Deuterium channeling analysis for He+-implanted 6H-SiC

W. Jiang, S. Thevuthasan, W. J. Weber, R. Grötzschel

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Deuterium ion channeling is applied to study accumulated disorder on Si and C sublattices in 6H-SiC crystals irradiated with 50 keV He+ ions at 100 and 300 K. The relative disorder on both lattices follows sigmoidal dependence on dose. Carbon disorder is higher at low doses, suggesting a smaller C displacement energy. Above an ion fluence of 1.0 × 1016 He+/cm2, more C defects can be recovered during irradiation, indicating a lower activation energy for C migration and recombination. Isochronal annealing data show that the recovery behavior on the Si and C sublattices is similar. Annealing of a buried amorphous SiC layer, produced at 100 K (2.5 × 1016 He+/cm2), exhibits an epitaxial growth rate of approx. 0.154 nm/K in the temperature range 370-870 K.

Original languageEnglish
Pages (from-to)501-504
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume161
DOIs
Publication statusPublished - Mar 2000
Externally publishedYes

Fingerprint

Deuterium
deuterium
disorders
Ions
sublattices
Annealing
dosage
ions
annealing
Epitaxial growth
fluence
Carbon
Activation energy
recovery
Irradiation
activation energy
Recovery
Defects
Crystals
irradiation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Deuterium channeling analysis for He+-implanted 6H-SiC. / Jiang, W.; Thevuthasan, S.; Weber, W. J.; Grötzschel, R.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 161, 03.2000, p. 501-504.

Research output: Contribution to journalArticle

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