Deuterium channeling analysis for He+-implanted 6H-SiC

W. Jiang, S. Thevuthasan, W. J. Weber, R. Grötzschel

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Deuterium ion channeling is applied to study accumulated disorder on Si and C sublattices in 6H-SiC crystals irradiated with 50 keV He+ ions at 100 and 300 K. The relative disorder on both lattices follows sigmoidal dependence on dose. Carbon disorder is higher at low doses, suggesting a smaller C displacement energy. Above an ion fluence of 1.0 × 1016 He+/cm2, more C defects can be recovered during irradiation, indicating a lower activation energy for C migration and recombination. Isochronal annealing data show that the recovery behavior on the Si and C sublattices is similar. Annealing of a buried amorphous SiC layer, produced at 100 K (2.5 × 1016 He+/cm2), exhibits an epitaxial growth rate of approx. 0.154 nm/K in the temperature range 370-870 K.

Original languageEnglish
Pages (from-to)501-504
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - Mar 2000
Externally publishedYes


ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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