Deuterium ion channeling is applied to study accumulated disorder on Si and C sublattices in 6H-SiC crystals irradiated with 50 keV He+ ions at 100 and 300 K. The relative disorder on both lattices follows sigmoidal dependence on dose. Carbon disorder is higher at low doses, suggesting a smaller C displacement energy. Above an ion fluence of 1.0 × 1016 He+/cm2, more C defects can be recovered during irradiation, indicating a lower activation energy for C migration and recombination. Isochronal annealing data show that the recovery behavior on the Si and C sublattices is similar. Annealing of a buried amorphous SiC layer, produced at 100 K (2.5 × 1016 He+/cm2), exhibits an epitaxial growth rate of approx. 0.154 nm/K in the temperature range 370-870 K.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - Mar 2000|
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces