--3189",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Development of chemically assisted dry etching methods for magnetic device structures

AU - Jung, K. B.

AU - Cho, H.

AU - Lee, K. P.

AU - Marburger, J.

AU - Sharifi, F.

AU - Singh, R. K.

AU - Kumar, D.

AU - Dahmen, K. H.

AU - Pearton, S. J.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - There is a strong need for advanced pattern transfer methods for magnetic devices such as magnetic random access memories, sensors for avionics and mine detection, and read/write heads for high density information storage. As the critical dimensions in these devices are decreased, the use of ion milling for pattern transfer presents major obstacles, including sidewall redeposition (which degrades magnetic performance) and poor mask selectivity. Most magnetic materials do not form volatile etch products in conventional reactive ion etching. We have recently found that high density plasmas provide efficient ion-assisted desorption of metal chloride etch products, provided that the etch production formation and removal are balanced by correct choice of ion/neutral ratio. We have completed the survey of plasma chemistries for etching of giant magnetoresistance (GMR) (NiFe, NiMnSb) and collossal magnetoresistance (CMR) (LaCaMnO3,LaSrMnO3,PrBaCaMnO3) materials. The optimum choices are Cl2/Ar for CMR oxides, SF6/Ar for NiMnSb Heusler alloys and either Cl2/Ar or CO/NH3 for GMR multilayers. We have also addressed the issue of postetch cleaning for corrosion prevention, by combining simple water rinsing with in situ plasma cleans involving H2, O2, or F2. Under optimized conditions, there is excellent long-term stability of both the mechanical and magnetic properties of the multilayer structures.

AB - There is a strong need for advanced pattern transfer methods for magnetic devices such as magnetic random access memories, sensors for avionics and mine detection, and read/write heads for high density information storage. As the critical dimensions in these devices are decreased, the use of ion milling for pattern transfer presents major obstacles, including sidewall redeposition (which degrades magnetic performance) and poor mask selectivity. Most magnetic materials do not form volatile etch products in conventional reactive ion etching. We have recently found that high density plasmas provide efficient ion-assisted desorption of metal chloride etch products, provided that the etch production formation and removal are balanced by correct choice of ion/neutral ratio. We have completed the survey of plasma chemistries for etching of giant magnetoresistance (GMR) (NiFe, NiMnSb) and collossal magnetoresistance (CMR) (LaCaMnO3,LaSrMnO3,PrBaCaMnO3) materials. The optimum choices are Cl2/Ar for CMR oxides, SF6/Ar for NiMnSb Heusler alloys and either Cl2/Ar or CO/NH3 for GMR multilayers. We have also addressed the issue of postetch cleaning for corrosion prevention, by combining simple water rinsing with in situ plasma cleans involving H2, O2, or F2. Under optimized conditions, there is excellent long-term stability of both the mechanical and magnetic properties of the multilayer structures.

UR - http://www.scopus.com/inward/record.url?scp=0033273251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033273251&partnerID=8YFLogxK

M3 - Article

VL - 17

SP - 3186

EP - 3189

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 6

ER -