Design of SiC-based single-phase quasi-Z-source inverter

Yushan Liu, Haitham Abu-Rub, Yichang Wu, Khalid Ahamed Ghazi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon Carbide (SiC)-based single-phase quasi-Z-source inverter (qZSI) is proposed in this paper to provide a high power density and cost benefit solution for the Photovoltaic (PV) power application. Bulky qZS impedance network is unavoidable in conventional single-phase qZSI even with SiC power devices, due to handling double-line-frequency (2ω) ripple. The design of SiC-based single-phase qZSI is addressed in this paper through power loss evaluation and impedance parameters determination with active power filter's phase leg for compensting the 2ω ripple. All passive components are small in size and weight under the high switching frequency of SiC devices. Power devices' losses of SiC and Si-based inverter are compared. Simulation results at the designed parameters are introduced to validate the proposed solution.

Original languageEnglish
Title of host publicationProceedings - 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-7
Number of pages7
ISBN (Electronic)9781538625088
DOIs
Publication statusPublished - 4 Jun 2018
Event12th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018 - Doha, Qatar
Duration: 10 Apr 201812 Apr 2018

Other

Other12th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018
CountryQatar
CityDoha
Period10/4/1812/4/18

Fingerprint

Silicon carbide
Switching frequency
Costs

Keywords

  • Power density
  • Quasi-Z-source inverter
  • Silicon carbide
  • Single-phase inverter
  • Switching frequency

ASJC Scopus subject areas

  • Hardware and Architecture
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Liu, Y., Abu-Rub, H., Wu, Y., & Ghazi, K. A. (2018). Design of SiC-based single-phase quasi-Z-source inverter. In Proceedings - 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018 (pp. 1-7). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CPE.2018.8372555

Design of SiC-based single-phase quasi-Z-source inverter. / Liu, Yushan; Abu-Rub, Haitham; Wu, Yichang; Ghazi, Khalid Ahamed.

Proceedings - 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-7.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, Y, Abu-Rub, H, Wu, Y & Ghazi, KA 2018, Design of SiC-based single-phase quasi-Z-source inverter. in Proceedings - 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018. Institute of Electrical and Electronics Engineers Inc., pp. 1-7, 12th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018, Doha, Qatar, 10/4/18. https://doi.org/10.1109/CPE.2018.8372555
Liu Y, Abu-Rub H, Wu Y, Ghazi KA. Design of SiC-based single-phase quasi-Z-source inverter. In Proceedings - 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-7 https://doi.org/10.1109/CPE.2018.8372555
Liu, Yushan ; Abu-Rub, Haitham ; Wu, Yichang ; Ghazi, Khalid Ahamed. / Design of SiC-based single-phase quasi-Z-source inverter. Proceedings - 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-7
@inproceedings{c6ae3bb2b82244b59712b6832c8ce40f,
title = "Design of SiC-based single-phase quasi-Z-source inverter",
abstract = "Silicon Carbide (SiC)-based single-phase quasi-Z-source inverter (qZSI) is proposed in this paper to provide a high power density and cost benefit solution for the Photovoltaic (PV) power application. Bulky qZS impedance network is unavoidable in conventional single-phase qZSI even with SiC power devices, due to handling double-line-frequency (2ω) ripple. The design of SiC-based single-phase qZSI is addressed in this paper through power loss evaluation and impedance parameters determination with active power filter's phase leg for compensting the 2ω ripple. All passive components are small in size and weight under the high switching frequency of SiC devices. Power devices' losses of SiC and Si-based inverter are compared. Simulation results at the designed parameters are introduced to validate the proposed solution.",
keywords = "Power density, Quasi-Z-source inverter, Silicon carbide, Single-phase inverter, Switching frequency",
author = "Yushan Liu and Haitham Abu-Rub and Yichang Wu and Ghazi, {Khalid Ahamed}",
year = "2018",
month = "6",
day = "4",
doi = "10.1109/CPE.2018.8372555",
language = "English",
pages = "1--7",
booktitle = "Proceedings - 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Design of SiC-based single-phase quasi-Z-source inverter

AU - Liu, Yushan

AU - Abu-Rub, Haitham

AU - Wu, Yichang

AU - Ghazi, Khalid Ahamed

PY - 2018/6/4

Y1 - 2018/6/4

N2 - Silicon Carbide (SiC)-based single-phase quasi-Z-source inverter (qZSI) is proposed in this paper to provide a high power density and cost benefit solution for the Photovoltaic (PV) power application. Bulky qZS impedance network is unavoidable in conventional single-phase qZSI even with SiC power devices, due to handling double-line-frequency (2ω) ripple. The design of SiC-based single-phase qZSI is addressed in this paper through power loss evaluation and impedance parameters determination with active power filter's phase leg for compensting the 2ω ripple. All passive components are small in size and weight under the high switching frequency of SiC devices. Power devices' losses of SiC and Si-based inverter are compared. Simulation results at the designed parameters are introduced to validate the proposed solution.

AB - Silicon Carbide (SiC)-based single-phase quasi-Z-source inverter (qZSI) is proposed in this paper to provide a high power density and cost benefit solution for the Photovoltaic (PV) power application. Bulky qZS impedance network is unavoidable in conventional single-phase qZSI even with SiC power devices, due to handling double-line-frequency (2ω) ripple. The design of SiC-based single-phase qZSI is addressed in this paper through power loss evaluation and impedance parameters determination with active power filter's phase leg for compensting the 2ω ripple. All passive components are small in size and weight under the high switching frequency of SiC devices. Power devices' losses of SiC and Si-based inverter are compared. Simulation results at the designed parameters are introduced to validate the proposed solution.

KW - Power density

KW - Quasi-Z-source inverter

KW - Silicon carbide

KW - Single-phase inverter

KW - Switching frequency

UR - http://www.scopus.com/inward/record.url?scp=85048875310&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048875310&partnerID=8YFLogxK

U2 - 10.1109/CPE.2018.8372555

DO - 10.1109/CPE.2018.8372555

M3 - Conference contribution

AN - SCOPUS:85048875310

SP - 1

EP - 7

BT - Proceedings - 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -