Deuterium channeling study of disorder in Al22+-implanted 6H-SiC

W. Jiang, W. J. Weber, S. Thevuthasan, V. Shutthanandan

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Single crystal 6H-SiC wafers have been irradiated 60° off normal at 150, 190, 250 and 295 K using 1.1 MeV Al22+ ions over fluences from 0.15 to 2.85 ions/nm2. The accumulation and recovery of disorder on both the Si and C sublattices have been measured simultaneously using in situ 0.94 MeV D+ Rutherford backscattering 28Si(d,d)28Si and nuclear reaction 12C(d,p)13C along the 〈0 0 0 1〉-axial channeling direction. The behavior of disorder accumulation and recovery on the Si and C sublattices is similar. The data suggest that a dynamic recovery stage occurs between irradiation temperatures of 190 and 250 K. At intermediate doses, isochronal annealing (20 min) results show that significant thermal recovery occurs between 420 and 720 K. Complete recovery is not observed by thermal annealing up to the highest temperature (870 K) used in this study.

Original languageEnglish
Pages (from-to)636-640
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume190
Issue number1-4
DOIs
Publication statusPublished - May 2002
Externally publishedYes

Fingerprint

Deuterium
deuterium
recovery
disorders
Recovery
sublattices
Annealing
Ions
annealing
Nuclear reactions
Rutherford backscattering spectroscopy
nuclear reactions
backscattering
fluence
ions
Irradiation
Single crystals
wafers
dosage
Temperature

Keywords

  • 6H-SiC
  • Disorder accumulation and recovery
  • Ion-beam irradiation
  • RBS and NRA channeling analyses

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Deuterium channeling study of disorder in Al22+-implanted 6H-SiC. / Jiang, W.; Weber, W. J.; Thevuthasan, S.; Shutthanandan, V.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 190, No. 1-4, 05.2002, p. 636-640.

Research output: Contribution to journalArticle

@article{8e48295aa3714603ad9ad3c00852fcfc,
title = "Deuterium channeling study of disorder in Al22+-implanted 6H-SiC",
abstract = "Single crystal 6H-SiC wafers have been irradiated 60° off normal at 150, 190, 250 and 295 K using 1.1 MeV Al22+ ions over fluences from 0.15 to 2.85 ions/nm2. The accumulation and recovery of disorder on both the Si and C sublattices have been measured simultaneously using in situ 0.94 MeV D+ Rutherford backscattering 28Si(d,d)28Si and nuclear reaction 12C(d,p)13C along the 〈0 0 0 1〉-axial channeling direction. The behavior of disorder accumulation and recovery on the Si and C sublattices is similar. The data suggest that a dynamic recovery stage occurs between irradiation temperatures of 190 and 250 K. At intermediate doses, isochronal annealing (20 min) results show that significant thermal recovery occurs between 420 and 720 K. Complete recovery is not observed by thermal annealing up to the highest temperature (870 K) used in this study.",
keywords = "6H-SiC, Disorder accumulation and recovery, Ion-beam irradiation, RBS and NRA channeling analyses",
author = "W. Jiang and Weber, {W. J.} and S. Thevuthasan and V. Shutthanandan",
year = "2002",
month = "5",
doi = "10.1016/S0168-583X(01)01194-6",
language = "English",
volume = "190",
pages = "636--640",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Deuterium channeling study of disorder in Al22+-implanted 6H-SiC

AU - Jiang, W.

AU - Weber, W. J.

AU - Thevuthasan, S.

AU - Shutthanandan, V.

PY - 2002/5

Y1 - 2002/5

N2 - Single crystal 6H-SiC wafers have been irradiated 60° off normal at 150, 190, 250 and 295 K using 1.1 MeV Al22+ ions over fluences from 0.15 to 2.85 ions/nm2. The accumulation and recovery of disorder on both the Si and C sublattices have been measured simultaneously using in situ 0.94 MeV D+ Rutherford backscattering 28Si(d,d)28Si and nuclear reaction 12C(d,p)13C along the 〈0 0 0 1〉-axial channeling direction. The behavior of disorder accumulation and recovery on the Si and C sublattices is similar. The data suggest that a dynamic recovery stage occurs between irradiation temperatures of 190 and 250 K. At intermediate doses, isochronal annealing (20 min) results show that significant thermal recovery occurs between 420 and 720 K. Complete recovery is not observed by thermal annealing up to the highest temperature (870 K) used in this study.

AB - Single crystal 6H-SiC wafers have been irradiated 60° off normal at 150, 190, 250 and 295 K using 1.1 MeV Al22+ ions over fluences from 0.15 to 2.85 ions/nm2. The accumulation and recovery of disorder on both the Si and C sublattices have been measured simultaneously using in situ 0.94 MeV D+ Rutherford backscattering 28Si(d,d)28Si and nuclear reaction 12C(d,p)13C along the 〈0 0 0 1〉-axial channeling direction. The behavior of disorder accumulation and recovery on the Si and C sublattices is similar. The data suggest that a dynamic recovery stage occurs between irradiation temperatures of 190 and 250 K. At intermediate doses, isochronal annealing (20 min) results show that significant thermal recovery occurs between 420 and 720 K. Complete recovery is not observed by thermal annealing up to the highest temperature (870 K) used in this study.

KW - 6H-SiC

KW - Disorder accumulation and recovery

KW - Ion-beam irradiation

KW - RBS and NRA channeling analyses

UR - http://www.scopus.com/inward/record.url?scp=0036570191&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036570191&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(01)01194-6

DO - 10.1016/S0168-583X(01)01194-6

M3 - Article

VL - 190

SP - 636

EP - 640

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -